公开(公告)号：US20060237724A1

公开(公告)日：2006-10-26

申请号：US10907956

申请日：2005-04-22

申请人： Wen-Kuang Tsao ,  Hung-I Hsu ,  Hsiang-Hsien Chung ,  Min-Huang Chen

发明人： Wen-Kuang Tsao ,  Hung-I Hsu ,  Hsiang-Hsien Chung ,  Min-Huang Chen

IPC分类号： H01L29/76

CPC分类号： H01L29/4908

摘要： A thin film transistor including a gate, a gate insulating layer, a semiconductor layer and a soruce/drain is provided. The gate is disposed over a substrate, wherein the gate comprises at least one layer of aluminum-yttrium alloy nitride. The gate insulating layer is formed over the substrate to cover the gate. The semiconductor layer is disposed over the gate insulating layer above the gate. The source/drain is disposed over the semiconductor layer.

摘要翻译： 提供了包括栅极，栅极绝缘层，半导体层和引出/漏极的薄膜晶体管。 栅极设置在衬底上，其中栅极包括至少一层铝 - 钇合金氮化物。 栅极绝缘层形成在衬底上以覆盖栅极。 半导体层设置在栅极上方的栅绝缘层上。 源极/漏极设置在半导体层上。

公开(公告)号：US07800109B2

公开(公告)日：2010-09-21

申请号：US10907956

申请日：2005-04-22

申请人： Wen-Kuang Tsao ,  Hung-I Hsu ,  Hsiang-Hsien Chung ,  Min-Huang Chen

发明人： Wen-Kuang Tsao ,  Hung-I Hsu ,  Hsiang-Hsien Chung ,  Min-Huang Chen

IPC分类号： H01L29/76

CPC分类号： H01L29/4908

摘要： A thin film transistor including a gate, a gate insulating layer, a semiconductor layer, a source electrode and a drain electrode is provided. The gate is disposed over a substrate, wherein the gate comprises at least one layer of aluminum-yttrium alloy nitride. The gate insulating layer is formed over the substrate to cover the gate. The semiconductor layer is disposed over the gate insulating layer above the gate. The source electrode and the drain electrode are disposed over the semiconductor layer.

摘要翻译： 提供了包括栅极，栅极绝缘层，半导体层，源极和漏极的薄膜晶体管。 栅极设置在衬底上，其中栅极包括至少一层铝 - 钇合金氮化物。 栅极绝缘层形成在衬底上以覆盖栅极。 半导体层设置在栅极上方的栅绝缘层上。 源电极和漏极设置在半导体层上。