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公开(公告)号:US6104043A
公开(公告)日:2000-08-15
申请号:US803380
申请日:1997-02-20
申请人: Willy Hermansson , Bo Bijlenga , Lennart Ramberg , Kurt Rottner , Lennart Zdansky , Christopher Ian Harris , Mietek Bakowski , Adolf Schoner , Nils Lundberg , Mikael Ostling , Fanny Dahlquist
发明人: Willy Hermansson , Bo Bijlenga , Lennart Ramberg , Kurt Rottner , Lennart Zdansky , Christopher Ian Harris , Mietek Bakowski , Adolf Schoner , Nils Lundberg , Mikael Ostling , Fanny Dahlquist
IPC分类号: H01L21/04 , H01L29/24 , H01L29/872 , H01L31/0312 , H01L27/095 , H01L29/74
CPC分类号: H01L29/1608 , H01L29/6606 , H01L29/872
摘要: A Schottky diode of SiC has a substrate layer, a drift layer and emitter layer regions formed in the drift layer. A metal layer makes an ohmic contact to the emitter layer regions and Schottky contact to the drift layer. A depletion of the drift layer region between two adjacent emitter layer regions is allowed in the blocking state of the diode making the two adjacent p-type emitter layer regions form a continuous depleted region therebetween in this state.
摘要翻译: SiC的肖特基二极管具有在漂移层中形成的衬底层,漂移层和发射极层区域。 金属层与发射极层区域发生欧姆接触,并与漂移层进行肖特基接触。 在二极管的阻断状态下允许两个相邻发射极层区域之间的漂移层区域的耗尽,使得在该状态下两个相邻的p型发射极层区域之间形成连续的耗尽区域。