公开(公告)号：US20110247556A1

公开(公告)日：2011-10-13

申请号：US13046565

申请日：2011-03-11

申请人： James W. Raring ,  Arpan Chakraborty ,  Mike Coulter

发明人： James W. Raring ,  Arpan Chakraborty ,  Mike Coulter

IPC分类号： C23C16/455 ,  C23C16/458

CPC分类号： C23C16/4584 ,  C23C16/45519 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/45574 ,  C23C16/45587 ,  C30B25/08 ,  C30B25/14 ,  C30B29/403 ,  C30B29/406

摘要： A system and techniques for performing deposition having a tapered horizontal growth chamber which includes a susceptor and a tapered channel flow block. A tapered chamber is formed between the susceptor and the tapered channel flow block. Gaseous species introduced are forced by the tapered channel block to flow toward the susceptor to enhance the efficiency of reactions between the gases species and a wafer on the susceptor.

摘要翻译： 一种用于执行沉积的系统和技术，其具有包括基座和锥形通道流动块的锥形水平生长室。 在基座和锥形通道流动块之间形成锥形腔。 引入的气体物质被锥形通道块迫使朝向基座流动，以提高气体物质与基座上的晶片之间的反应效率。