公开(公告)号：US06624082B2

公开(公告)日：2003-09-23

申请号：US09907127

申请日：2001-07-16

申请人： Laizhong Luo ,  Ying Holden ,  Rene George ,  Robert Guerra ,  Allan Wiesnoski ,  Nicole Kuhl ,  Craig Ranft ,  Sai Mantripragada

发明人： Laizhong Luo ,  Ying Holden ,  Rene George ,  Robert Guerra ,  Allan Wiesnoski ,  Nicole Kuhl ,  Craig Ranft ,  Sai Mantripragada

IPC分类号： H01L21302

CPC分类号： H01L21/67069 ,  H01J37/3244 ,  H01J37/32633

摘要： A system and method for two-sided etch of a semiconductor substrate. Reactive species are generated and flowed toward a substrate for processing. A diverter is positioned between the generation chamber and the substrate. A portion of the reactive species flows through the diverter for processing the front of the substrate. Another portion is diverted around the substrate to the backside for processing. A flow restricter is placed between the substrate and the exhaust system to increase the residence time of reactive species adjacent to the backside.

公开(公告)号：US06335293B1

公开(公告)日：2002-01-01

申请号：US09351259

申请日：1999-07-12

申请人： Laizhong Luo ,  Ying Holden ,  Rene George ,  Robert Guerra ,  Allan Wiesnoski ,  Nicole Kuhl ,  Craig Ranft ,  Sai Mantripragada

发明人： Laizhong Luo ,  Ying Holden ,  Rene George ,  Robert Guerra ,  Allan Wiesnoski ,  Nicole Kuhl ,  Craig Ranft ,  Sai Mantripragada

IPC分类号： H01L2100

CPC分类号： H01L21/67069 ,  H01J37/3244 ,  H01J37/32633

摘要： A system and method for two-sided etch of a semiconductor substrate. Reactive species are generated and flowed toward a substrate for processing. A diverter is positioned between the generation chamber and the substrate. A portion of the reactive species flows through the diverter for processing the front of the substrate. Another portion is diverted around the substrate to the backside for processing. A flow restricter is placed between the substrate and the exhaust system to increase the residence time of reactive species adjacent to the backside.