公开(公告)号：US20130099945A1

公开(公告)日：2013-04-25

申请号：US13546811

申请日：2012-07-11

申请人： Hai-Nan SHEN

发明人： Hai-Nan SHEN

IPC分类号： H03M11/00

CPC分类号： G06F3/0231

摘要： A wireless input device includes a top housing and a receiver. The top housing has an accommodating slot concavely formed thereon. The receiver has a receiving circuit module and an electrical connector arranged beneath the receiving circuit module. The electrical connector is detachably arranged in the accommodating slot. A key-shaped receiver which includes a key cap, a receiving circuit module arranged adjacent to a bottom side of the key cap, and an electrical connector electrically connected to the receiving circuit module.

摘要翻译： 无线输入设备包括顶部外壳和接收器。 顶部壳体具有凹形地形成在其上的容纳槽。 接收器具有布置在接收电路模块下方的接收电路模块和电连接器。 电连接器可拆卸地布置在容纳槽中。 一种钥匙形接收器，包括键帽，邻近键帽的底侧布置的接收电路模块以及电连接到接收电路模块的电连接器。

公开(公告)号：US08320586B2

公开(公告)日：2012-11-27

申请号：US12541383

申请日：2009-08-14

申请人： Yai-Nan Shen

发明人： Yai-Nan Shen

IPC分类号： H03G3/00 ,  H02B1/00

CPC分类号： H04R29/001 ,  H04R29/008

摘要： A system and method for reducing volume spike during switching of audio output devices of an electronic device is provided. The system and method adjusts a volume level of a first audio output device currently adopted by the electronic device for audible output to a muted level, and switches the audible output from the first audio output device to a second audio output device with the muted level. The system and method further receives a desired volume level input by a user, and adjusts the second audio output device from the muted level to the desired volume level.

摘要翻译： 提供了一种用于在切换电子设备的音频输出设备期间减小体积尖峰的系统和方法。 该系统和方法将当前由电子设备采用的第一音频输出设备的音量调节为用于声音输出到静音电平，并且将具有静音电平的第一音频输出设备的可听输出切换到第二音频输出设备。 该系统和方法进一步接收用户所期望的音量电平输入，并将第二音频输出设备从静音电平调整到所需音量级。

公开(公告)号：US20060199337A1

公开(公告)日：2006-09-07

申请号：US11306898

申请日：2006-01-16

申请人： Hsi-Ming Chang ,  Chia-Nan Shen

发明人： Hsi-Ming Chang ,  Chia-Nan Shen

IPC分类号： H01L21/84 ,  H01L21/336 ,  H01L31/00

CPC分类号： H01L21/26513 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78624

摘要： A thin film transistor includes a substrate, a polysilicon layer, a patterned gate dielectric layer, a gate layer, a channel region, a source region, a drain region, and a LDD region. The polysilicon layer is positioned over the substrate. The patterned gate dielectric layer is positioned over the polysilicon layer. The patterned gate dielectric layer has a third and a fourth portion, wherein the fourth portion has a thickness smaller than that of the third portion. The gate layer is positioned over the third portion. The source region and the drain region are positioned in the polysilicon layer under the fourth portion. The channel region is positioned in the polysilicon layer under the gate layer. The LDD region is positioned in the polysilicon layer under the third portion and is between the channel region and the source region or between the channel region and the drain region.

摘要翻译： 薄膜晶体管包括衬底，多晶硅层，图案化栅极介电层，栅极层，沟道区，源极区，漏极区和LDD区。 多晶硅层位于衬底上。 图案化的栅介质层位于多晶硅层上。 图案化的栅介质层具有第三部分和第四部分，其中第四部分的厚度小于第三部分的厚度。 栅极层位于第三部分上。 源极区域和漏极区域位于第四部分下面的多晶硅层中。 沟道区位于栅极层下面的多晶硅层中。 LDD区域位于第三部分下面的多晶硅层中，并且位于沟道区域和源极区域之间或沟道区域和漏极区域之间。

公开(公告)号：US20060105506A1

公开(公告)日：2006-05-18

申请号：US10904513

申请日：2004-11-15

申请人： Chia-Nan Shen

发明人： Chia-Nan Shen

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L29/66757 ,  H01L21/84 ,  H01L29/78621

摘要： A method of manufacturing a thin film transistor is described. A polysilicon island is formed over a substrate. A gate insulating layer is formed over the substrate to cover the polysilicin island. A gate is formed on the gate insulating layer above the polysilicon island. A passivation layer is formed over the substrate to cover the gate and the gate insulating layer. An ion implanting process is carried out to form a source/drain in the polysilicon island beside the gate, wherein a region between the source and the drain is a channel. After the first passivation layer is removed, a patterned dielectric layer is formed over the substrate, wherein the dielectric layer exposes a portion of the source/drain. A source/drain conductive layer is formed over the dielectric layer and is electrically connected to the source/drain.

摘要翻译： 描述制造薄膜晶体管的方法。 在衬底上形成多晶硅岛。 在衬底上形成栅极绝缘层以覆盖多晶硅岛。 栅极形成在多晶硅岛上方的栅极绝缘层上。 在衬底上形成钝化层以覆盖栅极和栅极绝缘层。 进行离子注入工艺以在栅极旁边的多晶硅岛中形成源极/漏极，其中源极和漏极之间的区域是沟道。 在去除第一钝化层之后，在衬底上形成图案化的介电层，其中电介质层露出源极/漏极的一部分。 源极/漏极导电层形成在电介质层上并且电连接到源极/漏极。

公开(公告)号：US08816231B2

公开(公告)日：2014-08-26

申请号：US13571994

申请日：2012-08-10

申请人： Hai-Nan Shen

发明人： Hai-Nan Shen

IPC分类号： H01H1/10

CPC分类号： H01H13/704 ,  H01H13/705 ,  H01H2221/026 ,  H01H2227/036 ,  H01H2233/03

摘要： A slim key structure includes a lower case having at least one positioning slot, a flexible membrane disposed on the lower case, an upper case dispose on the flexible membrane, a keycap and an elastic piece. The flexible membrane has a post opening corresponding to the positioning slot. The upper case has at least one hollow guiding cylinder and a central passage. The guiding cylinder is protruded upwardly and downwardly from the upper case, and the downward protruding portion of the guiding cylinder is received in the positioning slot. The keycap has at least one guiding post and a pushing stem protruding downwardly from a bottom surface thereof. The guiding post is reciprocably received in the guiding cylinder. The elastic piece is disposed between the keycap and the flexible membrane in the central passage depressable by the pushing stem against the flexible membrane.

摘要翻译： 薄型键结构包括具有至少一个定位槽的下壳体，设置在下壳体上的柔性膜，设置在柔性膜上的上壳体，键帽和弹性件。 柔性膜具有对应于定位槽的后开口。 上壳体具有至少一个中空导向圆筒和中心通道。 引导筒从上壳体向上和向下突出，并且引导筒的向下突出部分被容纳在定位槽中。 键帽具有至少一个引导柱和从其底表面向下突出的推杆。 引导柱在导向圆筒中可往复运动。 弹性件设置在键帽和柔性膜之间的中间通道中，由中间通道压靠推动杆抵靠柔性膜。

公开(公告)号：US08739377B2

公开(公告)日：2014-06-03

申请号：US12928587

申请日：2010-12-15

申请人： Wei Nan Shen

发明人： Wei Nan Shen

IPC分类号： B25B1/00 ,  B25B1/24 ,  B25B27/073

CPC分类号： B25B27/0028 ,  B25B27/062

摘要： A tool device includes a support lever having a middle screw hole and having two side open channels, a pressing member having an outer thread for engaging with the screw hole of the support lever and having a center member pivotally attached to the inner end portion for engaging with the object, and two connecting levers each having a tongue formed in an inner end portion for engaging with the bearing element to be removed and each having an outer end portion engageable into the channel of the support lever, and each having an enlarged head for anchoring the support lever to the element and the object, and for allowing the element to be pulled and removed from the object with the pressing member.

摘要翻译： 工具装置包括具有中间螺纹孔并具有两个侧面开放通道的支撑杆，具有用于与支撑杆的螺钉孔接合的外螺纹的按压构件，并且具有可枢转地附接到内端部分的中心构件，用于接合 并且每个具有形成在内端部中的舌部的两个连接杆，用于与待移除的轴承元件接合，并且每个具有可与支撑杆的通道接合的外端部，并且每个具有扩大的头部， 将支撑杆固定到元件和物体上，并且允许元件被按压构件从物体中拉出并移除。

公开(公告)号：US20120174363A1

公开(公告)日：2012-07-12

申请号：US12930430

申请日：2011-01-06

申请人： Wei nan Shen

发明人： Wei nan Shen

IPC分类号： B25B27/067 ,  B25B27/073

CPC分类号： B25B27/16 ,  B25B27/023 ,  B25B27/062

摘要： A tool device includes a lever having two screw holes, two arms each having an upper orifice for securing to the end portions of the lever, two rods attached to the arms for positioning two end ears of a housing of a universal joint to the arms, one or more screws engaged with the screw holes of the lever and adjustable relative to the lever, and each screw include a lower cavity for engaging with a stud, each stud include a tip for engaging with the slot that is formed between the end ears of the housing and for being forced to engage into the slot and to separate the end ears of the housing from each other and for allowing a bearing member to be removed from the housing.

摘要翻译： 工具装置包括具有两个螺钉孔的杆，两个臂具有用于固定到杆的端部的上孔，两个杆附接到臂上，用于将万向节的壳体的两个端耳定位到臂上， 一个或多个螺钉与杠杆的螺孔啮合并相对于杠杆可调节，并且每个螺钉包括用于与柱螺栓接合的下腔，每个螺柱包括用于与狭槽接合的末端， 壳体并且被迫接合到槽中并且将壳体的端耳彼此分离并允许将轴承构件从壳体移除。

公开(公告)号：US20110079931A1

公开(公告)日：2011-04-07

申请号：US12572220

申请日：2009-10-01

申请人： Philip Edward Miller ,  Tayyab Ishaq Suratwala ,  Jeffrey Devin Bude ,  Nan Shen ,  William Augustus Steele ,  Ted Alfred Laurence ,  Michael Dennis Feit ,  Lana Louie Wong

发明人： Philip Edward Miller ,  Tayyab Ishaq Suratwala ,  Jeffrey Devin Bude ,  Nan Shen ,  William Augustus Steele ,  Ted Alfred Laurence ,  Michael Dennis Feit ,  Lana Louie Wong

IPC分类号： B29D11/00

CPC分类号： C03C15/00 ,  B29D11/00432 ,  C03C23/007

摘要： A method for preventing damage caused by high intensity light sources to optical components includes annealing the optical component for a predetermined period. Another method includes etching the optical component in an etchant including fluoride and bi-fluoride ions. The method also includes ultrasonically agitating the etching solution during the process followed by rinsing of the optical component in a rinse bath.

摘要翻译： 用于防止由高强度光源引起的对光学部件的损害的方法包括：将光学部件退火预定时间。 另一种方法包括在包括氟化物和二氟离子的蚀刻剂中蚀刻光学部件。 该方法还包括在该过程中超声波搅拌蚀刻溶液，然后在漂洗浴中漂洗光学部件。

公开(公告)号：US20060110868A1

公开(公告)日：2006-05-25

申请号：US11023436

申请日：2004-12-29

申请人： Chia-Nan Shen ,  Cheng-Nan Hsieh ,  Po-Chih Liu

发明人： Chia-Nan Shen ,  Cheng-Nan Hsieh ,  Po-Chih Liu

IPC分类号： H01L21/84

CPC分类号： H01L29/66757 ,  H01L29/78621

摘要： A method is disclosed to make a lightly doped drain of a low-temperature poly-silicon thin film transistor. Nitrogen is implanted during steps of doping the source and the drain so as to suppress the spreading of the other types of dope so that the poly-silicon layer forms a shallow interface lightly doped drain after annealing. Implantation of nitrogen takes place before or after the other types of dope. Nitrogen is implanted to a depth no greater than that of the other types of dope. The present is simple, improves hot carrier effect and repairs flaws in the poly-silicon layer.

摘要翻译： 公开了一种制造低温多晶硅薄膜晶体管的轻掺杂漏极的方法。 在掺杂源极和漏极的步骤期间注入氮气，以抑制其它类型的掺杂物的扩散，使得多晶硅层在退火之后形成浅界面轻掺杂漏极。 在其他类型的涂料之前或之后进行氮的植入。 氮被植入到不大于其它类型的掺杂剂的深度的深度。 本发明简单，改善了热载体效应，并修复了多晶硅层的缺陷。

公开(公告)号：US07041540B1

公开(公告)日：2006-05-09

申请号：US10906041

申请日：2005-02-01

申请人： Hsi-Ming Chang ,  Chia-Nan Shen

发明人： Hsi-Ming Chang ,  Chia-Nan Shen

IPC分类号： H01L21/84

CPC分类号： H01L29/66757 ,  H01L21/26513 ,  H01L29/78621 ,  H01L29/78624

摘要： A thin film transistor includes a substrate, a polysilicon layer, a patterned gate dielectric layer, a gate layer, a channel region, a source region, a drain region, and a LDD region. The polysilicon layer is positioned over the substrate. The patterned gate dielectric layer is positioned over the polysilicon layer. The patterned gate dielectric layer has a third and a fourth portion, wherein the fourth portion has a thickness smaller than that of the third portion. The gate layer is positioned over the third portion. The source region and the drain region are positioned in the polysilicon layer under the fourth portion. The channel region is positioned in the polysilicon layer under the gate layer. The LDD region is positioned in the polysilicon layer under the third portion and is between the channel region and the source region or between the channel region and the drain region.

摘要翻译： 薄膜晶体管包括衬底，多晶硅层，图案化栅极介电层，栅极层，沟道区，源极区，漏极区和LDD区。 多晶硅层位于衬底上。 图案化的栅介质层位于多晶硅层上。 图案化的栅介质层具有第三部分和第四部分，其中第四部分的厚度小于第三部分的厚度。 栅极层位于第三部分上。 源极区域和漏极区域位于第四部分下面的多晶硅层中。 沟道区位于栅极层下面的多晶硅层中。 LDD区域位于第三部分下面的多晶硅层中，并且位于沟道区域和源极区域之间或沟道区域和漏极区域之间。