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26 条记录 (耗时 0.013 秒)

    Gate control circuit, power module and associated method
    1.
    发明授权
    Gate control circuit, power module and associated method 有权
    门控电路，电源模块及相关方法

    公开(公告)号：US08847664B2

    公开(公告)日：2014-09-30

    申请号：US14004630

    申请日：2011-03-16

    申请人： Filippo Chimento ,  Willy Hermansson ,  Staffan Norrga

    发明人： Filippo Chimento ,  Willy Hermansson ,  Staffan Norrga

    IPC分类号： H03K17/00 ,  H02M1/32 ,  H03K17/12 ,  H03K17/082

    CPC分类号： H03K17/00 ,  H02M1/088 ,  H02M1/32 ,  H03K17/0828 ,  H03K17/127

    摘要： A gate control circuit including: a gate input arranged to receive an input gate feed signal; a gate output arranged to be connected, during normal operation, to at least one switching module for controlling current through a main circuit, the gate output being connected to the gate input; a power supply; and a switch connected between the power supply and the gate output, the switch being arranged to close as a response to a failure. A corresponding power module and method are also presented.

    摘要翻译： 一种栅极控制电路，包括：栅极输入端，用于接收输入栅极馈电信号; 栅极输出，布置成在正常操作期间连接到至少一个用于控制通过主电路的电流的开关模块，栅极输出连接到栅极输入; 电源; 以及连接在电源和门输出之间的开关，开关被布置成作为对故障的响应而闭合。 还提出了相应的功率模块和方法。

    GATE CONTROL CIRCUIT, POWER MODULE AND ASSOCIATED METHOD
    2.
    发明申请
    GATE CONTROL CIRCUIT, POWER MODULE AND ASSOCIATED METHOD 有权
    门控电路，功率模块及相关方法

    公开(公告)号：US20140168840A1

    公开(公告)日：2014-06-19

    申请号：US14127877

    申请日：2011-06-20

    申请人： Jürgen Häfner ,  Willy Hermansson

    发明人： Jürgen Häfner ,  Willy Hermansson

    IPC分类号： H02H9/02

    CPC分类号： H02H9/02 ,  H02M1/32 ,  H03K17/107 ,  H03K17/127 ,  H03K17/18 ,  H03K17/78

    摘要： It is presented a gate control circuit comprising: a main gate unit arranged to supply, via a plurality of main gate unit outputs, a gate signal to respective gates of a plurality of power switches, for controlling a main current; and an auxiliary gate unit comprising an optical power converter for converting incoming optical power to an auxiliary electrical gate signal. The auxiliary gate unit is arranged to, when a failure occurs in one of the plurality of power switches, provide the auxiliary electrical gate signal to respective gates of any of the plurality of power switches still being in operation. A corresponding power module and method are also presented.

    摘要翻译： 提供了一种门控电路，包括：主门单元，被布置成经由多个主门单元输出将门信号提供给多个功率开关的各个门，用于控制主电流; 以及辅助门单元，其包括用于将输入光功率转换为辅助电门信号的光功率转换器。 辅助门单元被布置为当在多个功率开关中的一个功率开关中发生故障时，将辅助电门信号提供给仍在运行的多个功率开关中的任一个的各个门。 还提出了相应的功率模块和方法。

    Arrangement Of Stationary Batteries
    3.
    发明申请
    Arrangement Of Stationary Batteries 审中-公开
    固定电池的安排

    公开(公告)号：US20110217575A1

    公开(公告)日：2011-09-08

    申请号：US13109757

    申请日：2011-05-17

    申请人： Willy Hermansson ,  Bertil Nygren ,  Falah Hosini ,  Fredrik Tinglow ,  Jan R. Svensson

    发明人： Willy Hermansson ,  Bertil Nygren ,  Falah Hosini ,  Fredrik Tinglow ,  Jan R. Svensson

    IPC分类号： H01M2/12 ,  H01M2/10 ,  H01M10/04

    CPC分类号： H01M2/1072 ,  H01M2/1077 ,  H01M10/613 ,  H01M10/627 ,  H01M10/6563 ,  H01M10/6566 ,  H01M10/658 ,  Y10T29/49108

    摘要： A cassette for a battery stack, including a casing for a battery pack, which casing is made of a non-conducting material. The casing has a front side with an opening for receiving the battery pack. Preferably, the casing has a back side, opposite the front side, the back side being provided with electrical connections leading into the casing and arranged to connect to the poles of a battery pack when a battery pack is inserted into the casing through the front side. Arrangement of the cassettes is also provided, wherein the cassettes in the arrangement is placed in mechanical connection on top of each other.

    摘要翻译： 一种用于电池堆的盒，包括用于电池组的壳体，该壳体由非导电材料制成。 壳体具有前侧，具有用于接收电池组的开口。 优选地，壳体具有与前侧相反的后侧，后侧设有通向壳体的电连接，并且当电池组通过前侧插入到壳体中时被布置成连接到电池组的杆 。 还提供了盒的布置，其中该装置中的盒被彼此顶部放置在机械连接中。

    Modular energy storage device for a high voltage electrical power system
    6.
    发明授权
    Modular energy storage device for a high voltage electrical power system 失效
    用于高压电力系统的模块化储能装置

    公开(公告)号：US08633614B2

    公开(公告)日：2014-01-21

    申请号：US12951906

    申请日：2010-11-22

    申请人： Tomas Larsson ,  Fredrik Tinglöw ,  Georgios Demetriades ,  Willy Hermansson ,  Konstantinos Papastergiou

    发明人： Tomas Larsson ,  Fredrik Tinglöw ,  Georgios Demetriades ,  Willy Hermansson ,  Konstantinos Papastergiou

    IPC分类号： H02J1/00 ,  H01M6/42

    CPC分类号： H01M6/42 ,  H01M2/20 ,  H01M2/206 ,  H01M8/0247 ,  H01M8/2465 ,  H01M2250/10 ,  H02J7/00 ,  Y02B90/14 ,  Y10T307/685

    摘要： Storage device for a high voltage electrical power including at least two modules connected in series, each module including at least one dc power-source in a container with positive and negative terminals. The device including positive and negative poles, first and second conductors arranged to form a current path between the poles, the first conductor including a plurality of conductor parts connected to the terminals of the modules to provide a series connection, a first module of the series being connected to one of the poles, and the second conductor is connected between a last module in the series and the other pole, wherein the conductors are arranged to pass through the containers in parallel such that a current flows through the first conductor in a first direction and through the second conductor in an opposite second direction.

    摘要翻译： 用于包括串联连接的至少两个模块的高压电力的存储装置，每个模块包括具有正和负端子的容器中的至少一个直流电源。 所述装置包括正极和负极，第一和第二导体布置成在极之间形成电流路径，第一导体包括连接到模块的端子以提供串联连接的多个导体部分，该系列的第一模块 连接到一个极，并且第二导体连接在串联的最后一个模块和另一个极之间，其中导体被布置成平行地穿过容器，使得电流以第一导体流过第一导体 方向并且在相反的第二方向穿过第二导体。

    Electric circuit
    7.
    发明授权
    Electric circuit 有权
    电路

    公开(公告)号：US06278314B1

    公开(公告)日：2001-08-21

    申请号：US09206969

    申请日：1998-12-08

    申请人： Gunnar Asplund ,  Bo Danielsson ,  Willy Hermansson ,  Peter Lundberg ,  Christer Ovrén ,  Anders Åberg

    发明人： Gunnar Asplund ,  Bo Danielsson ,  Willy Hermansson ,  Peter Lundberg ,  Christer Ovrén ,  Anders Åberg

    IPC分类号： H03K1708

    CPC分类号： H02H7/1206 ,  H02M1/088 ,  H03K17/107 ,  Y02B70/1483

    摘要： An electric circuit comprises a plurality of high power switching services connected in series and adapted to be controlled to be all conducting or blocking substantially simultaneously act together as a single switch and each holding a part of a high voltage to be held by the switch in the blocking state of the switching devices. Each switching device has an avalanche diode of SiC connected in anti-parallel therewith and adapted to start to conduct current when reverse biased as of a predetermined voltage limit for preventing that the voltage across the respective switching device exceeds such limit.

    摘要翻译： 一种电路包括多个串联连接并适于被控制为全部导电或阻挡的高功率开关业务，其基本上同时作为单个开关起作用，并且每个保持一部分被开关保持的高电压 阻塞状态的开关器件。 每个开关装置具有与其并联连接的SiC的雪崩二极管，并且适于在反向偏压达到预定电压极限时开始导通电流，以防止相应的开关装置两端的电压超过这种极限。

    High voltage silicon carbide semiconductor device with bended edge
    8.
    发明授权
    High voltage silicon carbide semiconductor device with bended edge 失效
    具有弯曲边缘的高压碳化硅半导体器件

    公开(公告)号：US5914499A

    公开(公告)日：1999-06-22

    申请号：US716252

    申请日：1997-03-05

    申请人： Willy Hermansson ,  Lennart Ramberg ,  Dag Sigurd

    发明人： Willy Hermansson ,  Lennart Ramberg ,  Dag Sigurd

    IPC分类号： H01L29/73 ,  H01L21/04 ,  H01L21/265 ,  H01L21/331 ,  H01L21/76 ,  H01L29/12 ,  H01L29/16 ,  H01L29/24 ,  H01L29/74 ,  H01L29/78 ,  H01L29/861 ,  H01L31/0312 ,  H01L29/00 ,  H01L29/06

    CPC分类号： H01L21/263 ,  H01L21/0445 ,  H01L21/7602 ,  H01L29/1608 ,  H01L29/6606 ,  Y10S438/931

    摘要： The invention relates to a method in which proton or ion implantation is used for restructuring a silicon carbide region from being conductive to being resistive and wherein this implantation method is used for manufacturing a semiconductor device which comprises a p-n junction where both the p-conductive and the n-conductive layers are designed as doped layers of silicon carbide (SiC), whereby the implantation method is used for at least one of the steps passivation of a silicon carbide surface of the device with a semi-insulating layer, definition of the area of the p-n junction during manufacture, termination of the edges of the p-n junction by means of a semi-insulating layer, creation of a positive edge angle at the edge of the p-n junction, and insulation of different devices from one another during manufacture of a plurality of devices on one and the same wafer of silicon carbide, wherein the invention also relates to the implantation method proper.

    摘要翻译： PCT No.PCT / SE96 / 00034 Sec。 371日期1997年3月5日 102（e）1997年3月5日PCT PCT 1996年1月17日PCT公布。 出版物WO96 / 22610 PCT 日期：1996年7月25日本发明涉及一种方法，其中使用质子或离子注入来将碳化硅区域从导电重整为电阻，并且其中该注入方法用于制造半导体器件，该半导体器件包括pn结，其中两者 p导电层和n导电层被设计为碳化硅（SiC）的掺杂层，由此将注入方法用于至少一个步骤中钝化具有半绝缘层的器件的碳化硅表面 ，制造期间pn结的面积的定义，通过半绝缘层终止pn结的边缘，在pn结的边缘处产生正边缘角以及将不同的器件与一个绝缘体的绝缘 另一个在制造同一碳化硅晶片上的多个器件的过程中，其中本发明还涉及本发明的植入方法。