ELECTROSTATIC DISCHARGE CIRCUIT USING INDUCTOR-TRIGGERED SILICON-CONTROLLED RECTIFIER
    1.
    发明申请
    ELECTROSTATIC DISCHARGE CIRCUIT USING INDUCTOR-TRIGGERED SILICON-CONTROLLED RECTIFIER 有权
    使用电感触发式硅控制整流器的静电放电电路

    公开(公告)号:US20110207409A1

    公开(公告)日:2011-08-25

    申请号:US12711302

    申请日:2010-02-24

    CPC classification number: H01L27/0262

    Abstract: A representative electrostatic discharge (ESD) protection circuit includes a silicon-controlled rectifier comprising an alternating arrangement of a first P-type semiconductor material, a first N-type semiconductor material, a second P-type semiconductor material and a second N-type semiconductor material electrically coupled between an anode and a cathode. The anode is electrically coupled to the first P-type semiconductor material and the cathode is electrically coupled to the second N-type semiconductor material. The ESD protection circuit further includes an inductor electrically coupled between the anode and the second P-type semiconductor material or between the cathode and the first N-type semiconductor material.

    Abstract translation: 代表性静电放电(ESD)保护电路包括可控硅整流器,其包括第一P型半导体材料,第一N型半导体材料,第二P型半导体材料和第二N型半导体材料的交替布置 电耦合在阳极和阴极之间的材料。 阳极电耦合到第一P型半导体材料,并且阴极电耦合到第二N型半导体材料。 ESD保护电路还包括电耦合在阳极和第二P型半导体材料之间或在阴极和第一N型半导体材料之间的电感器。

    IC, CIRCUITRY, AND RF BIST SYSTEM
    2.
    发明申请
    IC, CIRCUITRY, AND RF BIST SYSTEM 有权
    IC,电路和RF BIST系统

    公开(公告)号:US20130021048A1

    公开(公告)日:2013-01-24

    申请号:US13480969

    申请日:2012-05-25

    CPC classification number: G01R31/2822 G01R31/2884

    Abstract: An IC, a circuitry, and an RF BIST system are provided. The RF BIST system includes a test equipment, a module circuitry, and an IC. The IC is arranged to communicate with the module circuitry by an RF signal in response to a command signal from the test equipment, determine a test result by the RF signal, and report the test result to the test equipment, wherein the module circuitry is external to the IC and the test equipment.

    Abstract translation: 提供IC,电路和RF BIST系统。 RF BIST系统包括测试设备,模块电路和IC。 IC被布置为响应于来自测试设备的命令信号通过RF信号与模块电路通信,通过RF信号确定测试结果,并将测试结果报告给测试设备,其中模块电路是外部的 到IC和测试设备。

    OPTICAL FIBER CONNECTOR HAVING STRENGTHENING UNIT
    3.
    发明申请
    OPTICAL FIBER CONNECTOR HAVING STRENGTHENING UNIT 失效
    具有加强单元的光纤连接器

    公开(公告)号:US20110069930A1

    公开(公告)日:2011-03-24

    申请号:US12749468

    申请日:2010-03-29

    Applicant: Chun-Yu LIN

    Inventor: Chun-Yu LIN

    CPC classification number: G02B6/32 G02B6/3845 G02B6/3853 G02B6/3885 G02B6/389

    Abstract: An optical fiber connector includes a shell, a lens and a strengthening unit. The shell includes a blind hole extended along a first direction for receiving a fiber and a through hole communicated with the blind hole and extended along a second direction perpendicular to the first direction. The lens is formed on the shell to align with a bottom of the blind hole. The lens is capable of optically coupling with the fiber in the blind hole. The strengthening unit is formed in the through hole.

    Abstract translation: 光纤连接器包括壳体,透镜和加强单元。 壳体包括沿着第一方向延伸的用于容纳纤维的盲孔和与盲孔相通并沿着垂直于第一方向的第二方向延伸的通孔。 透镜形成在壳体上以与盲孔的底部对准。 透镜能够与盲孔中的光纤光学耦合。 加强单元形成在通孔中。

    LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    4.
    发明申请
    LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    发光装置及其制造方法

    公开(公告)号:US20130334551A1

    公开(公告)日:2013-12-19

    申请号:US13517830

    申请日:2012-06-14

    Abstract: A light-emitting device comprising: a substrate having a first surface and a second surface, wherein the second surface is opposite to the first surface; a semiconductor structure formed on the first surface of the substrate, comprising a first type semiconductor layer, an active layer and a second type semiconductor layer; and an isolation region separating at least the active layer into a first part and a second part, wherein the first part is capable of generating the electromagnetic radiation, and the second part comprises a breakdown diode.

    Abstract translation: 1.一种发光装置,包括:具有第一表面和第二表面的基板,其中所述第二表面与所述第一表面相对; 形成在所述基板的第一表面上的半导体结构,包括第一类型半导体层,有源层和第二类型半导体层; 以及至少将有源层分为第一部分和第二部分的隔离区域,其中第一部分能够产生电磁辐射,第二部分包括击穿二极管。

    ESD PROTECTION CIRCUIT
    5.
    发明申请
    ESD PROTECTION CIRCUIT 有权
    ESD保护电路

    公开(公告)号:US20130163127A1

    公开(公告)日:2013-06-27

    申请号:US13337463

    申请日:2011-12-27

    CPC classification number: H02H9/046 H01L27/0288

    Abstract: An electrostatic discharge protection circuit includes an input node coupled to receive an input signal and an output node coupled to output the input signal to an internal circuit. A first inductor is coupled to the input node and to the output node, and a second inductor is coupled to the output node and to a first power supply node through a resistance. A plurality of protection devices are coupled to the first and second inductors and are disposed in parallel with each other.

    Abstract translation: 静电放电保护电路包括耦合以接收输入信号的输入节点和被耦合以将输入信号输出到内部电路的输出节点。 第一电感器耦合到输入节点和输出节点,第二电感器通过电阻耦合到输出节点和第一电源节点。 多个保护装置耦合到第一和第二电感器并且彼此平行地设置。

    ESD PROTECTION FOR RF CIRCUITS
    7.
    发明申请
    ESD PROTECTION FOR RF CIRCUITS 有权
    射频电路的ESD保护

    公开(公告)号:US20120099228A1

    公开(公告)日:2012-04-26

    申请号:US12908064

    申请日:2010-10-20

    Abstract: An electrostatic discharge (ESD) circuit, adaptive to a radio frequency (RF) device, which includes a RF circuit coupled between a VDD power rail and a VSS power rail and having a RF I/O pad, includes an ESD clamp circuit coupled between a VDD power rail node and the VSS power rail node and a LC-tank structure coupled between the VDD power rail node and the VSS power rail node and to the RF I/O pad. The LC-tank structure includes a first ESD block between the VDD power rail node and the RF I/O pad, and a second ESD block between the VSS power rail node and the RF I/O pad. At least one of the first and second ESD blocks includes a pair of diodes coupled in parallel with each other and an inductor coupled in series with one of the pair of diodes.

    Abstract translation: 适用于射频(RF)装置的静电放电(ESD)电路,其包括耦合在VDD电源轨和VSS电源轨之间并具有RF I / O焊盘的RF电路,包括耦合在 VDD电源轨节点和VSS电源轨节点以及耦合在VDD电源轨节点和VSS电源轨节点之间以及RF I / O焊盘的LC槽结构。 LC槽结构包括VDD电源轨节点和RF I / O焊盘之间的第一个ESD模块,以及VSS电源轨节点和RF I / O焊盘之间的第二个ESD模块。 第一和第二ESD块中的至少一个包括彼此并联耦合的一对二极管和与一对二极管中的一个串联耦合的电感器。

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