公开(公告)号：US20110108415A1

公开(公告)日：2011-05-12

申请号：US12938797

申请日：2010-11-03

Applicant: UIHYOUNG LEE ,  Namseog Kim ,  WoonHo Seo ,  Min-Suk Han ,  YoungHyun Ju ,  Ju-il Choi

Inventor： UIHYOUNG LEE ,  Namseog Kim ,  WoonHo Seo ,  Min-Suk Han ,  YoungHyun Ju ,  Ju-il Choi

IPC: C25D17/00

CPC classification number: C25D17/005 ,  C25D17/001 ,  C25D17/008 ,  C25D17/02 ,  C25D21/10

Abstract: An apparatus for electroplating a substrate includes a substrate supporting member that supports the substrate such that a plating surface of the substrate faces upwardly, an anode electrode disposed at an upper part of the substrate supporting member, a power source for applying a voltage to the anode electrode and the substrate, and a plating solution supply member for supplying a plating solution onto the substrate.

Abstract translation: 一种用于电镀衬底的设备包括：衬底支撑构件，其支撑衬底，使得衬底的电镀表面朝上，设置在衬底支撑构件的上部的阳极，用于向阳极施加电压的电源 电极和基板，以及用于将电镀液供给到基板上的电镀液供给部件。

公开(公告)号：US5395795A

公开(公告)日：1995-03-07

申请号：US80053

申请日：1993-06-22

Applicant: Jung-In Hong ,  Je-Sung Hwang ,  Min-Suk Han

Inventor： Jung-In Hong ,  Je-Sung Hwang ,  Min-Suk Han

IPC: H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L21/441

CPC classification number: H01L21/76843 ,  H01L21/76855

Abstract: A process for forming a barrier metal layer and a metal layer on the surface of a contact hole formed on a semiconductor substrate. A titanium and a first titanium nitride layers are sequentially deposited on the surface of the contact hole and annealed, and thereafter, a second titanium nitride layer is deposited on the first titanium nitride layer and annealed, to thereby form a barrier metal layer. A first aluminum layer alloyed with silicon and copper of a given quantity, and a second aluminum layer alloyed with copper of a given quantity, are sequentially deposited on the barrier metal layer, and thereafter performed, the annealing process is performed. A third aluminum layer alloyed with copper of a given quantity is deposited on the second aluminum layer and annealed, to thereby form a metal layer. Accordingly, a leakage current is considerably reduced due to preventions of a silicon extraction phenomenon and an aluminum spike phenomenon, and a contact resistance is reduced and a step coverage is improved by effectively burying the contact hole through the above process, to thereby obtain a reliable semiconductor device.

Abstract translation: 在半导体基板上形成的接触孔的表面上形成阻挡金属层和金属层的工序。 将钛和第一氮化钛层依次沉积在接触孔的表面上并退火，然后在第一氮化钛层上沉积第二氮化钛层并进行退火，从而形成阻挡金属层。 将与给定量的硅和铜合金的第一铝层和与给定量的铜合金化的第二铝层依次沉积在阻挡金属层上，然后进行退火处理。 将与给定量的铜合金化的第三铝层沉积在第二铝层上并退火，从而形成金属层。 因此，由于硅提取现象和铝尖峰现象的防止，泄漏电流显着降低，并且通过上述过程有效地埋入接触孔，降低了接触电阻并提高了台阶覆盖率，从而获得可靠的 半导体器件。