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    PLASMA TREATMENT APPARATUS
    2.
    发明申请
    PLASMA TREATMENT APPARATUS 有权
    等离子体处理装置

    公开(公告)号：US20120298303A1

    公开(公告)日：2012-11-29

    申请号：US13524170

    申请日：2012-06-15

    申请人： Masayoshi IKEDA ,  Kiyotaka SAKAMOTO ,  Akihiro SAWADA ,  Yasumi SAGO ,  Masami HASEGAWA ,  Motozo KURITA

    发明人： Masayoshi IKEDA ,  Kiyotaka SAKAMOTO ,  Akihiro SAWADA ,  Yasumi SAGO ,  Masami HASEGAWA ,  Motozo KURITA

    IPC分类号： C23C16/505 ,  B05C9/00

    CPC分类号： H05H1/46 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32357 ,  H01J37/32669 ,  H05H2001/4667

    摘要： Provided is a plasma treatment apparatus capable of uniform substrate treatment by correction of unevenness in a plasma density distribution. The apparatus has a configuration such that a substrate is treated with plasma, and an evacuated container is provided with an annular antenna arranged around an outer periphery of the container, and is formed of a power supply container, and a process container where the substrate is placed, which communicates with an internal space of the power supply container. The plasma is generated in the power supply container by radio-frequency power supplied to the antenna. The plasma is diffused into the process container by a magnetic field of solenoid coils arranged around an outer periphery of the antenna. The inclination of the magnetic field is adjusted by an inclination adjustment means for adjusting the inclination of the solenoid coils with respect to the process substrate.

    摘要翻译： 提供一种等离子体处理装置，其能够通过校正等离子体密度分布中的不均匀性来均匀地进行基板处理。 该装置具有这样的结构，使得用等离子体处理基板，并且抽真空的容器设置有围绕容器的外周布置的环形天线，并且由电源容器和处理容器形成，其中基板是 放置，与电源容器的内部空间连通。 通过提供给天线的射频电力在电源容器中产生等离子体。 等离子体通过围绕天线的外周布置的螺线管线圈的磁场而扩散到处理容器中。 通过用于调节螺线管线圈相对于处理基板的倾斜度的倾斜调节装置来调节磁场的倾斜度。

    Vacuum Processing Apparatus, Method for Manufacturing Semiconductor Device, and System For Manufacturing Semiconductor Device
    3.
    发明申请
    Vacuum Processing Apparatus, Method for Manufacturing Semiconductor Device, and System For Manufacturing Semiconductor Device 审中-公开
    真空处理装置，半导体装置的制造方法以及制造半导体装置的系统

    公开(公告)号：US20080171435A1

    公开(公告)日：2008-07-17

    申请号：US11989319

    申请日：2006-07-25

    申请人： Takahiro Fujii ,  Yukihito Tashiro ,  Seiji Itani ,  Motozo Kurita

    发明人： Takahiro Fujii ,  Yukihito Tashiro ,  Seiji Itani ,  Motozo Kurita

    IPC分类号： H01L21/44 ,  C23C16/00

    CPC分类号： H01L21/67184 ,  C23C14/568 ,  C23C16/54 ,  H01L21/67745

    摘要： A vacuum processing apparatus including at least three transfer chambers that have transfer robot arms for transferring a substrate, one or more processing chambers connected to each of the transfer chambers; one or more substrate mounts disposed in the interior thereof; a single common vacuum chamber in which the transfer robot arms of the at least three transfer chambers are disposed in positions that allow the arms to reach the substrate mount, and which is used for handing off the substrate by the transfer robot arms between at least two transfer chambers and at least one substrate mount; and load-lock chambers connected to at least one transfer chamber.

    摘要翻译： 一种真空处理装置，包括至少三个传送室，所述传送室具有用于传送基板的传送机器人臂，连接到每个传送室的一个或多个处理室; 设置在其内部的一个或多个衬底安装件; 单个公共真空室，其中至少三个传送室的传送机械手臂设置在允许臂到达衬底安装件的位置，并且其用于通过传送机器人手臂将至少两个 传送室和至少一个基板安装座; 以及与至少一个传送室连接的装载室。