公开(公告)号：US08026592B2

公开(公告)日：2011-09-27

申请号：US12408369

申请日：2009-03-20

Applicant: Minseung Yoon ,  Namseog Kim ,  Pyoungwan Kim ,  Keumhee Ma ,  Chajea Jo

Inventor： Minseung Yoon ,  Namseog Kim ,  Pyoungwan Kim ,  Keumhee Ma ,  Chajea Jo

IPC: H01L23/04

CPC classification number: H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05557 ,  H01L2224/06181 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/014 ,  H01L2924/00

Abstract: Through-Silicon-Via (TSV) structures can include a conductive via through a substrate extending from an upper surface of the substrate to a backside surface of the substrate opposite the upper surface, a conductive protective layer including Ni and/or Co can be at a bottom of the conductive via, and a separate polymer insulating layer can be on the backside surface of the substrate in contact with the conductive protective layer.

Abstract translation: 通过硅 - 通（TSV）结构可以包括通过从衬底的上表面延伸到衬底的与上表面相对的背面的衬底的导电通孔，包括Ni和/或Co的导电保护层可以在 导电通孔的底部和单独的聚合物绝缘层可以在与导电保护层接触的基板的背面上。

公开(公告)号：US08324733B2

公开(公告)日：2012-12-04

申请号：US12728683

申请日：2010-03-22

Applicant: In Young Lee ,  Donghyeon Jang ,  Namseog Kim

Inventor： In Young Lee ,  Donghyeon Jang ,  Namseog Kim

IPC: H01L23/538 ,  H01L25/065 ,  H01L23/48

CPC classification number: H01L24/73 ,  H01L21/76898 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L25/18 ,  H01L2224/02166 ,  H01L2224/02372 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/0557 ,  H01L2224/0603 ,  H01L2224/06505 ,  H01L2224/13009 ,  H01L2224/1403 ,  H01L2224/14505 ,  H01L2224/16145 ,  H01L2224/17051 ,  H01L2224/17505 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48227 ,  H01L2224/73207 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/05042 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/32145 ,  H01L2224/48145 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/05552

Abstract: A semiconductor device and a method for fabricating the same, wherein a portion of a substrate comprising a pad is removed to form a via hole. An insulating layer is formed on the substrate. A portion of the insulating layer is removed to form a plurality of openings exposing portions of the pad. A through electrode is formed to fill the via hole and to be electrically connected to the pad through one of the plurality of openings. A portion of the pad is exposed by another opening among the plurality of openings.

Abstract translation: 一种半导体器件及其制造方法，其中去除包括衬垫的衬底的一部分以形成通孔。 在基板上形成绝缘层。 去除绝缘层的一部分以形成露出焊盘部分的多个开口。 形成贯通电极以填充通孔并且通过多个开口中的一个电连接到焊盘。 垫的一部分由多个开口中的另一个开口暴露。

公开(公告)号：US20110318917A1

公开(公告)日：2011-12-29

申请号：US13163284

申请日：2011-06-17

Applicant: Minseung Yoon ,  Namseog Kim ,  Pyoungwan Kim ,  Keumhee Ma ,  Chajea Jo

Inventor： Minseung Yoon ,  Namseog Kim ,  Pyoungwan Kim ,  Keumhee Ma ,  Chajea Jo

IPC: H01L21/768

CPC classification number: H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05557 ,  H01L2224/06181 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/014 ,  H01L2924/00

Abstract: Through-Silicon-Via (TSV) structures can be provided by forming a conductive via through a substrate extending from an upper surface of the substrate to a backside surface of the substrate, that is opposite the upper surface, and having a conductive protective layer comprising Ni and/or Co formed at a bottom of the conductive via. A polymer insulating layer can be formed on the backside surface that is separate from the substrate and in contact with the conductive protective layer.

Abstract translation: 可以通过从衬底的上表面延伸到基板的与该上表面相对的背面表面延伸的衬底形成导电通孔，并且具有导电保护层，该导电保护层包括 Ni和/或Co形成在导电通孔的底部。 聚合物绝缘层可以形成在与基板分离并与导电保护层接触的背面上。

公开(公告)号：US20110108415A1

公开(公告)日：2011-05-12

申请号：US12938797

申请日：2010-11-03

Applicant: UIHYOUNG LEE ,  Namseog Kim ,  WoonHo Seo ,  Min-Suk Han ,  YoungHyun Ju ,  Ju-il Choi

Inventor： UIHYOUNG LEE ,  Namseog Kim ,  WoonHo Seo ,  Min-Suk Han ,  YoungHyun Ju ,  Ju-il Choi

IPC: C25D17/00

CPC classification number: C25D17/005 ,  C25D17/001 ,  C25D17/008 ,  C25D17/02 ,  C25D21/10

Abstract: An apparatus for electroplating a substrate includes a substrate supporting member that supports the substrate such that a plating surface of the substrate faces upwardly, an anode electrode disposed at an upper part of the substrate supporting member, a power source for applying a voltage to the anode electrode and the substrate, and a plating solution supply member for supplying a plating solution onto the substrate.

Abstract translation: 一种用于电镀衬底的设备包括：衬底支撑构件，其支撑衬底，使得衬底的电镀表面朝上，设置在衬底支撑构件的上部的阳极，用于向阳极施加电压的电源 电极和基板，以及用于将电镀液供给到基板上的电镀液供给部件。

公开(公告)号：US20100252935A1

公开(公告)日：2010-10-07

申请号：US12728683

申请日：2010-03-22

Applicant: In Young Lee ,  Donghyeon Jang ,  Namseog Kim

Inventor： In Young Lee ,  Donghyeon Jang ,  Namseog Kim

IPC: H01L23/538 ,  H01L25/065 ,  H01L23/48

CPC classification number: H01L24/73 ,  H01L21/76898 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L25/18 ,  H01L2224/02166 ,  H01L2224/02372 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/0557 ,  H01L2224/0603 ,  H01L2224/06505 ,  H01L2224/13009 ,  H01L2224/1403 ,  H01L2224/14505 ,  H01L2224/16145 ,  H01L2224/17051 ,  H01L2224/17505 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48227 ,  H01L2224/73207 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/05042 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/32145 ,  H01L2224/48145 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/05552

Abstract: Provided are a semiconductor device and a method for fabricating the same according to an embodiment. In the method, a portion of a substrate comprising a pad is removed to form a via hole. An insulating layer is formed on the substrate. A portion of the insulating layer is removed to form an opening part comprising a plurality of openings exposing portions of the pad. A through electrode is formed to fill the via hole and to be electrically connected to the pad through one of the plurality of openings. A portion of the pad is exposed by another opening among the plurality of openings.

Abstract translation: 提供根据实施例的半导体器件及其制造方法。 在该方法中，去除包括衬垫的衬底的一部分以形成通孔。 在基板上形成绝缘层。 去除绝缘层的一部分以形成包括露出焊盘部分的多个开口的开口部分。 形成贯通电极以填充通孔并且通过多个开口中的一个电连接到焊盘。 垫的一部分由多个开口中的另一个开口暴露。

公开(公告)号：US20100038800A1

公开(公告)日：2010-02-18

申请号：US12408369

申请日：2009-03-20

Applicant: Minseung Yoon ,  Namseog Kim ,  Pyoungwan Kim ,  Keumhee Ma ,  Chajea Jo

Inventor： Minseung Yoon ,  Namseog Kim ,  Pyoungwan Kim ,  Keumhee Ma ,  Chajea Jo

IPC: H01L23/48 ,  H01L21/768

CPC classification number: H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05557 ,  H01L2224/06181 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/014 ,  H01L2924/00

Abstract: Through-Silicon-Via (TSV) structures can include a conductive via through a substrate extending from an upper surface of the substrate to a backside surface of the substrate opposite the upper surface, a conductive protective layer including Ni and/or Co can be at a bottom of the conductive via, and a separate polymer insulating layer can be on the backside surface of the substrate in contact with the conductive protective layer.

Abstract translation: 通过硅 - 通（TSV）结构可以包括通过从衬底的上表面延伸到衬底的与上表面相对的背面的衬底的导电通孔，包括Ni和/或Co的导电保护层可以在 导电通孔的底部和单独的聚合物绝缘层可以在与导电保护层接触的基板的背面上。