公开(公告)号：US10287686B2

公开(公告)日：2019-05-14

申请号：US13992165

申请日：2011-11-23

Applicant: Mengxin Zhao ,  Xu Liu ,  Peijun Ding ,  Hougong Wang ,  Wei Xia ,  Lihui Wen

Inventor： Mengxin Zhao ,  Xu Liu ,  Peijun Ding ,  Hougong Wang ,  Wei Xia ,  Lihui Wen

IPC: C23C16/44 ,  C23C16/46 ,  H01L21/67 ,  C23C14/02

Abstract: The present invention provides a hot plate and substrate processing equipment using the same, wherein the hot plate comprises a central sub hot plate and at least one outer ring sub hot plate located around the central sub hot plate; thermal insulation parts are provided between the central sub hot plate and the outer ring sub hot plate and between two adjacent outer ring sub hot plates, so that the heat conduction between the adjacent sub hot plates can be effectively prevented or reduced by means of the thermal insulation parts. The hot plate and the substrate processing equipment using the same provided in the present invention can effectively compensate for the heat losses in the edge region of the substrate, so as to keep the heating rate the same in each region of the substrate.

公开(公告)号：US10984993B2

公开(公告)日：2021-04-20

申请号：US13876133

申请日：2010-12-22

Applicant: Peng Chen ,  Mengxin Zhao ,  Gang Wei ,  Liang Zhang ,  Bai Yang ,  Guilong Wu ,  Peijun Ding

Inventor： Peng Chen ,  Mengxin Zhao ,  Gang Wei ,  Liang Zhang ,  Bai Yang ,  Guilong Wu ,  Peijun Ding

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/50 ,  C23C14/35

Abstract: A plasma processing apparatus includes a chamber (20) and a target (25) above the chamber (20). The surface of the target (25) contacts the processing area of the chamber (20). The chamber (20) includes an insulating sub-chamber (21) and a first conductive sub-chamber (22), which are superposed. The first conductive sub-chamber (22) is provided under the insulating sub-chamber (21). The insulating sub-chamber (21) is made of insulating material, and the first conductive sub-chamber (22) is made of metal material. A Faraday shield component (10) which is made of metal material or insulating material electroplated with conductive coatings and includes at least one slit is provided in the insulating sub-chamber (21). An inductance coil (13) surrounds the exterior of the insulating sub-chamber (21). The problem about the wafer contamination due to particles formed on the surface of the coil during the sputtering process can be solved by using the plasma processing apparatus.

公开(公告)号：US20130269614A1

公开(公告)日：2013-10-17

申请号：US13992165

申请日：2011-11-23

Applicant: Mengxin Zhao ,  Xu Liu ,  Peijun Ding ,  Hougong Wang ,  Wei Xia ,  Lihui Wen

Inventor： Mengxin Zhao ,  Xu Liu ,  Peijun Ding ,  Hougong Wang ,  Wei Xia ,  Lihui Wen

IPC: C23C16/46 ,  H01L21/67

CPC classification number: C23C16/46 ,  C23C14/02 ,  H01L21/67103

Abstract: The present invention provides a hot plate and substrate processing equipment using the same, wherein the hot plate comprises a central sub hot plate and at least one outer ring sub hot plate located around the central sub hot plate; thermal insulation parts are provided between the central sub hot plate and the outer ring sub hot plate and between two adjacent outer ring sub hot plates, so that the heat conduction between the adjacent sub hot plates can be effectively prevented or reduced by means of the thermal insulation parts. The hot plate and the substrate processing equipment using the same provided in the present invention can effectively compensate for the heat losses in the edge region of the substrate, so as to keep the heating rate the same in each region of the substrate.

Abstract translation: 本发明提供一种使用该热板的加热板和基板加工装置，其特征在于，所述加热板包括中央副加热板和位于所述中央副加热板周围的至少一个外环副加热板; 绝热部件设置在中央辅助热板和外环副加热板之间以及两个相邻的外圈副加热板之间，从而可以通过热量有效地防止或减少相邻副加热板之间的热传导 绝缘部件。 本发明提供的加热板和使用该基板的基板处理设备可以有效补偿基板边缘区域的热损失，从而保持基板每个区域的加热速率相同。

公开(公告)号：US20130256129A1

公开(公告)日：2013-10-03

申请号：US13876133

申请日：2010-12-22

Applicant: Peng Chen ,  Mengxin Zhao ,  Gang Wei ,  Liang Zhang ,  Bai Yang ,  Guilong Wu ,  Peijun Ding

Inventor： Peng Chen ,  Mengxin Zhao ,  Gang Wei ,  Liang Zhang ,  Bai Yang ,  Guilong Wu ,  Peijun Ding

IPC: C23C14/35

Abstract: A plasma processing apparatus includes a chamber (20) and a target (25) above the chamber (20). The surface of the target (25) contacts the processing area of the chamber (20). The chamber (20) includes an insulating sub-chamber (21) and a first conductive sub-chamber (22), which are superposed. The first conductive sub-chamber (22) is provided under the insulating sub-chamber (21). The insulating sub-chamber (21) is made of insulating material, and the first conductive sub-chamber (22) is made of metal material. A Faraday shield component (10) which is made of metal material or insulating material electroplated with conductive coatings and includes at least one slit is provided in the insulating sub-chamber (21). An inductance coil (13) surrounds the exterior of the insulating sub-chamber (21). The problem about the wafer contamination due to particles formed on the surface of the coil during the sputtering process can be solved by using the plasma processing apparatus.

Abstract translation: 等离子体处理装置包括在室（20）上方的室（20）和目标（25）。 靶（25）的表面与腔室（20）的处理区域接触。 所述腔室（20）包括叠置的绝缘子室（21）和第一导电子室（22）。 第一导电子室（22）设置在绝缘子室（21）的下方。 绝缘子室（21）由绝缘材料制成，第一导电子室（22）由金属材料制成。 在绝缘子室（21）中设置由金属材料制成的法拉第屏蔽部件（10）或电镀有导电涂层并且包括至少一个狭缝的绝缘材料。 电感线圈（13）围绕绝缘子室（21）的外部。 通过使用等离子体处理装置可以解决由于在溅射过程中在线圈表面上形成的颗粒导致的晶片污染的问题。