公开(公告)号：US4223243A

公开(公告)日：1980-09-16

申请号：US37256

申请日：1979-05-09

申请人： David W. Oliver ,  Norman T. Lavoo

发明人： David W. Oliver ,  Norman T. Lavoo

IPC分类号： H01J19/42 ,  H01J19/70 ,  H01J23/02 ,  H01J1/88

CPC分类号： H01J19/70 ,  H01J19/42 ,  H01J23/02

摘要： The variety of technologies that have been applied in the development of aonded grid cathode are described. These include chemical vapor deposition of tungsten, molybdenum, iridium BN, and Si.sub.3 N.sub.4 on both sides of a sintered tungsten cathode disk. Zirconium and titanium getters have been used to eliminate nitrogen evolution problems. The getter plates are also used as heat shields for the bonded heater. Films of Si.sub.3 N.sub.4 have been added to the insulation to prevent calcium and barium diffusion into the layer and maintain adequate resistivity and breakdown strength. Plasma etching was introduced as a method of removing Si.sub.3 N.sub.4 from the cathode pores.A new method, erosion lithography, is used for making the fine-detail grid structure, combining air erosion and lithographic techniques.

摘要翻译： 描述了已经应用于开发粘合栅极阴极的各种技术。 这些包括在烧结钨阴极盘的两侧上的钨，钼，铱BN和Si 3 N 4的化学气相沉积。 已经使用锆和钛吸气剂来消除氮的进化问题。 吸气板也用作粘合加热器的隔热罩。 已经将Si3N4薄膜添加到绝缘层中，以防止钙和钡扩散到层中并保持足够的电阻率和击穿强度。 引入等离子体蚀刻作为从阴极孔除去Si 3 N 4的方法。 一种新的侵蚀光刻方法，用于制作精细细节的栅格结构，结合风蚀和光刻技术。