公开(公告)号：US20050032364A1

公开(公告)日：2005-02-10

申请号：US10486794

申请日：2002-08-07

申请人： Kazuya Okubo ,  Mitsuhiro Tachinaba ,  Cheng Fang ,  Kenji Suzuki ,  Kohichi Sato ,  Hotaka Ishizuka

发明人： Kazuya Okubo ,  Mitsuhiro Tachinaba ,  Cheng Fang ,  Kenji Suzuki ,  Kohichi Sato ,  Hotaka Ishizuka

IPC分类号： C23C16/02 ,  C23C16/14 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： C23C16/45523 ,  C23C16/0281 ,  C23C16/14 ,  C23C16/4408 ,  H01L21/28556 ,  H01L21/76877

摘要： A method of forming a tungsten film, capable of restricting voids and volcanoes as large as adversely affecting characteristics despite the small diameter of a buried hole, and providing good burying characteristics. When forming a tungsten film on the surface of an object of treating (W) in a vacuumizing-enabled treating vessel (22), a reduction gas supplying process 70 and a tungsten gas supplying process 72 for supplying a tungsten-containing gas are alternately repeated with a purge process 74, for supplying an inert gas while vacuumizing, intervened therebetween to thereby form an initial tungsten film 76. Therefore, an initial tungsten film can be formed as a nucleation layer high in film thickness uniformity; and, accordingly, when main tungsten films are subsequently deposited, it is possible to restrict voids and volcanoes as large as adversely affecting characteristics despite the small diameter of a buried hole, and provide good burying characteristics.

摘要翻译： 形成钨膜的方法，其能够限制空洞和火山，尽管埋孔的直径小，但具有很大的不利影响特性，并且具有良好的埋藏特性。 在真空化处理容器（22）的处理对象（W）的表面上形成钨膜时，交替重复用于供给含钨气体的还原气体供给工序70和钨气供给工序72 吹扫工艺74，用于在抽真空时供应惰性气体，从而形成初始钨膜76.因此，可以形成初始钨膜作为膜厚均匀性高的成核层; 因此，随后沉积主钨膜时，尽管埋孔的直径很小，但可以限制大小不利地影响特性的空隙和火山，并提供良好的埋藏特性。