公开(公告)号：US07060614B2

公开(公告)日：2006-06-13

申请号：US10333963

申请日：2001-07-25

申请人： Hotaka Ishizuka ,  Tsukasa Matsuda

发明人： Hotaka Ishizuka ,  Tsukasa Matsuda

IPC分类号： H01L21/44

CPC分类号： H01L21/28568 ,  C23C16/02 ,  C23C16/0218 ,  C23C16/14 ,  H01L21/28518

摘要： In a deposition method according to the present invention, a substrate (10) is first arranged in a processing vessel to carry out a heat-up step. Then, Si-containing gas, such as SiH4 gas, is supplied into the processing vessel to carry out an initiation step serving as a pretreating step on the substrate (ST2). Then, a deposition gas is supplied into the processing vessel to carry out a deposition step (ST3). By carrying out the initiation step (ST2) by setting the partial pressure of the Si-containing gas to be not less than 50 Pa (not less than 100 Pa when the heat-up step is not carried out), it is possible to stably produce a film having a good surface condition.

摘要翻译： 在根据本发明的沉积方法中，首先将衬底（10）布置在处理容器中以执行加热步骤。 然后，将含Si的气体，例如SiH 4气体供给到处理容器中，以在基板上执行用作预处理步骤的起始步骤（ST2）。 然后，将沉积气体供给到处理容器中以进行沉积步骤（ST3）。 通过将含Si气体的分压设定为不低于50Pa（不进行加热步骤时不小于100Pa）进行启动步骤（ST2），可以 稳定地生产具有良好表面状态的膜。

公开(公告)号：US20080223455A1

公开(公告)日：2008-09-18

申请号：US12073786

申请日：2008-03-10

申请人： Jota Fukuhara ,  Hotaka Ishizuka ,  Yoshio Sugimoto ,  Yasunori Nishimura ,  Kazutoshi Itoh ,  Akihito Sugino ,  Hiroshi Tomita

发明人： Jota Fukuhara ,  Hotaka Ishizuka ,  Yoshio Sugimoto ,  Yasunori Nishimura ,  Kazutoshi Itoh ,  Akihito Sugino ,  Hiroshi Tomita

IPC分类号： F16K31/00

CPC分类号： C23C16/45557 ,  C23C16/45561 ,  Y10T137/7762 ,  Y10T137/86485

摘要： To provide a gas supply unit capable of stabilizing a gas supply amount, the gas supply unit includes a mass flow controller, a first fluid control valve connected to the mass flow controller, a second fluid control valve connected in parallel to the first fluid control valve, and a third fluid control valve placed on a secondary side of the second fluid control valve. An opening degree of the third fluid control valve is adjusted based on a pressure difference between secondary pressure of the first fluid control valve and secondary pressure of the second fluid control valve.

摘要翻译： 为了提供能够稳定气体供给量的气体供给单元，气体供给单元包括质量流量控制器，与质量流量控制器连接的第一流体控制阀，与第一流体控制阀并联连接的第二流体控制阀 以及设置在第二流体控制阀的次级侧上的第三流体控制阀。 基于第一流体控制阀的二次压力与第二流体控制阀的二次压力之间的压力差来调整第三流体控制阀的开度。

公开(公告)号：US20050032364A1

公开(公告)日：2005-02-10

申请号：US10486794

申请日：2002-08-07

申请人： Kazuya Okubo ,  Mitsuhiro Tachinaba ,  Cheng Fang ,  Kenji Suzuki ,  Kohichi Sato ,  Hotaka Ishizuka

发明人： Kazuya Okubo ,  Mitsuhiro Tachinaba ,  Cheng Fang ,  Kenji Suzuki ,  Kohichi Sato ,  Hotaka Ishizuka

IPC分类号： C23C16/02 ,  C23C16/14 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： C23C16/45523 ,  C23C16/0281 ,  C23C16/14 ,  C23C16/4408 ,  H01L21/28556 ,  H01L21/76877

摘要： A method of forming a tungsten film, capable of restricting voids and volcanoes as large as adversely affecting characteristics despite the small diameter of a buried hole, and providing good burying characteristics. When forming a tungsten film on the surface of an object of treating (W) in a vacuumizing-enabled treating vessel (22), a reduction gas supplying process 70 and a tungsten gas supplying process 72 for supplying a tungsten-containing gas are alternately repeated with a purge process 74, for supplying an inert gas while vacuumizing, intervened therebetween to thereby form an initial tungsten film 76. Therefore, an initial tungsten film can be formed as a nucleation layer high in film thickness uniformity; and, accordingly, when main tungsten films are subsequently deposited, it is possible to restrict voids and volcanoes as large as adversely affecting characteristics despite the small diameter of a buried hole, and provide good burying characteristics.

摘要翻译： 形成钨膜的方法，其能够限制空洞和火山，尽管埋孔的直径小，但具有很大的不利影响特性，并且具有良好的埋藏特性。 在真空化处理容器（22）的处理对象（W）的表面上形成钨膜时，交替重复用于供给含钨气体的还原气体供给工序70和钨气供给工序72 吹扫工艺74，用于在抽真空时供应惰性气体，从而形成初始钨膜76.因此，可以形成初始钨膜作为膜厚均匀性高的成核层; 因此，随后沉积主钨膜时，尽管埋孔的直径很小，但可以限制大小不利地影响特性的空隙和火山，并提供良好的埋藏特性。

公开(公告)号：US06465347B2

公开(公告)日：2002-10-15

申请号：US09988327

申请日：2001-11-19

申请人： Hotaka Ishizuka ,  Mitsuhiro Tachibana

发明人： Hotaka Ishizuka ,  Mitsuhiro Tachibana

IPC分类号： H01L214763

CPC分类号： H01L21/76876 ,  C23C16/0281 ,  C23C16/14 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76877 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a tungsten film is capable of forming a tungsten film having a low resistivity. The method of forming a tungsten film (50) on a surface of a workpiece by a vacuum processing system (2) comprises, in sequential steps: a seed crystal growing process for growing tungsten seed crystal grains (48) on the surface of the workpiece in an atmosphere of a film forming gas containing tungsten atoms; a boron-exposure process for exposing the workpiece to an atmosphere of a boron-containing gas for a short time; and a tungsten film forming process for forming a tungsten film by making the tungsten seed crystal grains grow in an atmosphere of a gas containing a film forming gas containing tungsten atoms, and a hydrogen-diluted boron-containing gas. The tungsten film has a low resistivity.

公开(公告)号：US07592256B2

公开(公告)日：2009-09-22

申请号：US10486794

申请日：2002-08-07

申请人： Kazuya Okubo ,  Mitsuhiro Tachibana ,  Cheng Fang ,  Kohichi Sato ,  Hotaka Ishizuka

发明人： Kazuya Okubo ,  Mitsuhiro Tachibana ,  Cheng Fang ,  Kohichi Sato ,  Hotaka Ishizuka

IPC分类号： H01L21/44

CPC分类号： C23C16/45523 ,  C23C16/0281 ,  C23C16/14 ,  C23C16/4408 ,  H01L21/28556 ,  H01L21/76877

摘要： A method of forming a tungsten film on a surface of an object to be processed in a vessel capable of being vacuumized, includes the steps of forming a tungsten film by alternately repeating a reduction gas supplying process for supplying a reduction gas and a tungsten gas supplying process for supplying a tungsten-containing gas with an intervening purge process therebetween for supplying an inert gas while vacuumizing the vessel. A reduction gas supplying period of a reduction gas supplying process among the repeated reduction gas supplying processes is set to be longer than that of the remaining reduction gas supplying processes.

摘要翻译： 在能够被真空化的容器中的待处理物体的表面上形成钨膜的方法包括以下步骤：通过交替重复用于供给还原气体的还原气体供给工序和供给钨的气体来形成钨膜 用于在含有钨的气体之间进行中间吹扫处理以在对容器抽真空的同时供应惰性气体的方法。 在反复进行的还原气体供给工序之间的还原气体供给工序的还原气体供给期间比剩余的还原气体供给工序的时间长。

公开(公告)号：US06331483B1

公开(公告)日：2001-12-18

申请号：US09459974

申请日：1999-12-14

申请人： Hotaka Ishizuka ,  Mitsuhiro Tachibana

发明人： Hotaka Ishizuka ,  Mitsuhiro Tachibana

IPC分类号： H01L214763

CPC分类号： H01L21/76876 ,  C23C16/0281 ,  C23C16/14 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76877 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a tungsten film is capable of forming a tungsten film having a low resistivity. The method of forming a tungsten film (50) on a surface of a workpiece by a vacuum processing system (2) comprises, in sequential steps: a seed crystal growing process for growing tungsten seed crystal grains (48) on the surface of the workpiece in an atmosphere of a film forming gas containing tungsten atoms; a boron-exposure process for exposing the workpiece to an atmosphere of a boron-containing gas for a short time; and a tungsten film forming process for forming a tungsten film by making the tungsten seed crystal grains grow in an atmosphere of a gas containing a film forming gas containing tungsten atoms, and a hydrogen-diluted boron-containing gas. The tungsten film has a low resistivity.

摘要翻译： 形成钨膜的方法能够形成具有低电阻率的钨膜。 通过真空处理系统（2）在工件表面上形成钨膜（50）的方法包括以下步骤：在工件表面上生长钨晶粒（48）的晶种生长工艺 在形成含有钨原子的气体的气氛中; 用于短时间将工件暴露于含硼气体的气氛的硼曝光工艺; 以及通过使钨晶粒在含有含有钨原子的成膜气体的气体的气氛中生长而形成钨膜的钨成膜工艺和氢稀释的含硼气体。 钨膜具有低电阻率。