公开(公告)号：US20130287668A1

公开(公告)日：2013-10-31

申请号：US13979268

申请日：2012-01-16

申请人： Robert Ring ,  Noemi Banos ,  Uwe Paetzold

发明人： Robert Ring ,  Noemi Banos ,  Uwe Paetzold

IPC分类号： B01J12/00 ,  C01B33/04

CPC分类号： B01J12/00 ,  C01B33/04 ,  C01B33/1071 ,  Y02P20/129

摘要： A process for hydrogenating chlorosilanes in a reactor, wherein at least two reactant gas streams are introduced separately from one another into a reaction zone, wherein the first reactant gas stream comprising silicon tetrachloride is conducted via a first heat exchanger unit in which it is heated and is then conducted through a heating unit which heats it to a first temperature before the first reactant gas stream reaches the reaction zone, and wherein the second reactant gas stream comprising hydrogen is heated by a second heat exchanger unit to a second temperature, wherein the first temperature is greater than the second temperature, and then introduced into the reaction zone, such that the mixing temperature of the two reactant gas streams in the reaction zone is between 850° C. and 1300° C., and said reactant gas streams react to give product gases comprising trichlorosilane and hydrogen chloride, wherein the product gases obtained in the reaction are conducted through said at least two heat exchanger units and preheat the reactant gas streams of the reaction by the countercurrent principle, wherein the flow passes first through the first heat exchanger unit and then through the second heat exchanger unit. A reactor for hydrogenating chlorosilanes, comprising two gas inlet devices through which reactant gases can be introduced separately from one another into the reactor, and at least one gas outlet device through which a product gas stream can be conducted, at least two heat exchanger units which are connected to one another and which are suitable for heating reactant gases separately from one another by means of the product gases conducted through the heat exchanger units, and a heating zone which is arranged between a first heat exchanger unit and a reaction zone and in which there is at least one heating element.

摘要翻译： 一种在反应器中氢化氯硅烷的方法，其中至少两个反应物气流彼此分开引入反应区，其中包含四氯化硅的第一反应气流通过其中被加热的第一热交换器单元进行， 然后通过加热单元进行加热，该加热单元在第一反应气流到达反应区之前将其加热到第一温度，并且其中包含氢的第二反应气体流由第二热交换器单元加热到第二温度，其中第一 温度大于第二温度，然后引入反应区，使得反应区中的两个反应气流的混合温度在850℃和1300℃之间，所述反应气流与 得到包含三氯硅烷和氯化氢的产物气体，其中在反应中获得的产物气体通过所述a进行 至少两个热交换器单元并且通过逆流原理预热反应物的反应气流，其中流动首先通过第一热交换器单元然后通过第二热交换器单元。 用于氢化氯硅烷的反应器，包括两个气体入口装置，反应物气体可以通过该反应气体彼此分开引入反应器，以及至少一个气体出口装置，通过该气体出口装置可以传导产物气流;至少两个热交换器单元， 彼此连接并且适于通过通过热交换器单元传导的产物气体彼此分开地加热反应气体;以及加热区，其布置在第一热交换器单元和反应区之间，其中 至少有一个加热元件。

公开(公告)号：US20110133314A1

公开(公告)日：2011-06-09

申请号：US12939324

申请日：2010-11-04

申请人： Georg Pietsch ,  Walter Haeckl ,  Juergen Schwandner ,  Noemi Banos

发明人： Georg Pietsch ,  Walter Haeckl ,  Juergen Schwandner ,  Noemi Banos

IPC分类号： H01L29/30 ,  H01L21/20

CPC分类号： H01L21/02024 ,  C30B15/04 ,  C30B29/06 ,  C30B33/00

摘要： A method for producing a semiconductor wafer includes pulling a single crystal of semiconductor material, slicing a semiconductor wafer from the single crystal and polishing the semiconductor wafer with the polishing pad and polishing agent. The polishing agent is free of solid materials having abrasive action and the polishing pad contains fixedly bonded solid materials with abrasive action. During polishing the polishing agent is supplied in a gap between the semiconductor wafer and polishing pad. The polishing agent has a pH value in a range of 9.5 to 12.5.

摘要翻译： 一种制造半导体晶片的方法，包括拉制半导体材料的单晶，从单晶切割半导体晶片，并用抛光垫和抛光剂研磨半导体晶片。 抛光剂不含具有研磨作用的固体材料，抛光垫包含具有研磨作用的固定粘结固体材料。 在抛光期间，在半导体晶片和抛光垫之间的间隙中提供抛光剂。 抛光剂的pH值在9.5至12.5的范围内。

公开(公告)号：US09480959B2

公开(公告)日：2016-11-01

申请号：US13979268

申请日：2012-01-16

申请人： Robert Ring ,  Noemi Banos ,  Uwe Paetzold

发明人： Robert Ring ,  Noemi Banos ,  Uwe Paetzold

IPC分类号： C01B33/08 ,  B01J12/00 ,  C01B33/107 ,  C01B33/04

CPC分类号： B01J12/00 ,  C01B33/04 ,  C01B33/1071 ,  Y02P20/129

摘要： A process for hydrogenating chlorosilanes in a reactor, wherein at least two reactant gas streams are introduced separately from one another into a reaction zone, wherein the first reactant gas stream comprising silicon tetrachloride is conducted via a first heat exchanger unit in which it is heated and is then conducted through a heating unit which heats it to a first temperature before the first reactant gas stream reaches the reaction zone, and wherein the second reactant gas stream comprising hydrogen is heated by a second heat exchanger unit to a second temperature, wherein the first temperature is greater than the second temperature, and then introduced into the reaction zone, such that the mixing temperature of the two reactant gas streams in the reaction zone is between 850° C. and 1300° C., and said reactant gas streams react to give product gases comprising trichlorosilane and hydrogen chloride, wherein the product gases obtained in the reaction are conducted through said at least two heat exchanger units and preheat the reactant gas streams of the reaction by the countercurrent principle, wherein the flow passes first through the first heat exchanger unit and then through the second heat exchanger unit. A reactor for hydrogenating chlorosilanes, comprising two gas inlet devices through which reactant gases can be introduced separately from one another into the reactor, and at least one gas outlet device through which a product gas stream can be conducted, at least two heat exchanger units which are connected to one another and which are suitable for heating reactant gases separately from one another by means of the product gases conducted through the heat exchanger units, and a heating zone which is arranged between a first heat exchanger unit and a reaction zone and in which there is at least one heating element.

摘要翻译： 一种在反应器中氢化氯硅烷的方法，其中至少两个反应物气流彼此分开引入反应区，其中包含四氯化硅的第一反应气流通过其中被加热的第一热交换器单元进行， 然后通过加热单元进行加热，该加热单元在第一反应气流到达反应区之前将其加热到第一温度，并且其中包含氢的第二反应气体流由第二热交换器单元加热到第二温度，其中第一 温度大于第二温度，然后引入反应区，使得反应区中的两个反应气流的混合温度在850℃和1300℃之间，所述反应气流与 得到包含三氯硅烷和氯化氢的产物气体，其中在反应中获得的产物气体通过所述a进行 至少两个热交换器单元并且通过逆流原理预热反应物的反应气流，其中流动首先通过第一热交换器单元然后通过第二热交换器单元。 用于氢化氯硅烷的反应器，包括两个气体入口装置，反应物气体可以通过该反应气体彼此分开引入反应器，以及至少一个气体出口装置，通过该气体出口装置可以传导产物气流;至少两个热交换器单元， 彼此连接并且适于通过通过热交换器单元传导的产物气体彼此分开地加热反应气体;以及加热区，其布置在第一热交换器单元和反应区之间，其中 至少有一个加热元件。