公开(公告)号：US08518812B2

公开(公告)日：2013-08-27

申请号：US13113281

申请日：2011-05-23

申请人： Marcello Mariani ,  Micaela Gabriella Tomasini

发明人： Marcello Mariani ,  Micaela Gabriella Tomasini

IPC分类号： H01L21/44

CPC分类号： H01L29/401 ,  H01L21/743 ,  H01L27/1027 ,  H01L27/10876 ,  H01L27/10891 ,  H01L27/2454 ,  H01L45/06 ,  H01L45/16

摘要： Some embodiments include methods of forming contacts. A row of projections may be formed over a semiconductor substrate. The projections may include a plurality of repeating components of an array, and a terminal projection. The terminal projection may have a sacrificial material spaced from semiconductor material of the substrate by a dielectric structure. An electrically conductive line may be formed along the row. The line may wrap around an end of the terminal projection and bifurcate into two branches that are along opposing sides of the repeating components. The individual branches may have regions spaced from the sacrificial material by segments of gate dielectric. The sacrificial material may be removed, together with the segments of gate dielectric, to form a contact opening. An electrically conductive contact may be formed within the contact opening and directly against the regions of the branches.

摘要翻译： 一些实施方案包括形成接触的方法。 可以在半导体衬底上形成一排突起。 突起可以包括阵列的多个重复部件和端子突起。 端子突起可以具有通过电介质结构与衬底的半导体材料间隔开的牺牲材料。 可以沿着行形成导电线。 该线可以围绕端子突起的一端包围并分叉成两个沿着重复部件的相对侧的分支。 各个分支可以具有通过栅极电介质的段与牺牲材料隔开的区域。 牺牲材料可以与栅极电介质的段一起去除以形成接触开口。 可以在接触开口内形成导电接触，并直接抵靠分支的区域。

公开(公告)号：US20120302052A1

公开(公告)日：2012-11-29

申请号：US13113281

申请日：2011-05-23

申请人： Marcello Mariani ,  Micaela Gabriella Tomasini

发明人： Marcello Mariani ,  Micaela Gabriella Tomasini

IPC分类号： H01L21/28 ,  H01L21/768

CPC分类号： H01L29/401 ,  H01L21/743 ,  H01L27/1027 ,  H01L27/10876 ,  H01L27/10891 ,  H01L27/2454 ,  H01L45/06 ,  H01L45/16

摘要： Some embodiments include methods of forming contacts. A row of projections may be formed over a semiconductor substrate. The projections may include a plurality of repeating components of an array, and a terminal projection. The terminal projection may have a sacrificial material spaced from semiconductor material of the substrate by a dielectric structure. An electrically conductive line may be formed along the row. The line may wrap around an end of the terminal projection and bifurcate into two branches that are along opposing sides of the repeating components. The individual branches may have regions spaced from the sacrificial material by segments of gate dielectric. The sacrificial material may be removed, together with the segments of gate dielectric, to form a contact opening. An electrically conductive contact may be formed within the contact opening and directly against the regions of the branches.

摘要翻译： 一些实施方案包括形成接触的方法。 可以在半导体衬底上形成一排突起。 突起可以包括阵列的多个重复部件和端子突起。 端子突起可以具有通过电介质结构与衬底的半导体材料间隔开的牺牲材料。 可以沿着行形成导电线。 该线可以围绕端子突起的一端包围并分叉成两个沿着重复部件的相对侧的分支。 各个分支可以具有通过栅极电介质的段与牺牲材料隔开的区域。 牺牲材料可以与栅极电介质的段一起去除以形成接触开口。 可以在接触开口内形成导电接触，并直接抵靠分支的区域。