公开(公告)号：US20060110868A1

公开(公告)日：2006-05-25

申请号：US11023436

申请日：2004-12-29

申请人： Chia-Nan Shen ,  Cheng-Nan Hsieh ,  Po-Chih Liu

发明人： Chia-Nan Shen ,  Cheng-Nan Hsieh ,  Po-Chih Liu

IPC分类号： H01L21/84

CPC分类号： H01L29/66757 ,  H01L29/78621

摘要： A method is disclosed to make a lightly doped drain of a low-temperature poly-silicon thin film transistor. Nitrogen is implanted during steps of doping the source and the drain so as to suppress the spreading of the other types of dope so that the poly-silicon layer forms a shallow interface lightly doped drain after annealing. Implantation of nitrogen takes place before or after the other types of dope. Nitrogen is implanted to a depth no greater than that of the other types of dope. The present is simple, improves hot carrier effect and repairs flaws in the poly-silicon layer.

摘要翻译： 公开了一种制造低温多晶硅薄膜晶体管的轻掺杂漏极的方法。 在掺杂源极和漏极的步骤期间注入氮气，以抑制其它类型的掺杂物的扩散，使得多晶硅层在退火之后形成浅界面轻掺杂漏极。 在其他类型的涂料之前或之后进行氮的植入。 氮被植入到不大于其它类型的掺杂剂的深度的深度。 本发明简单，改善了热载体效应，并修复了多晶硅层的缺陷。

公开(公告)号：US20070004112A1

公开(公告)日：2007-01-04

申请号：US11161210

申请日：2005-07-27

申请人： Chia-Nan Shen ,  Cheng-Nan Hsieh ,  Hsi-Ming Chang

发明人： Chia-Nan Shen ,  Cheng-Nan Hsieh ,  Hsi-Ming Chang

IPC分类号： H01L21/8234

CPC分类号： H01L29/78675 ,  H01L29/66757

摘要： A method of forming a thin film transistor is described. A polysilicon layer is formed over a substrate, wherein the polysilicon layer has a first region, a second region and a channel region between the first and second regions. A nitrogen doping process is carried out to dope nitrogen into the polysilicin layer. A gate insulating layer and a gate are sequentially formed over the polysilicon layer, wherein the gate is formed over the channel region. A doping process is performed so as to form a source and a drain in the first region and second region, respectively.

摘要翻译： 描述形成薄膜晶体管的方法。 在衬底上形成多晶硅层，其中多晶硅层在第一和第二区域之间具有第一区域，第二区域和沟道区域。 进行氮掺杂工艺以将氮掺入聚硅酸层中。 栅极绝缘层和栅极依次形成在多晶硅层上，其中栅极形成在沟道区域上。 执行掺杂工艺以分别在第一区域和第二区域中形成源极和漏极。