公开(公告)号：US20150122642A1

公开(公告)日：2015-05-07

申请号：US14355959

申请日：2012-04-10

申请人： Ken Okamoto ,  Tadahisa Arahori ,  Akishige Sato ,  Sachio Miyashita ,  Eiji Kusano ,  Muneaki Sakamoto

发明人： Ken Okamoto ,  Tadahisa Arahori ,  Akishige Sato ,  Sachio Miyashita ,  Eiji Kusano ,  Muneaki Sakamoto

IPC分类号： H01J37/34 ,  C23C14/34

CPC分类号： H01J37/3426 ,  C04B35/111 ,  C04B35/645 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/663 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/963 ,  C23C14/081 ,  C23C14/3414 ,  G11B5/3106 ,  G11B5/851 ,  G11B11/10586 ,  H01J37/3491 ,  H01J2237/332

摘要： A sputtering target which is made of an alumina sintered body having a purity of not less than 99.99% by mass %, a relative density of not less than 98%, and an average grain size of less than 5 μm or is made of an alumina sintered body having a purity of not less than 99.999% by mass % and a relative density of not less than 98%. A sputtered film having an excellent insulation resistance and an excellent homogeneity can be obtained by using the sputtering target.

摘要翻译： 由氧化铝烧结体制成的溅射靶，该氧化铝烧结体的纯度为99.99质量％以上，相对密度不低于98％，平均粒径小于5μm，或由氧化铝 烧结体的纯度不低于99.999质量％，相对密度不低于98％。 通过使用溅射靶，可以获得绝缘电阻优异且均匀性优异的溅射膜。