公开(公告)号：US07267784B2

公开(公告)日：2007-09-11

申请号：US11447212

申请日：2006-06-05

申请人： Mingming Fang ,  Michael R. Ianiro ,  Don Eisenhour

发明人： Mingming Fang ,  Michael R. Ianiro ,  Don Eisenhour

IPC分类号： C09K13/00

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/3212

摘要： Compositions and methods for planarizing or polishing a surface, particularly a semiconductor wafer surface. The polishing compositions described herein comprise (a) a liquid carrier; (b) purified clay; and optional additives, such as (c) a chemical accelerator; and (d) a complexing or coupling agent capable of chemically or ionically complexing with, or coupling to, the metal and/or insulating material removed during the polishing process. The complexing or coupling agent carries away the removed metal and/or silicon dioxide insulator particles, during polishing, to prevent the separated particles from returning to the surface from which they were removed. Also disclosed are methods of planarizing or polishing a surface comprising contacting the surface with the compositions.

摘要翻译： 用于平坦化或抛光表面，特别是半导体晶片表面的组合物和方法。 本文所述的抛光组合物包含（a）液体载体; （b）纯化粘土; 和任选的添加剂，例如（c）化学加速剂; 和（d）能够与在抛光过程中除去的金属和/或绝缘材料化学或离子络合或耦合的络合或偶联剂。 络合或偶联剂在抛光期间携带去除的金属和/或二氧化硅绝缘体颗粒，以防止分离的颗粒返回到它们被除去的表面。 还公开了平面化或抛光表面的方法，包括使表面与组合物接触。

公开(公告)号：US07087529B2

公开(公告)日：2006-08-08

申请号：US10677433

申请日：2003-10-02

申请人： Mingming Fang ,  Michael R. Ianiro ,  Don D. Eisenhour

发明人： Mingming Fang ,  Michael R. Ianiro ,  Don D. Eisenhour

IPC分类号： H01L21/302

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/3212

摘要： A chemical-mechanical abrasive composition for use in semiconductor processing uses abrasive particles having a non-spherical morphology.

摘要翻译： 用于半导体加工的化学机械磨料组合物使用具有非球形形态的磨料颗粒。

公开(公告)号：US07223156B2

公开(公告)日：2007-05-29

申请号：US11131962

申请日：2005-05-18

申请人： Mingming Fang ,  Michael R. Ianiro ,  Don Eisenhour

发明人： Mingming Fang ,  Michael R. Ianiro ,  Don Eisenhour

IPC分类号： B24B1/00

CPC分类号： C09K3/1463 ,  C09G1/02 ,  C09K3/1409 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

摘要： Compositions and methods for planarizing or polishing a corundum, GaAs, GaP or GaAs/GaP alloy surface, particularly a semiconductor wafer surface. The polishing compositions described herein comprise (a) a liquid carrier; (b) a smectite clay, preferably a sodium smectite clay; and optional additives, such as (c) CeO2, SiO2 and/or Al2O3 abrasive particles, (d) a chemical accelerator; and (e) a complexing or coupling agent capable of chemically or ionically complexing with, or coupling to, the material removed during the polishing process. The optional complexing or coupling agent carries away the removed particles, during polishing, to prevent the separated particles from returning to the surface from which they were removed. Also disclosed are methods of planarizing or polishing corundum, GaAs, GaP and GaAs/GaP alloy surfaces comprising contacting the surface with the compositions.

摘要翻译： 用于平坦化或抛光刚玉，GaAs，GaP或GaAs / GaP合金表面，特别是半导体晶片表面的组合物和方法。 本文所述的抛光组合物包含（a）液体载体; （b）绿土粘土，优选绿土粘土; 和任选的添加剂，例如（c）CeO 2 SiO 2 SiO 2和/或Al 2 O 3 3研磨剂 颗粒，（d）化学加速剂; 和（e）能够与在抛光过程中除去的材料化学或离子络合或耦合的络合或偶联剂。 任选的络合剂或偶联剂在抛光过程中携带去除的颗粒，以防止分离的颗粒返回到它们被除去的表面。 还公开了平面化或抛光刚玉，GaAs，GaP和GaAs / GaP合金表面的方法，包括使表面与组合物接触。

公开(公告)号：US07112123B2

公开(公告)日：2006-09-26

申请号：US10867337

申请日：2004-06-14

申请人： Mingming Fang ,  Michael R. Ianiro ,  Don Eisenhour

发明人： Mingming Fang ,  Michael R. Ianiro ,  Don Eisenhour

IPC分类号： B24B1/00

CPC分类号： C09G1/02 ,  C03C19/00 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053 ,  H01L21/3212

摘要： A composition for planarizing or polishing a surface comprising (a) a liquid carrier, and (b) solids comprising about 0.1 to about 10% by weight clay abrasive particles, and about 0.1% to about 50% by weight CeO2 particles, based on the total weight of solids in the composition, said clay and CeO2 abrasive particles having a particle size such that at least 90% of the particles (by number), when slurried in water, have a particle size in the range of about 10 nm to about 10 μm.

摘要翻译： 用于平坦化或抛光表面的组合物，其包含（a）液体载体，和（b）包含约0.1至约10重量％的粘土磨料颗粒和约0.1重量％至约50重量％的CeO 2 / SUB>颗粒，基于组合物中固体的总重量，所述粘土和CeO 2 O 3研磨颗粒具有使得至少90％的颗粒（数量）的颗粒，当浆料 在水中，具有在约10nm至约10um范围内的粒度。