公开(公告)号：US5373377A

公开(公告)日：1994-12-13

申请号：US14162

申请日：1993-02-05

申请人： Meiko Ogawa ,  Kouhei Suzuki ,  Hiroaki Kitahara ,  Shinichi Kimura ,  Yoshikazu Ichioka

发明人： Meiko Ogawa ,  Kouhei Suzuki ,  Hiroaki Kitahara ,  Shinichi Kimura ,  Yoshikazu Ichioka

IPC分类号： G02F1/1335 ,  G02F1/1362 ,  G02F1/343

CPC分类号： G02F1/136204 ,  G02F1/133512

摘要： An active matrix type liquid crystal display device with a short-circuiting wire for mutually short-circuiting address wires and data wires through the medium of resistors made of a thin-film transistor is formed along the periphery of a display region on an insulating substrate. The short-circuiting wire is electrically connected inside a region in which the resistors made of a thin-film transistor are formed. In one embodiment, the transistors are surrounded by a portion of the shod circuiting wire. In another embodiment, they are partially surrounded by the wire with a gate electrode which is not protruding out. In another embodiment they are formed with two source and drain regions, one which has a lower breakdown voltage than the other.

摘要翻译： 在绝缘基板上的显示区域的周围形成有通过薄膜晶体管制成的电阻体的介质，通过短路线将地址线与数据线相互短路的有源矩阵型液晶显示装置。 短路线电连接在形成由薄膜晶体管构成的电阻器的区域内。 在一个实施例中，晶体管被一部分短路电线围绕。 在另一个实施例中，它们被不被突出的栅极电极部分地围绕。 在另一个实施例中，它们形成有两个源极和漏极区域，一个具有比另一个更低的击穿电压。

公开(公告)号：US5296653A

公开(公告)日：1994-03-22

申请号：US987601

申请日：1992-12-09

申请人： Toshiya Kiyota ,  Mitsushi Ikeda ,  Meiko Ogawa ,  Yoshifumi Ogawa ,  Michio Murooka

发明人： Toshiya Kiyota ,  Mitsushi Ikeda ,  Meiko Ogawa ,  Yoshifumi Ogawa ,  Michio Murooka

IPC分类号： G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G03G5/10 ,  H01B5/14 ,  H01L21/3205 ,  H01L23/52 ,  H01L27/146 ,  H01L29/78 ,  H01L29/786 ,  H01S5/042 ,  H05K1/00

CPC分类号： G03G5/104 ,  G02F1/136286 ,  G02F2001/13629 ,  H01S5/0425

摘要： A multi-layered conductor structure device has a substrate, a first conductor layer formed on the substrate, which provides an electrode or wiring, and an insulating film covering the first conductor layer and the substrate. On the insulating film, a second conductor layer is formed which comprises an indium tin oxide, and which provides an electrode or wiring. The first conductor layer is formed of an alloy of aluminum with copper, gold, boron, bismuth, cobalt, chromium, germanium, iron, molybdenum, niobium, nickel, palladium, platinum, tantalum, titanium, tungsten, and/or silver.

摘要翻译： 多层导体结构器件具有衬底，形成在衬底上的第一导体层，其提供电极或布线，以及覆盖第一导体层和衬底的绝缘膜。 在绝缘膜上形成包括氧化铟锡的第二导体层，并提供电极或布线。 第一导体层由铝与铜，金，硼，铋，钴，铬，锗，铁，钼，铌，镍，钯，铂，钽，钛，钨和/或银的合金形成。