METHOD AND DEVICE FOR THE TREATMENT OF SURFACES
    1.
    发明申请
    METHOD AND DEVICE FOR THE TREATMENT OF SURFACES 审中-公开
    用于处理表面的方法和装置

    公开(公告)号:US20100275950A1

    公开(公告)日:2010-11-04

    申请号:US12741861

    申请日:2008-12-09

    IPC分类号: C03C23/00 C23F1/08

    摘要: The invention relates to a device and a method for the treatment of surfaces with a plasma produced under atmospheric pressure. The device according to the invention is formed as a portable handheld unit and comprises a plasma nozzle (16) for producing a plasma jet (18), which comprises a nozzle opening (17) and at least one electrode and counter-electrode pair (27, 28) arranged upstream of the nozzle opening, the effective electrode surfaces of which pair of electrodes each have a dielectric coating (29, 30), the electrode (27) and the counter-electrode (28) defining between them a working space (34) in which a working gas can be at least partially ionized by means of a dielectric barrier gas discharge, a high-voltage generator (19, 20), which is electrically connected to the electrode and counter-electrode pair (27, 28), a feeding means (15), which produces a gas flow of the working gas from a working gas source into the working space (34) and through the nozzle opening (17), the working gas source being ambient air, and a mains-independent energy source (12) for supplying the high-voltage generator (19, 20) and the feeding means (19).

    摘要翻译: 本发明涉及用于在大气压下产生的等离子体处理表面的装置和方法。 根据本发明的装置形成为便携式手持单元,并且包括用于产生等离子体射流(18)的等离子体喷嘴(16),其包括喷嘴开口(17)和至少一个电极和对电极对(27 ,28)布置在所述喷嘴开口的上游,所述有效电极表面的一对电极各自具有电介质涂层(29,30),所述电极(27)和所述对电极(28)在它们之间限定工作空间 34),其中工作气体可以通过介电阻挡气体放电至少部分地离子化,电连接到电极和对电极对(27,28)的高压发生器(19,20) (15),其将工作气体从工作气体源产生气体流入工作空间(34)并通过喷嘴开口(17),工作气体源是环境空气,以及主干 - 用于供应高压发生器(19,20)的独立能量源(12) 和进给装置(19)。

    CLAMPING AND CONTACTING DEVICE FOR THIN SILICON RODS
    2.
    发明申请
    CLAMPING AND CONTACTING DEVICE FOR THIN SILICON RODS 有权
    用于薄硅棒的夹紧和接触装置

    公开(公告)号:US20120135635A1

    公开(公告)日:2012-05-31

    申请号:US13201888

    申请日:2010-03-29

    IPC分类号: H01R13/62

    摘要: A clamping and contacting device for mounting and electrically contacting thin silicon rods in silicon deposition reactors is disclosed, the clamping and contacting device having a rod holder for receiving one end of a thin silicon rod. The rod holder comprises at least three contact elements disposed around a receiving space for the thin silicon rod. Each of the contact elements forms a contact surface facing towards a receiving space for electrically and mechanically contacts the thin silicon rod, wherein the contact surfaces of adjacent contact elements are spaced apart.

    摘要翻译: 公开了一种用于在硅沉积反应器中安装和电接触薄硅棒的夹紧和接触装置,夹紧和接触装置具有用于容纳薄硅棒的一端的杆保持器。 杆保持器包括围绕用于薄硅棒的接收空间设置的至少三个接触元件。 每个接触元件形成面向容纳空间的接触表面,用于电和机械接触薄硅棒,其中相邻接触元件的接触表面间隔开。

    NOZZLE ARRANGEMENT AND CVD-REACTOR
    3.
    发明申请
    NOZZLE ARRANGEMENT AND CVD-REACTOR 审中-公开
    喷嘴布置和CVD反应器

    公开(公告)号:US20130019802A1

    公开(公告)日:2013-01-24

    申请号:US13334160

    申请日:2011-12-22

    申请人: Michael Leck

    发明人: Michael Leck

    IPC分类号: B05B1/34 C23C16/455

    CPC分类号: C23C16/45563 B05B1/323

    摘要: A nozzle arrangement has a nozzle body having an inlet, an outlet and a flow space arranged therebetween, and at least one control unit. The control unit has a control part and a setting part. The control part is movable within the flow space and defines a flow cross section within the flow space, which is sufficiently small to cause a loss of pressure at the control part upon a flow of gas through the nozzle body, the loss of pressure biasing the control part towards the outlet. The setting part is movable with the control part and has at least one section, which upon movement thereof varies the flow cross section of the outlet. At least one biasing element is provided, which biases the control part in a direction away from the outlet. Furthermore, a CVD-reactor incorporating such a nozzle arrangement in a bottom wall thereof is described.

    摘要翻译: 喷嘴装置具有喷嘴主体,其具有设置在其间的入口,出口和流动空间以及至少一个控制单元。 控制单元具有控制部和设定部。 控制部分可在流动空间内移动并且限定流动空间内的流动横截面,该流动空间足够小,以致在通过喷嘴体的气体流动时导致控制部分处的压力损失, 控制部分朝向出口。 设置部分可与控制部分一起移动并且具有至少一个部分,其在移动时改变出口的流动横截面。 提供至少一个偏置元件,其偏压控制部件在远离出口的方向上。 此外,描述了在其底壁中并入有这种喷嘴装置的CVD反应器。

    Clamping and contacting device for thin silicon rods
    4.
    发明授权
    Clamping and contacting device for thin silicon rods 有权
    薄硅棒夹紧和接触装置

    公开(公告)号:US09238584B2

    公开(公告)日:2016-01-19

    申请号:US13201888

    申请日:2010-03-29

    摘要: A clamping and contacting device for mounting and electrically contacting thin silicon rods in silicon deposition reactors is disclosed, the clamping and contacting device having a rod holder for receiving one end of a thin silicon rod. The rod holder comprises at least three contact elements disposed around a receiving space for the thin silicon rod. Each of the contact elements forms a contact surface facing towards a receiving space for electrically and mechanically contacts the thin silicon rod, wherein the contact surfaces of adjacent contact elements are spaced apart.

    摘要翻译: 公开了一种用于在硅沉积反应器中安装和电接触薄硅棒的夹紧和接触装置,夹紧和接触装置具有用于容纳薄硅棒的一端的杆保持器。 杆保持器包括围绕用于薄硅棒的接收空间设置的至少三个接触元件。 每个接触元件形成面向容纳空间的接触表面,用于电和机械地接触薄硅棒,其中相邻接触元件的接触表面间隔开。