METHOD AND APPARATUS FOR MANUFACTURING PERCHLORATE
    1.
    发明申请
    METHOD AND APPARATUS FOR MANUFACTURING PERCHLORATE 有权
    用于制造百草枯的方法和装置

    公开(公告)号:US20120020871A1

    公开(公告)日:2012-01-26

    申请号:US13260399

    申请日:2010-03-26

    IPC分类号: C01B11/18 B01J19/08

    CPC分类号: C25B1/28 C25B15/08

    摘要: The invention relates to a method of manufacturing a perchlorate including an electrolysis process (S1) in which, using an electrolysis tank (2) in which an anode section (4A) provided with an anode (4) and a cathode section (5A) provided a cathode (5) are divided by a cation exchange membrane (6), an aqueous solution of sodium chlorate is electrolytically oxidized in the anode section, a neutralization reaction process (S2) in which a substance that becomes alkaline when dissolved in water is added to the aqueous solution of perchloric acid in the anode section, which has been generated by the electrolytic oxidation, so as to synthesize a perchlorate by a neutralization reaction, and a crystallization method in which the perchlorate synthesized by the neutralization reaction process is formed into crystals, in which the crystallization method includes a crystallization method composed of three processes of an evaporation and crystallization process (S3) or an evaporation and concentration process (S21), a cooling and crystallization process (S22), and a separation process (S23).

    摘要翻译: 本发明涉及一种制造高氯酸盐的方法,包括电解方法(S1),其中使用其中设置阳极部分(4A)和阴极部分(5A)的电解槽(2) 阴极(5)被阳离子交换膜(6)分割,氯酸钠水溶液在阳极部分被电解氧化,中和反应过程(S2)中加入溶解在水中变成碱性的物质 通过电解氧化生成的阳极部中的高氯酸水溶液,通过中和反应合成高氯酸盐,将通过中和反应工序合成的高氯酸盐形成结晶的结晶法 其中结晶方法包括由蒸发和结晶过程(S3)或蒸发和浓缩的三个方法组成的结晶方法 (S21),冷却和结晶处理(S22)和分离处理(S23)。

    APPARATUS AND METHOD FOR DETERMINING CONCENTRATION OF GASEOUS COMPONENT
    2.
    发明申请
    APPARATUS AND METHOD FOR DETERMINING CONCENTRATION OF GASEOUS COMPONENT 失效
    测定气体组分浓度的装置和方法

    公开(公告)号:US20110211195A1

    公开(公告)日:2011-09-01

    申请号:US13129374

    申请日:2009-08-03

    IPC分类号: G01N21/49

    摘要: A sufficiently large light detection value can be obtained to determine a concentration of a target component in a desired section, without using a laser emitter of a high laser intensity or a large light collector. By changing an orientation of a laser emitter 3 about a horizontal axis or a height of the laser emitter 3, a laser irradiation position on a ground or water surface 5 is switched between a first irradiation position 5a and a second irradiation position 5b. A photodetector 9 detects first scattered light resulting from scattering of first laser beam at the first irradiation position 5a, second scattered light resulting from scattering of second laser beam at the first irradiation position 5a, third scattered light resulting from scattering of the first laser beam at the second irradiation position 5b, and fourth scattered light resulting from scattering of the second laser beam at the second irradiation position 5b. A concentration calculator 11 calculates a concentration of a target component between the first irradiation position 5a and the second irradiation position 5b, based on detection values of the first, second, third, and fourth scattered light obtained by the photodetector 9.

    摘要翻译: 可以获得足够大的光检测值,以在不使用高激光强度的激光发射器或大的集光器的情况下确定期望部分中的目标成分的浓度。 通过改变激光发射器3的围绕激光发射器3的水平轴或高度的取向,在第一照射位置5a和第二照射位置5b之间切换地面或水面5上的激光照射位置。 光电检测器9检测在第一照射位置5a处由第一激光束的散射产生的第一散射光,在第一照射位置5a处由第二激光束的散射产生的第二散射光,由第一激光束的散射引起的第三散射光 第二照射位置5b以及由第二激光束在第二照射位置5b的散射而产生的第四散射光。 浓度计算器11基于由光电检测器9获得的第一,第二,第三和第四散射光的检测值,计算第一照射位置5a和第二照射位置5b之间的目标成分的浓度。

    Method and apparatus for manufacturing perchlorate
    4.
    发明授权
    Method and apparatus for manufacturing perchlorate 有权
    制造高氯酸盐的方法和装置

    公开(公告)号:US09090979B2

    公开(公告)日:2015-07-28

    申请号:US13260399

    申请日:2010-03-26

    IPC分类号: C25B1/28 C25B15/08

    CPC分类号: C25B1/28 C25B15/08

    摘要: Disclosed is a method for producing perchlorate, which comprises: an electrolytic step (S1) wherein an electrolysis vessel (2), in which a positive electrode side (4A) on which a positive electrode (4) is arranged and a negative electrode side (5A) on which a negative electrode (5) is arranged are divided by a cation-exchange membrane (6), is used and an aqueous solution of sodium chlorate is electrolytically oxidized on the positive electrode side (4A) of the electrolysis vessel (2); a neutralization reaction step (S2) wherein a substance an aqueous solution of which shows alkalinity is added to the aqueous perchloric acid solution that has been produced by the electrolytic oxidation on the positive electrode side, so that perchlorate is synthesized by a neutralization reaction; and a crystallization process wherein the perchlorate synthesized by the neutralization reaction is obtained as crystals. The crystallization process is composed of an evaporative crystallization step (S3), or alternatively composed of three steps, namely an evaporative concentration step (S21), a cooling crystallization step (S22), and a separation step (S23).

    摘要翻译: 本发明提供一种高氯酸盐的制造方法,其特征在于,包括:电解工序(S1),其中配置有正极(4)的正极侧(4A)和负极侧( 5A),其中布置有负极(5)的阳离子交换膜(6)被分离,氯化钠水溶液在电解槽(2)的正极侧(4A)被电解氧化 ); 中和反应步骤(S2),其中在正极侧通过电解氧化制备的高氯酸溶液中加入显示碱度的物质的物质,从​​而通过中和反应合成高氯酸盐; 和通过中和反应合成的高氯酸盐作为结晶的结晶方法。 结晶过程由蒸发结晶步骤(S3)组成,或者由蒸发浓缩步骤(S21),冷却结晶步骤(S22)和分离步骤(S23)三个步骤组成。

    Apparatus and method for determining concentration of gaseous component
    8.
    发明授权
    Apparatus and method for determining concentration of gaseous component 失效
    用于测定气体组分浓度的装置和方法

    公开(公告)号:US08395771B2

    公开(公告)日:2013-03-12

    申请号:US13129374

    申请日:2009-08-03

    IPC分类号: G01N21/00

    摘要: A light detection value determines concentration of a target component, without using a laser emitter of high laser intensity or a large light collector. By changing orientation of the laser emitter about a horizontal axis, or height of the laser emitter, a laser irradiation position on a ground or water surface is switched between first and second irradiation positions. A photodetector detects first scattered light scattering from the first laser beam at the first irradiation position, second scattered light scattering from the second laser beam at the first irradiation position, third scattered light scattering from the first laser beam at the second irradiation position, and fourth scattered light scattering from the second laser beam at the second irradiation position. A concentration calculator calculates concentration of a target component between the first and second irradiation positions, based on detection values of the first, second, third, and fourth scattered light.

    摘要翻译: 光检测值确定目标成分的浓度,而不使用激光强度高的激光发射器或大型集光器。 通过改变激光发射器围绕水平轴的方向或激光发射器的高度,在第一和第二照射位置之间切换地面或水面上的激光照射位置。 光检测器在第一照射位置处检测来自第一激光束的第一散射光散射,在第一照射位置处从第二激光束散射第二散射光,在第二照射位置处检测来自第一激光束的第三散射光散射,以及第四散射光 在第二照射位置处来自第二激光束的散射光散射。 浓度计算器基于第一,第二,第三和第四散射光的检测值来计算第一和第二照射位置之间的目标成分的浓度。

    Bi-Sr-Ca-Cu-O superconducting thin film
    9.
    发明授权
    Bi-Sr-Ca-Cu-O superconducting thin film 失效
    Bi-Sr-Ca-Cu-O超导薄膜

    公开(公告)号:US5342826A

    公开(公告)日:1994-08-30

    申请号:US950127

    申请日:1992-09-24

    IPC分类号: H01L39/24 B32B9/00

    CPC分类号: H01L39/2458 Y10S505/701

    摘要: A Bi-Sr-Ca-Cu-O system superconducting thin film formed on a substrate comprising [110] single crystals of an ABO.sub.3 type oxide having a perovskite structure, in which a (119) face is selectively grown relative to a substrate surface. The film is formed on the substrate by chemical vapor deposition process. A method of manufacturing a BiSrCaCuO system superconducting film in which an a-axis is oriented preferentially relative to the surface of a substrate comprising MgO (100) single crystals, wherein the chemical composition ratio (Sr+Ca+Cu)/Bi of the BiSrCaCuO system superconducting film is made not less than 3.5. A Bi-Sr-Ca-Cu-O system superconducting thin film formed on a substrate comprising MgO [110] single crystals, in which a (110) face is selectively grown to the substrate surface. The film is formed on the substrate by a chemical vapor deposition process.

    摘要翻译: 在包含[110]具有钙钛矿结构的ABO 3型氧化物的单晶的衬底上形成的Bi-Sr-Ca-Cu-O系超导薄膜,其中(119)面相对于衬底表面选择性地生长。 该薄膜通过化学气相沉积工艺在基板上形成。 制造BiSrCaCuO系超导膜的方法,其中a轴相对于包含MgO(100)单晶的衬底的表面优先取向,其中BiSrCaCuO的化学组成比(Sr + Ca + Cu)/ Bi 系统超导薄膜不低于3.5。 在包含MgO [110]单晶的基板上形成的Bi-Sr-Ca-Cu-O系超导薄膜,其中(110)面选择性地生长到基板表面。 通过化学气相沉积工艺在基板上形成膜。