公开(公告)号：US6104043A

公开(公告)日：2000-08-15

申请号：US803380

申请日：1997-02-20

申请人： Willy Hermansson ,  Bo Bijlenga ,  Lennart Ramberg ,  Kurt Rottner ,  Lennart Zdansky ,  Christopher Ian Harris ,  Mietek Bakowski ,  Adolf Schoner ,  Nils Lundberg ,  Mikael Ostling ,  Fanny Dahlquist

发明人： Willy Hermansson ,  Bo Bijlenga ,  Lennart Ramberg ,  Kurt Rottner ,  Lennart Zdansky ,  Christopher Ian Harris ,  Mietek Bakowski ,  Adolf Schoner ,  Nils Lundberg ,  Mikael Ostling ,  Fanny Dahlquist

IPC分类号： H01L21/04 ,  H01L29/24 ,  H01L29/872 ,  H01L31/0312 ,  H01L27/095 ,  H01L29/74

CPC分类号： H01L29/1608 ,  H01L29/6606 ,  H01L29/872

摘要： A Schottky diode of SiC has a substrate layer, a drift layer and emitter layer regions formed in the drift layer. A metal layer makes an ohmic contact to the emitter layer regions and Schottky contact to the drift layer. A depletion of the drift layer region between two adjacent emitter layer regions is allowed in the blocking state of the diode making the two adjacent p-type emitter layer regions form a continuous depleted region therebetween in this state.

摘要翻译： SiC的肖特基二极管具有在漂移层中形成的衬底层，漂移层和发射极层区域。 金属层与发射极层区域发生欧姆接触，并与漂移层进行肖特基接触。 在二极管的阻断状态下允许两个相邻发射极层区域之间的漂移层区域的耗尽，使得在该状态下两个相邻的p型发射极层区域之间形成连续的耗尽区域。

公开(公告)号：US5902117A

公开(公告)日：1999-05-11

申请号：US859844

申请日：1997-05-21

申请人： Kurt Rottner ,  Adolf Schoner ,  Mietek Bakowski

发明人： Kurt Rottner ,  Adolf Schoner ,  Mietek Bakowski

IPC分类号： H01L21/04 ,  H01L29/24 ,  H01L29/861 ,  H01L21/00 ,  H01L23/58

CPC分类号： H01L29/1608 ,  H01L29/6606 ,  H01L29/861 ,  Y10S438/931

摘要： A pn-diode of SiC has a first emitter layer part doped with first dopants having a low ionization energy and a second part designed as a grid and having portions extending vertically from above and past the junction between the drift layer and the first part and being laterally separated from each other by drift layer regions for forming a pn-junction by the first part and the drift layer adjacent such portions at a vertical distance from a lower end of the grid portions. The different parameters of the device are selected to allow a depletion of the drift layer in the blocking state form a continuous depleted region between the grid portions, to thereby screen off the high electric field at the pn-junction so that it will not be exposed to high electrical fields.

摘要翻译： SiC的pn二极管具有掺杂有低电离能的第一掺杂剂的第一发射极层部分和被设计为栅极的第二部分，并且具有从上方垂直延伸并且穿过漂移层和第一部分之间的结的部分，并且 通过用于由第一部分形成pn结的漂移层区域和与栅极部分的下端垂直距离的这些部分相邻的漂移层横向分开。 选择器件的不同参数以允许在阻挡状态下漂移层的耗尽在栅格部分之间形成连续的耗尽区，从而屏蔽pn结处的高电场，使其不会暴露 到高电场。

公开(公告)号：US5759263A

公开(公告)日：1998-06-02

申请号：US759417

申请日：1996-12-05

申请人： Nils Nordell ,  Adolf Schoner

发明人： Nils Nordell ,  Adolf Schoner

IPC分类号： C23C16/46 ,  C30B25/10 ,  C23C16/00

CPC分类号： C30B25/10 ,  C23C16/46

摘要： A device for epitaxially growing objects by Chemical Vapour Deposition on a substrate (1) comprises a susceptor (4) having a room (6) for receiving the substrate and means (9) for heating the susceptor and thereby the substrate and a gas mixture to be fed to the substrate for said growth. The substrate is arranged close to a first susceptor wall part (7) at least partially delimiting said room. Said heating means is arranged to heat the susceptor to a higher temperature of at least a second wall part (5) delimiting said room thereof and located substantially opposite to said first wall part than the temperature of the first wall part for obtaining a temperature gradient from said second wall part to the substrate and radiative heating thereof by said second wall part. (FIG. 1).

摘要翻译： 用于通过化学气相沉积在衬底（1）上外延生长物体的装置包括具有用于接收衬底的房间（6）的基座（4）和用于加热基座，从而将衬底和气体混合物 被供给到用于所述生长的底物。 衬底布置成靠近至少部分地限定所述房间的第一感受器壁部分（7）。 所述加热装置被布置成将基座加热到限定所述室的至少第二壁部分（5）的较高温度，并且与第一壁部分的温度基本上相对于第一壁部分位于第一壁部分的温度上，以获得温度梯度 所述第二壁部分到所述基底并且由所述第二壁部分进行辐射加热。 （图。1）。

公开(公告)号：US5705406A

公开(公告)日：1998-01-06

申请号：US636969

申请日：1996-04-24

申请人： Kurt Rottner ,  Adolf Schoner ,  Nils Nordell

发明人： Kurt Rottner ,  Adolf Schoner ,  Nils Nordell

IPC分类号： H01L21/04 ,  H01L21/74 ,  H01L29/24 ,  H01L29/808 ,  H01L21/22

CPC分类号： H01L29/1608 ,  H01L21/046 ,  H01L21/74 ,  H01L29/66068 ,  H01L29/8083 ,  Y10S438/931

摘要： A method for producing a semiconductor device having semiconductor layers of SiC with at least three doped layers on top of each other, comprises the steps of growing a first semiconductor layer of SiC; implanting an impurity dopant into the first layer to form a second doped surface layer as a sub-layer therein, the second doped surface layer being surrounded, except for the top surface thereof, by the first semiconductor layer; and epitaxially growing a third semiconductor layer of SiC on top of the second layer of SiC and regions of the first layer adjacent thereto to totally bury the second semiconductor layer. The impurity dopant implanted into the first semiconductor layer is of a first conductivity n or p type, and the first semiconductor layer being doped with a second, opposite conductivity type, so as to form a pn-junction at the interface between the first and second layers.

摘要翻译： 一种用于制造半导体器件的方法，所述半导体器件具有在其顶部具有至少三个掺杂层的具有SiC的半导体层的半导体器件，包括生长SiC的第一半导体层的步骤; 将杂质掺杂剂注入到第一层中以形成第二掺杂表面层作为其中的子层，第二掺杂表面层除了其顶表面之外被第一半导体层包围; 在SiC的第二层的顶部和与其相邻的第一层的区域外部生长SiC的第三半导体层，以完全埋入第二半导体层。 注入到第一半导体层中的杂质掺杂物具有第一导电性n或p型，并且第一半导体层掺杂有第二相反导电型，从而在第一和第二导电类型之间的界面处形成pn结 层。

公开(公告)号：US5674765A

公开(公告)日：1997-10-07

申请号：US636952

申请日：1996-04-24

申请人： Kurt Rottner ,  Adolf Schoner

发明人： Kurt Rottner ,  Adolf Schoner

IPC分类号： H01L29/24 ,  H01L29/45 ,  H01L21/266

CPC分类号： H01L29/1608 ,  H01L29/45 ,  Y10S438/931

摘要： A method for producing a semiconductor device comprising a step a) of implanting an impurity dopant of a first conductivity type into said semiconductor layer (1) being doped according to a second opposite conductivity type for forming a first type doped surface layer (2) surrounded, except for the top surface thereof, by second conductivity type doped regions (3) of said semiconductor layer for forming a pn-junction (4) at the interface thereto. A highly doped additional semiconductor layer (5) is grown on top of said surface layer (2) for forming a contact layer allowing a low resistance ohmic contact to be established to the device so created.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤a）：将第一导电类型的杂质掺杂剂注入到所述半导体层（1）中，所述半导体层（1）根据第二相反导电类型掺杂以形成包围的第一类型掺杂表面层（2） ，除了其顶表面之外，通过用于在其界面处形成pn结（4）的所述半导体层的第二导电类型掺杂区（3）。 高度掺杂的附加半导体层（5）生长在所述表面层（2）的顶部上，用于形成接触层，从而允许对所产生的器件建立低电阻欧姆接触。