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    Methods, apparatus and computer program products for fabricating masks and semiconductor devices using model-based optical proximity effect correction and lithography-friendly layout
    1.
    发明授权
    Methods, apparatus and computer program products for fabricating masks and semiconductor devices using model-based optical proximity effect correction and lithography-friendly layout 有权
    使用基于模型的光学邻近效应校正和光刻友好布局制造掩模和半导体器件的方法，装置和计算机程序产品

    公开(公告)号：US08563197B2

    公开(公告)日：2013-10-22

    申请号：US12238884

    申请日：2008-09-26

    Applicant: Sung-soo Suh ,  Suk-joo Lee ,  Yong-hee Park ,  Mi-kyeong Lee

    Inventor： Sung-soo Suh ,  Suk-joo Lee ,  Yong-hee Park ,  Mi-kyeong Lee

    IPC: G06F17/50

    CPC classification number: G03F1/36

    Abstract: Design rules for circuit patterns of a semiconductor device are identified, and schematic layouts of the circuit patterns are generated according to the design rules. Lithography friendly layout (LFL) circuit patterns are generated from the schematic layouts. Target layout circuit patterns are generated from the LFL circuit patterns. Optical proximity effect correction (OPC) is performed on the target layout circuit patterns to generate OPC circuit patterns. A mask is fabricated from the OPC circuit patterns, and may be used fabricate a semiconductor device.

    Abstract translation: 识别半导体器件的电路图案的设计规则，根据设计规则生成电路图案的原理图布局。 从原理图布局生成光刻友好布局（LFL）电路图案。 目标布局电路图案是从LFL电路图形生成的。 对目标布局电路图案执行光学邻近效应校正（OPC）以产生OPC电路图案。 掩模由OPC电路图形制成，可用于制造半导体器件。

    Systems, methods and computer program products for forming photomasks with reduced likelihood of feature collapse, and photomasks so formed
    2.
    发明授权
    Systems, methods and computer program products for forming photomasks with reduced likelihood of feature collapse, and photomasks so formed 有权
    用于形成具有降低特征崩溃可能性的光掩模的系统，方法和计算机程序产品以及如此形成的光掩模

    公开(公告)号：US08484584B2

    公开(公告)日：2013-07-09

    申请号：US13281787

    申请日：2011-10-26

    Applicant: Mi-kyeong Lee ,  Seong-woon Choi

    Inventor： Mi-kyeong Lee ,  Seong-woon Choi

    IPC: G06F17/50 ,  G03F1/00 ,  G03C5/00

    CPC classification number: G03F1/70

    Abstract: At least one pattern of a photomask is identified that has a likelihood of causing collapse of a microelectronic device feature that is formed using the photomask, due to surface tension of a solution that is applied to the feature during manufacture of the microelectronic device. The patterns of the photomask are then modified to reduce the likelihood of the collapse. The photomask may be formed and the photomask may be used to manufacture microelectronic devices. Related methods, systems, devices and computer program products are described.

    Abstract translation: 由于在微电子器件的制造期间由于施加到特征的溶液的表面张力，识别出具有导致由光掩模形成的微电子器件特征崩溃的可能性的至少一个光掩模图案。 然后修改光掩模的图案以减少崩溃的可能性。 可以形成光掩模，并且可以使用光掩模来制造微电子器件。 描述相关方法，系统，设备和计算机程序产品。

    SYSTEMS, METHODS AND COMPUTER PROGRAM PRODUCTS FOR FORMING PHOTOMASKS WITH REDUCED LIKELIHOOD OF FEATURE COLLAPSE, AND PHOTOMASKS SO FORMED
    3.
    发明申请
    SYSTEMS, METHODS AND COMPUTER PROGRAM PRODUCTS FOR FORMING PHOTOMASKS WITH REDUCED LIKELIHOOD OF FEATURE COLLAPSE, AND PHOTOMASKS SO FORMED 有权
    系统，方法和计算机程序产品，用于形成具有减少特征褶皱的光子，并形成光电子

    公开(公告)号：US20120210278A1

    公开(公告)日：2012-08-16

    申请号：US13281787

    申请日：2011-10-26

    Applicant: Mi-kyeong Lee ,  Seong-woon Choi

    Inventor： Mi-kyeong Lee ,  Seong-woon Choi

    IPC: G06F17/50

    CPC classification number: G03F1/70

    Abstract: At least one pattern of a photomask is identified that has a likelihood of causing collapse of a microelectronic device feature that is formed using the photomask, due to surface tension of a solution that is applied to the feature during manufacture of the microelectronic device. The patterns of the photomask are then modified to reduce the likelihood of the collapse. The photomask may be formed and the photomask may be used to manufacture microelectronic devices. Related methods, systems, devices and computer program products are described.

    Abstract translation: 由于在微电子器件的制造期间由于施加到特征的溶液的表面张力，识别出具有导致由光掩模形成的微电子器件特征崩溃的可能性的至少一个光掩模图案。 然后修改光掩模的图案以减少崩溃的可能性。 可以形成光掩模，并且可以使用光掩模来制造微电子器件。 描述相关方法，系统，设备和计算机程序产品。

    METHODS, APPARATUS AND COMPUTER PROGRAM PRODUCTS FOR FABRICATING MASKS AND SEMICONDUCTOR DEVICES USING MODEL-BASED OPTICAL PROXIMITY EFFECT CORRECTION AND LITHOGRAPHY-FRIENDLY LAYOUT
    4.
    发明申请
    METHODS, APPARATUS AND COMPUTER PROGRAM PRODUCTS FOR FABRICATING MASKS AND SEMICONDUCTOR DEVICES USING MODEL-BASED OPTICAL PROXIMITY EFFECT CORRECTION AND LITHOGRAPHY-FRIENDLY LAYOUT 有权
    使用基于模型的光学近似效应校正和平滑友好布局的方法，装置和计算机程序产品来制作掩模和半导体器件

    公开(公告)号：US20090087758A1

    公开(公告)日：2009-04-02

    申请号：US12238884

    申请日：2008-09-26

    Applicant: Sung-soo Suh ,  Suk-joo Lee ,  Yong-hee Park ,  Mi-kyeong Lee

    Inventor： Sung-soo Suh ,  Suk-joo Lee ,  Yong-hee Park ,  Mi-kyeong Lee

    IPC: G03F7/20 ,  G03F1/00

    CPC classification number: G03F1/36

    Abstract: Design rules for circuit patterns of a semiconductor device are identified, and schematic layouts of the circuit patterns are generated according to the design rules. Lithography friendly layout (LFL) circuit patterns are generated from the schematic layouts. Target layout circuit patterns are generated from the LFL circuit patterns. Optical proximity effect correction (OPC) is performed on the target layout circuit patterns to generate OPC circuit patterns. A mask is fabricated from the OPC circuit patterns, and may be used fabricate a semiconductor device.

    Abstract translation: 识别半导体器件的电路图案的设计规则，根据设计规则生成电路图案的原理图布局。 从原理图布局生成光刻友好布局（LFL）电路图案。 目标布局电路图案是从LFL电路图形生成的。 对目标布局电路图案执行光学邻近效应校正（OPC）以产生OPC电路图案。 掩模由OPC电路图形制成，可用于制造半导体器件。

    Composition for plasma electrolytic oxidation (PEO) treatment of magnesium alloy products
    7.
    发明授权
    Composition for plasma electrolytic oxidation (PEO) treatment of magnesium alloy products 失效
    用于镁合金产品的等离子体电解氧化（PEO）处理的组成

    公开(公告)号：US08337689B2

    公开(公告)日：2012-12-25

    申请号：US12855816

    申请日：2010-08-13

    Applicant: Gi Yeol Yun ,  Jae In You ,  Jae Yong You ,  Jae Gon Yun ,  Jin Hie Kim ,  Chang Hun Park ,  Duck Hee Kim ,  Mi Kyeong Lee

    Inventor： Gi Yeol Yun ,  Jae In You ,  Jae Yong You ,  Jae Gon Yun ,  Jin Hie Kim ,  Chang Hun Park ,  Duck Hee Kim ,  Mi Kyeong Lee

    IPC: C25D11/30

    CPC classification number: C25D11/30

    Abstract: Disclosed herein is a composition for plasma electrolytic oxidation (PEO) treatment of magnesium alloy products, which contains a sodium hydroxide (NaOH) solution as a main component, the composition comprising, based on the weight of sodium hydroxide contained in the sodium hydroxide solution: 1-20 wt % of sodium fluoride (NaF); 1-15 wt % of trisodium phosphate (Na3PO4); 1-10 wt % of sodium pyrophosphate (Na4P2O7); 1-20 wt % of aluminum hydroxide (Al(OH)3); 1-20 wt % of sodium fluorosilicate (Na2SiF6); 1-10 wt % of potassium hydroxide (KOH); 1-15 wt % of potassium acetate (C2H3O2K); and 1-10 wt % of rare earth metal powder. The disclosed composition can form a firm, dense and uniform oxide film on the surface of a magnesium alloy product.

    Abstract translation: 本发明公开了一种用于以氢氧化钠（NaOH）溶液为主要组分的镁合金产品的等离子体电解氧化（PEO）处理组合物，该组合物包含基于氢氧化钠溶液中所含的氢氧化钠的重量： 1-20重量％的氟化钠（NaF）; 1-15重量％的磷酸三钠（Na 3 PO 4）; 1-10重量％焦磷酸钠（Na4P2O7）; 1-20重量％的氢氧化铝（Al（OH）3）; 1-20重量％的氟硅酸钠（Na2SiF6）; 1-10重量％的氢氧化钾（KOH）; 1-15重量％的乙酸钾（C2H3O2K）; 和1-10重量％的稀土金属粉末。 所公开的组合物可以在镁合金产品的表面上形成牢固，致密且均匀的氧化膜。

    Composition for plasma electrolytic oxidation (PEO) treatment of Magnesium alloy products
    8.
    发明申请
    Composition for plasma electrolytic oxidation (PEO) treatment of Magnesium alloy products 失效
    镁合金产品等离子体电解氧化（PEO）处理的组成

    公开(公告)号：US20110048965A1

    公开(公告)日：2011-03-03

    申请号：US12855816

    申请日：2010-08-13

    Applicant: Gi Yeol YUN ,  Jae In YOU ,  Jae Yong YOU ,  Jae Gon YUN ,  Jin Hie KIM ,  Chang Hun PARK ,  Duck Hee KIM ,  Mi Kyeong LEE

    Inventor： Gi Yeol YUN ,  Jae In YOU ,  Jae Yong YOU ,  Jae Gon YUN ,  Jin Hie KIM ,  Chang Hun PARK ,  Duck Hee KIM ,  Mi Kyeong LEE

    IPC: C23F13/00

    CPC classification number: C25D11/30

    Abstract: Disclosed herein is a composition for plasma electrolytic oxidation (PEO) treatment of magnesium alloy products, which contains a sodium hydroxide (NaOH) solution as a main component, the composition comprising, based on the weight of sodium hydroxide contained in the sodium hydroxide solution: 1-20 wt % of sodium fluoride (NaF); 1-15 wt % of trisodium phosphate (Na3PO4); 1-10 wt % of sodium pyrophosphate (Na4P2O7); 1-20 wt % of aluminum hydroxide (Al(OH)3); 1-20 wt % of sodium fluorosilicate (Na2SiF6); 1-10 wt % of potassium hydroxide (KOH); 1-15 wt % of potassium acetate (C2H3O2K); and 1-10 wt % of rare earth metal powder. The disclosed composition can form a firm, dense and uniform oxide film on the surface of a magnesium alloy product.

    Abstract translation: 本发明公开了一种用于以氢氧化钠（NaOH）溶液为主要组分的镁合金产品的等离子体电解氧化（PEO）处理组合物，该组合物包含基于氢氧化钠溶液中所含的氢氧化钠的重量： 1-20重量％的氟化钠（NaF）; 1-15重量％磷酸三钠（Na 3 PO 4）; 1-10重量％焦磷酸钠（Na4P2O7）; 1-20重量％的氢氧化铝（Al（OH）3）; 1-20重量％的氟硅酸钠（Na2SiF6）; 1-10重量％的氢氧化钾（KOH）; 1-15重量％的乙酸钾（C2H3O2K）; 和1-10重量％的稀土金属粉末。 所公开的组合物可以在镁合金产品的表面上形成牢固，致密且均匀的氧化膜。

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