PROBE FOR TESTING SEMICONDUCTOR DEVICES
    1.
    发明申请
    PROBE FOR TESTING SEMICONDUCTOR DEVICES 有权
    用于测试半导体器件的探针

    公开(公告)号:US20080252328A1

    公开(公告)日:2008-10-16

    申请号:US12042295

    申请日:2008-03-04

    IPC分类号: G01R1/067

    CPC分类号: G01R1/06733 G01R1/06727

    摘要: A novel probe design is presented that increases a probe tolerance to stress fractures. Specifically, what is disclosed are three features increase stress tolerance. These features include a various union angle interface edge shapes, pivot cutouts and buffers.

    摘要翻译: 提出了一种新的探针设计,增加了对应力骨折的探针耐受性。 具体来说,公开的是增加压力容忍度的三个特征。 这些特征包括各种联合角度界面边缘形状,枢轴切口和缓冲区。

    PROBE FOR TESTING SEMICONDUCTOR DEVICES
    2.
    发明申请
    PROBE FOR TESTING SEMICONDUCTOR DEVICES 有权
    用于测试半导体器件的探针

    公开(公告)号:US20120032697A1

    公开(公告)日:2012-02-09

    申请号:US12693428

    申请日:2010-01-25

    IPC分类号: G01R1/067

    CPC分类号: G01R1/06733 G01R1/06727

    摘要: A novel hybrid probe design is presented that comprises a torsion element and a bending element. These elements allow the probe to store the displacement energy as torsion or as bending. The novel hybrid probe comprises a probe base, a torsion element, a bending element, and a probe tip. The probe elastically deforms to absorb the displacement energy as the probe tip contacts the DUT contact pad. The bending element absorbs some of the displacement energy through bending. Because the torsion element and the bending element join at an angle between −90 degrees and 90 degrees, a portion of the displacement energy is transferred to the torsion element causing it to twist (torque). The torsion element can also bend to accommodate the storage of energy through torsion and bending. Also, adjusting the position of a pivot can be manipulated to alter the energy absorption characteristics of the probe. One or more additional angular elements may be added to change the energy absorption characteristics of the probe. And, the moment of inertia for the torsion and/or bending elements can by manipulated to achieve the desired probe characteristics. Other features include a various union angle interface edge shapes, pivot cutouts and buffers.

    摘要翻译: 提出了一种新颖的混合探针设计,其包括扭转元件和弯曲元件。 这些元件允许探头将位移能量存储为扭转或弯曲。 该新型混合探针包括探针基座,扭转元件,弯曲元件和探针尖端。 当探针尖端接触DUT接触垫时,探头弹性变形以吸收位移能量。 弯曲元件通过弯曲吸收一些位移能量。 由于扭转元件和弯曲元件以-90度和90度之间的角度接合,所以位移能量的一部分被传递到扭转元件,使其扭转(扭矩)。 扭转元件还可以弯曲以适应通过扭转和弯曲的能量存储。 此外,可以调节枢轴的位置以改变探头的能量吸收特性。 可以添加一个或多个附加角元件以改变探针的能量吸收特性。 并且,通过操纵扭转和/或弯曲元件的惯性矩可以实现所需的探针特性。 其他功能包括各种联合角度界面边缘形状,枢轴切口和缓冲区。

    Probe for testing semiconductor devices with features that increase stress tolerance
    3.
    发明授权
    Probe for testing semiconductor devices with features that increase stress tolerance 有权
    用于测试具有增加应力耐受性的半导体器件的探头

    公开(公告)号:US07772859B2

    公开(公告)日:2010-08-10

    申请号:US12042295

    申请日:2008-03-04

    IPC分类号: G01R31/02

    CPC分类号: G01R1/06733 G01R1/06727

    摘要: A novel probe design is presented that increases a probe tolerance to stress fractures. The probe includes a base, a torsion element connected to the base, and a second element connected to the torsion element through a union angle. The union angle includes an interface between the torsion element and the second element, and the edge of the interface is shaped to diffuse stress. What is further-disclosed are three features that increase stress tolerance. These features include a various union angle interface edge shapes, pivot cutouts and buffers.

    摘要翻译: 提出了一种新的探针设计,增加了对应力骨折的探针耐受性。 探针包括基座,连接到基座的扭转元件和通过接合角连接到扭转元件的第二元件。 联合角度包括扭转元件和第二元件之间的界面,并且界面的边缘成形为扩散应力。 进一步披露的是增加压力容忍度的三个特征。 这些特征包括各种联合角度界面边缘形状,枢轴切口和缓冲区。

    Torsion spring probe contactor design

    公开(公告)号:US07362119B2

    公开(公告)日:2008-04-22

    申请号:US11194801

    申请日:2005-08-01

    IPC分类号: G01R1/073

    摘要: The present invention relates to a probe for making electrical connection to a contact pad on a microelectronic device. A foot having a length, a thickness, a width, a proximal end, and a distal end, is connected to a substrate. The length of the foot is greater than its width. A torsion bar having a length, a width, a thickness, a proximal end, and a distal end, is connected to the distal end of the foot at the proximal end of torsion bar. The torsion bar lies in a first plane. A spacer having a length, a width, and a thickness, is connected to the distal end of the torsion bar. An arm having a length, a width, a thickness, a proximal end, and a distal end is connected to said spacer at the arms proximal end. The arm lies in a second plane and the second plane is in a different plane than the first plane. A first post having a top side and a bottom side is connected to the arm near the distal end of the arm. A tip is electrically connected to the top side of the post.

    Process for forming microstructures
    5.
    发明申请
    Process for forming microstructures 有权
    微结构形成工艺

    公开(公告)号:US20060134820A1

    公开(公告)日:2006-06-22

    申请号:US11102982

    申请日:2005-04-11

    IPC分类号: H01L21/00 H01L21/44

    摘要: The present invention relates to a process for forming microstructures on a substrate. A plating surface is applied to a substrate. A first layer of photoresist is applied on top of the plating base. The first layer of photoresist is exposed to radiation in a pattern to render the first layer of photoresist dissolvable in a first pattern. The dissolvable photoresist is removed and a first layer of primary metal is electroplated in the area where the first layer of photoresist was removed. The remainder of the photoresist is then removed and a second layer of photoresist is then applied over the plating base and first layer of primary metal. The second layer of photoresist is then exposed to a second pattern of radiation to render the photoresist dissolvable and the dissolvable photoresist is removed. The second pattern is an area that surrounds the primary structure, but it does not entail the entire substrate. Rather it is an island surrounding the primary metal. The exposed surface of the secondary metal is then machined down to a desired height of the primary metal. The secondary metal is then etched away.

    摘要翻译: 本发明涉及一种在基板上形成微观结构的方法。 将电镀表面施加到基板。 将第一层光致抗蚀剂施加在电镀基底上。 第一层光致抗蚀剂以图案暴露于辐射,以使第一层光致抗蚀剂以第一图案溶解。 去除可溶解的光致抗蚀剂,并且在去除第一层光致抗蚀剂的区域中电镀第一层初级金属。 然后除去光致抗蚀剂的其余部分,然后将第二层光致抗蚀剂涂覆在镀覆基底和第一层金属的第一层上。 然后将第二层光致抗蚀剂暴露于第二辐射图案,以使光致抗蚀剂可溶解并除去可溶解的光致抗蚀剂。 第二图案是围绕一次结构的区域,但不包含整个基板。 相反,它是一个围绕着主要金属的岛屿。 然后将次级金属的暴露表面加工到初级金属的期望高度。 然后将二次金属蚀刻掉。

    Process for forming MEMS
    6.
    发明申请
    Process for forming MEMS 有权
    MEMS成型工艺

    公开(公告)号:US20060134819A1

    公开(公告)日:2006-06-22

    申请号:US11019912

    申请日:2004-12-21

    IPC分类号: H01L21/00 H01L21/302

    摘要: The present invention relates to a process for forming microstructures on a substrate. A plating surface is applied to a substrate. A first layer of photoresist is applied on top of the plating base. The first layer of photoresist is exposed to radiation in a pattern to render the first layer of photoresist dissolvable in a first pattern. The dissolvable photoresist is removed and a first layer of primary metal is electroplated in the area where the first layer of photoresist was removed. The remainder of the photoresist is then removed and a second layer of photoresist is then applied over the plating base and first layer of primary metal. The second layer of photoresist is then exposed to a second pattern of radiation to render the photoresist dissolvable and the dissolvable photoresist is removed. The second pattern is an area that surrounds the primary structure, but it does not entail the entire substrate. Rather it is an island surrounding the primary metal. The exposed surface of the secondary metal is then machined down to a desired height of the primary metal. The secondary metal is then etched away.

    摘要翻译: 本发明涉及一种在基板上形成微观结构的方法。 将电镀表面施加到基板。 将第一层光致抗蚀剂施加在电镀基底上。 第一层光致抗蚀剂以图案暴露于辐射,以使第一层光致抗蚀剂以第一图案溶解。 去除可溶解的光致抗蚀剂,并且在去除第一层光致抗蚀剂的区域中电镀第一层初级金属。 然后除去光致抗蚀剂的其余部分,然后将第二层光致抗蚀剂涂覆在镀覆基底和第一层金属的第一层上。 然后将第二层光致抗蚀剂暴露于第二辐射图案,以使光致抗蚀剂可溶解并除去可溶解的光致抗蚀剂。 第二图案是围绕一次结构的区域,但不包含整个基板。 相反,它是一个围绕着主要金属的岛屿。 然后将次级金属的暴露表面加工到初级金属的期望高度。 然后将二次金属蚀刻掉。

    Probe for testing semiconductor devices
    7.
    发明授权
    Probe for testing semiconductor devices 有权
    探测半导体器件的测试

    公开(公告)号:US08344748B2

    公开(公告)日:2013-01-01

    申请号:US12693428

    申请日:2010-01-25

    IPC分类号: G01R31/00

    CPC分类号: G01R1/06733 G01R1/06727

    摘要: A novel hybrid probe design is presented that comprises a torsion element and a bending element. These elements allow the probe to store the displacement energy as torsion or as bending. The novel hybrid probe comprises a probe base, a torsion element, a bending element, and a probe tip. The probe elastically deforms to absorb the displacement energy as the probe tip contacts the DUT contact pad. The bending element absorbs some of the displacement energy through bending. Because the torsion element and the bending element join at an angle between −90 degrees and 90 degrees, a portion of the displacement energy is transferred to the torsion element causing it to twist (torque). The torsion element can also bend to accommodate the storage of energy through torsion and bending. Also, adjusting the position of a pivot can be manipulated to alter the energy absorption characteristics of the probe. One or more additional angular elements may be added to change the energy absorption characteristics of the probe. And, the moment of inertia for the torsion and/or bending elements can by manipulated to achieve the desired probe characteristics. Other features include a various union angle interface edge shapes, pivot cutouts and buffers.

    摘要翻译: 提出了一种新颖的混合探针设计,其包括扭转元件和弯曲元件。 这些元件允许探头将位移能量存储为扭转或弯曲。 该新型混合探针包括探针基座,扭转元件,弯曲元件和探针尖端。 当探针尖端接触DUT接触垫时,探头弹性变形以吸收位移能量。 弯曲元件通过弯曲吸收一些位移能量。 由于扭转元件和弯曲元件以-90度和90度之间的角度接合,所以位移能量的一部分被传递到扭转元件,使其扭转(扭矩)。 扭转元件还可以弯曲以适应通过扭转和弯曲的能量存储。 此外,可以调节枢轴的位置以改变探头的能量吸收特性。 可以添加一个或多个附加角元件以改变探针的能量吸收特性。 并且,通过操纵扭转和/或弯曲元件的惯性矩可以实现所需的探针特性。 其他功能包括各种联合角度界面边缘形状,枢轴切口和缓冲区。

    Probecard system and method
    8.
    发明授权
    Probecard system and method 有权
    Probecard系统和方法

    公开(公告)号:US08278956B2

    公开(公告)日:2012-10-02

    申请号:US12756578

    申请日:2010-04-08

    IPC分类号: G01R31/00

    CPC分类号: G01R31/2889 G01R1/06744

    摘要: A microelectronic contactor assembly can include a probe head having microelectronic contactors for contacting terminals of semiconductor devices to test the semiconductor devices. A stiffener assembly can provide mechanical support to microelectronic contactors and for connecting a probe card assembly to a prober machine. A stiffener assembly may include first and second stiffener bodies that are connected together at their central portions with adjustment mechanisms such as three differential screw mechanisms. A probe head may be attached to a first stiffener body at locations outside its central portion, while a prober machine may be attached to a second stiffener body at locations outside its central portion. The first and second stiffener bodies may have different coefficients of thermal expansion. The stiffener assembly allows for differential thermal expansion of various components of the microelectronic contactor assembly while minimizing accompanying dimensional distortion that could interfere with contacting the terminals of semiconductor devices. The adjustment mechanisms allow for quick, sensitive adjustment of the positions of microelectronic contactors relative to semiconductor devices to be tested.

    摘要翻译: 微电子接触器组件可以包括具有微电子接触器的探针头,用于接触半导体器件的端子以测试半导体器件。 加强件组件可以为微电子接触器提供机械支撑并将探针卡组件连接到探测机。 加强件组件可以包括第一和第二加强件本体,其在其中心部分处与诸如三个差速螺旋机构的调节机构连接在一起。 探针头可以在其中心部分外部的位置处附接到第一加强体,而探针机可以在其中心部分外部的位置处附接到第二加强体。 第一和第二加强体可具有不同的热膨胀系数。 加强件组件允许微电子接触器组件的各种部件的差分热膨胀,同时最小化可能干扰接触半导体器件的端子的伴随的尺寸变形。 调节机构允许微电子接触器相对于要测试的半导体器件的位置的快速灵敏调节。

    Torsion spring probe contactor design
    10.
    发明申请
    Torsion spring probe contactor design 有权
    扭力弹簧探头接触器设计

    公开(公告)号:US20080106289A1

    公开(公告)日:2008-05-08

    申请号:US11983521

    申请日:2007-11-09

    IPC分类号: G01R1/067

    摘要: The present invention relates to a probe for making electrical connection to a contact pad on a microelectronic device. A foot having a length, a thickness, a width, a proximal end, and a distal end, is connected to a substrate. The length of the foot is greater than its width. A torsion bar having a length, a width, a thickness, a proximal end, and a distal end, is connected to the distal end of the foot at the proximal end of torsion bar. The torsion bar lies in a first plane. A spacer having a length, a width, and a thickness, is connected to the distal end of the torsion bar. An arm having a length, a width, a thickness, a proximal end, and a distal end is connected to said spacer at the arms proximal end. The arm lies in a second plane and the second plane is in a different plane than the first plane. A first post having a top side and a bottom side is connected to the arm near the distal end of the arm. A tip is electrically connected to the top side of the post.

    摘要翻译: 本发明涉及一种用于与微电子器件上的接触焊盘进行电连接的探针。 具有长度,厚度,宽度,近端和远端的脚连接到基底。 脚的长度大于其宽度。 具有长度,宽度,厚度,近端和远端的扭杆在扭杆的近端处连接到脚的远端。 扭杆位于第一平面内。 具有长度,宽度和厚度的间隔件连接到扭杆的远端。 具有长度,宽度,厚度,近端和远端的臂在臂近端处连接到所述间隔件。 臂位于第二平面中,第二平面位于与第一平面不同的平面上。 具有顶侧和底侧的第一柱连接到臂的远端附近的臂。 尖端电连接到柱的顶侧。