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公开(公告)号：US07394279B2
公开(公告)日：2008-07-01
申请号：US11461312
申请日：2006-07-31
Applicant: Mi-Sung Lee , Yu-Sin Yang , Chung-Sam Jun , Byung-Sug Lee
Inventor： Mi-Sung Lee , Yu-Sin Yang , Chung-Sam Jun , Byung-Sug Lee
CPC classification number: G01R31/2648 , G01R29/12 , G01R31/2656
Abstract: In a method of measuring a surface voltage of an insulating layer, the number of times that surface voltages are measured in a depletion region increases so that precise data about the depletion region may be obtained. The number of times that the surface voltages are measured in an accumulation region and an inversion region decreases so that the data about the depletion region may be rapidly obtained.
Abstract translation: 在测量绝缘层的表面电压的方法中，在耗尽区中测量表面电压的次数增加，从而可以获得关于耗尽区的精确数据。 在积累区域和反转区域中测量表面电压的次数减少，从而可以快速获得关于耗尽区域的数据。
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公开(公告)号：US20070202615A1
公开(公告)日：2007-08-30
申请号：US11702599
申请日：2007-02-06
Applicant: Byung-Sug Lee , Mi-Sung Lee , Yu-Sin Yang , Yun-Jung Jee , Chung-Sam Jun
Inventor： Byung-Sug Lee , Mi-Sung Lee , Yu-Sin Yang , Yun-Jung Jee , Chung-Sam Jun
CPC classification number: H01L22/12
Abstract: In a method of measuring a critical dimension for conductive structures or openings exposing conductive structures formed on a substrate, a corona ion charge is deposited on the conductive structures and/or an insulating layer having the openings in a measurement region of the substrate. The critical dimension of the conductive structures or the openings may be determined by comparing variations of a surface voltage caused by leakage current through the conductive structures with reference data to thereby improve reliability of the critical dimension measurement.
Abstract translation: 在测量形成在衬底上的导电结构的导电结构或开口的临界尺寸的方法中，电晕离子电荷沉积在导电结构和/或在衬底的测量区域中具有开口的绝缘层上。 可以通过将通过导电结构的漏电流引起的表面电压的变化与参考数据进行比较来确定导电结构或开口的临界尺寸，从而提高临界尺寸测量的可靠性。
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公开(公告)号：US20070023834A1
公开(公告)日：2007-02-01
申请号：US11461312
申请日：2006-07-31
Applicant: Mi-Sung LEE , Yu-Sin YANG , Chung-Sam JUN , Byung-Sug LEE
Inventor： Mi-Sung LEE , Yu-Sin YANG , Chung-Sam JUN , Byung-Sug LEE
IPC: H01L27/12
CPC classification number: G01R31/2648 , G01R29/12 , G01R31/2656
Abstract: In a method of measuring a surface voltage of an insulating layer, the number of times that surface voltages are measured in a depletion region increases so that precise data about the depletion region may be obtained. The number of times that the surface voltages are measured in an accumulation region and an inversion region decreases so that the data about the depletion region may be rapidly obtained.
Abstract translation: 在测量绝缘层的表面电压的方法中，在耗尽区中测量表面电压的次数增加，从而可以获得关于耗尽区的精确数据。 在积累区域和反转区域中测量表面电压的次数减少，从而可以快速获得关于耗尽区域的数据。
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