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1.发明申请ELECTROSTATIC DISCHARGE CIRCUIT USING INDUCTOR-TRIGGERED SILICON-CONTROLLED RECTIFIER 有权使用电感触发式硅控制整流器的静电放电电路公开(公告)号：US20110207409A1
公开(公告)日：2011-08-25
申请号：US12711302
申请日：2010-02-24
申请人： Ming-Do KER , Chun-Yu LIN
发明人： Ming-Do KER , Chun-Yu LIN
CPC分类号： H01L27/0262
摘要： A representative electrostatic discharge (ESD) protection circuit includes a silicon-controlled rectifier comprising an alternating arrangement of a first P-type semiconductor material, a first N-type semiconductor material, a second P-type semiconductor material and a second N-type semiconductor material electrically coupled between an anode and a cathode. The anode is electrically coupled to the first P-type semiconductor material and the cathode is electrically coupled to the second N-type semiconductor material. The ESD protection circuit further includes an inductor electrically coupled between the anode and the second P-type semiconductor material or between the cathode and the first N-type semiconductor material.
摘要翻译： 代表性静电放电（ESD）保护电路包括可控硅整流器，其包括第一P型半导体材料，第一N型半导体材料，第二P型半导体材料和第二N型半导体材料的交替布置 电耦合在阳极和阴极之间的材料。 阳极电耦合到第一P型半导体材料，并且阴极电耦合到第二N型半导体材料。 ESD保护电路还包括电耦合在阳极和第二P型半导体材料之间或在阴极和第一N型半导体材料之间的电感器。
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2.发明授权Electrostatic discharge circuit using inductor-triggered silicon-controlled rectifier 有权使用电感触发硅控整流器的静电放电电路公开(公告)号：US08952456B2
公开(公告)日：2015-02-10
申请号：US12711302
申请日：2010-02-24
申请人： Ming-Do Ker , Chun-Yu Lin
发明人： Ming-Do Ker , Chun-Yu Lin
CPC分类号： H01L27/0262
摘要： A representative electrostatic discharge (ESD) protection circuit includes a silicon-controlled rectifier comprising an alternating arrangement of a first P-type semiconductor material, a first N-type semiconductor material, a second P-type semiconductor material and a second N-type semiconductor material electrically coupled between an anode and a cathode. The anode is electrically coupled to the first P-type semiconductor material and the cathode is electrically coupled to the second N-type semiconductor material. The ESD protection circuit further includes an inductor electrically coupled between the anode and the second P-type semiconductor material or between the cathode and the first N-type semiconductor material.
摘要翻译： 代表性静电放电（ESD）保护电路包括可控硅整流器，其包括第一P型半导体材料，第一N型半导体材料，第二P型半导体材料和第二N型半导体材料的交替布置 电耦合在阳极和阴极之间的材料。 阳极电耦合到第一P型半导体材料，并且阴极电耦合到第二N型半导体材料。 ESD保护电路还包括电耦合在阳极和第二P型半导体材料之间或在阴极和第一N型半导体材料之间的电感器。
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