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公开(公告)号:US07865866B2
公开(公告)日:2011-01-04
申请号:US12122399
申请日:2008-05-16
申请人: Hee-Bom Kim , Min-Kyu Ji , Sun-Young Choi , Hyun-Joo Baik
发明人: Hee-Bom Kim , Min-Kyu Ji , Sun-Young Choi , Hyun-Joo Baik
IPC分类号: G06F17/50
CPC分类号: G03F1/84
摘要: A method of precisely inspecting the entire surface of a mask at a high speed in consideration of optical effects of the mask. The method includes designing a target mask layout for a pattern to be formed on a wafer, and extracting an effective mask layout using an inspection image measured from the target mask layout using an aerial image inspection apparatus as a mask inspection apparatus. The effective mask layout is input to a wafer simulation tool for calculating a wafer image to be formed on the wafer. Optical effects of the mask are detected by comparing the target mask layout with the effective mask layout.
摘要翻译: 考虑到掩模的光学效果,高速地高效地检查掩模的整个表面的方法。 该方法包括设计用于在晶片上形成的图案的目标掩模布局,以及使用使用空间图像检查装置作为掩模检查装置的从目标掩模布局测量的检查图像来提取有效掩模布局。 将有效掩模布局输入到晶片模拟工具,以计算要在晶片上形成的晶片图像。 通过将目标掩模布局与有效掩模布局进行比较来检测掩模的光学效果。
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2.
公开(公告)号:US20080288912A1
公开(公告)日:2008-11-20
申请号:US12122399
申请日:2008-05-16
申请人: Hee-Bom KIM , Min-Kyu JI , Sun-Young CHOI , Hyun-Joo BAIK
发明人: Hee-Bom KIM , Min-Kyu JI , Sun-Young CHOI , Hyun-Joo BAIK
IPC分类号: G06F17/50
CPC分类号: G03F1/84
摘要: A method of precisely inspecting the entire surface of a mask at a high speed in consideration of optical effects of the mask. The method includes designing a target mask layout for a pattern to be formed on a wafer, and extracting an effective mask layout using an inspection image measured from the target mask layout using an aerial image inspection apparatus as a mask inspection apparatus. The effective mask layout is input to a wafer simulation tool for calculating a wafer image to be formed on the wafer. Optical effects of the mask are detected by comparing the target mask layout with the effective mask layout.
摘要翻译: 考虑到掩模的光学效果,高速地高效地检查掩模的整个表面的方法。 该方法包括设计用于在晶片上形成的图案的目标掩模布局,以及使用使用空间图像检查装置作为掩模检查装置的从目标掩模布局测量的检查图像来提取有效掩模布局。 将有效掩模布局输入到晶片模拟工具,以计算要在晶片上形成的晶片图像。 通过将目标掩模布局与有效掩模布局进行比较来检测掩模的光学效果。
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