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1.发明授权
公开(公告)号：US6017144A
公开(公告)日：2000-01-25
申请号：US736629
申请日：1996-10-24
IPC分类号： C23C14/56 , C23C16/02 , C23C16/20 , C23C16/46 , C23C16/52 , C23C16/54 , H01L21/205 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , G06F17/00 , G07F15/02
CPC分类号： C23C14/568 , C23C16/0281 , C23C16/20 , C23C16/54 , H01L21/32051 , H01L21/76843 , H01L21/76876 , H01L21/76877 , H01L21/76879 , H01L2221/1089
摘要： The present invention is to a chemical vapor deposition process for depositing a substantially planar, highly reflective layer on a substrate, and is particularly useful for filling high aspect ratio holes in the substrate with metal-containing material. The substrate is placed in a process zone, and successive seeding and oriented crystal growth stages are performed on the substrate. In the seeding stage, the substrate is heated to temperatures T.sub.s, within a first lower range of temperatures .DELTA. T.sub.s, and a seeding gas is introduced into the process zone. The seeding gas deposits a substantially continuous, non-granular, and planar seeding layer on the substrate. Thereafter, in an oriented crystal growth stage, the substrate is maintained at deposition temperatures T.sub.d, within a second higher range of temperatures .DELTA. T.sub.D, and deposition gas is introduced into the process zone. The deposition gas forms an oriented crystal growth layer on the seeding layer, the oriented crystal growth layer having a highly reflective surface that results from highly oriented, relatively large crystals that grow on the seeding layer.
摘要翻译： 本发明涉及一种用于在基片上沉积基本平面的高反射层的化学气相沉积工艺，特别适用于用含金属的材料填充衬底中的高纵横比孔。 将衬底放置在工艺区中，并在衬底上进行连续接种和取向晶体生长阶段。 在播种阶段，将衬底加热到第一较低温度范围DELTA Ts内的温度Ts，并将接种气体引入工艺区。 接种气体在衬底上沉积基本上连续的，非粒状的和平面的接种层。 此后，在取向晶体生长阶段中，将衬底保持在沉积温度Td，在第二较高温度范围DELTA TD内，并将沉积气体引入工艺区。 沉积气体在接种层上形成取向的晶体生长层，取向晶体生长层具有由在取向层上生长的高定向，相对较大的晶体产生的高反射性表面。
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