Abstract:
A representative electrostatic discharge (ESD) protection circuit includes a silicon-controlled rectifier comprising an alternating arrangement of a first P-type semiconductor material, a first N-type semiconductor material, a second P-type semiconductor material and a second N-type semiconductor material electrically coupled between an anode and a cathode. The anode is electrically coupled to the first P-type semiconductor material and the cathode is electrically coupled to the second N-type semiconductor material. The ESD protection circuit further includes an inductor electrically coupled between the anode and the second P-type semiconductor material or between the cathode and the first N-type semiconductor material.
Abstract:
An IC, a circuitry, and an RF BIST system are provided. The RF BIST system includes a test equipment, a module circuitry, and an IC. The IC is arranged to communicate with the module circuitry by an RF signal in response to a command signal from the test equipment, determine a test result by the RF signal, and report the test result to the test equipment, wherein the module circuitry is external to the IC and the test equipment.
Abstract:
An optical fiber connector includes a shell, a lens and a strengthening unit. The shell includes a blind hole extended along a first direction for receiving a fiber and a through hole communicated with the blind hole and extended along a second direction perpendicular to the first direction. The lens is formed on the shell to align with a bottom of the blind hole. The lens is capable of optically coupling with the fiber in the blind hole. The strengthening unit is formed in the through hole.
Abstract:
A light-emitting device comprising: a substrate having a first surface and a second surface, wherein the second surface is opposite to the first surface; a semiconductor structure formed on the first surface of the substrate, comprising a first type semiconductor layer, an active layer and a second type semiconductor layer; and an isolation region separating at least the active layer into a first part and a second part, wherein the first part is capable of generating the electromagnetic radiation, and the second part comprises a breakdown diode.
Abstract:
An electrostatic discharge protection circuit includes an input node coupled to receive an input signal and an output node coupled to output the input signal to an internal circuit. A first inductor is coupled to the input node and to the output node, and a second inductor is coupled to the output node and to a first power supply node through a resistance. A plurality of protection devices are coupled to the first and second inductors and are disposed in parallel with each other.
Abstract:
A representative electrostatic discharge (ESD) protection circuit includes a silicon-controlled rectifier (SCR) that is electrically coupled to the output of a power amplifier; an ESD detection circuit that triggers the SCR responsive to detect an electrostatic discharge on an ESD bus; and an ESD clamp circuit that is coupled to the first voltage line.
Abstract:
An electrostatic discharge (ESD) circuit, adaptive to a radio frequency (RF) device, which includes a RF circuit coupled between a VDD power rail and a VSS power rail and having a RF I/O pad, includes an ESD clamp circuit coupled between a VDD power rail node and the VSS power rail node and a LC-tank structure coupled between the VDD power rail node and the VSS power rail node and to the RF I/O pad. The LC-tank structure includes a first ESD block between the VDD power rail node and the RF I/O pad, and a second ESD block between the VSS power rail node and the RF I/O pad. At least one of the first and second ESD blocks includes a pair of diodes coupled in parallel with each other and an inductor coupled in series with one of the pair of diodes.
Abstract translation:适用于射频(RF)装置的静电放电(ESD)电路,其包括耦合在VDD电源轨和VSS电源轨之间并具有RF I / O焊盘的RF电路,包括耦合在 VDD电源轨节点和VSS电源轨节点以及耦合在VDD电源轨节点和VSS电源轨节点之间以及RF I / O焊盘的LC槽结构。 LC槽结构包括VDD电源轨节点和RF I / O焊盘之间的第一个ESD模块,以及VSS电源轨节点和RF I / O焊盘之间的第二个ESD模块。 第一和第二ESD块中的至少一个包括彼此并联耦合的一对二极管和与一对二极管中的一个串联耦合的电感器。