公开(公告)号：US06429103B1

公开(公告)日：2002-08-06

申请号：US09548791

申请日：2000-04-13

申请人： Eric Shanks Johnson ,  Nyles Wynn Cody

发明人： Eric Shanks Johnson ,  Nyles Wynn Cody

IPC分类号： H01L21265

CPC分类号： H01L29/66446 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/02546 ,  Y10S438/93

摘要： A method of fabricating an Emode HIGFET semiconductor device, and the device, is disclosed including epitaxially growing by metal-organic chemical vapor deposition an epitaxial buffer. The buffer includes a layer of short-lifetime gallium arsenide on a gallium arsenide substrate and a layer of aluminum gallium arsenide on the layer of short-lifetime gallium arsenide. The short-lifetime gallium arsenide is grown at a temperature below approximately 550° C. so as to have a lifetime less than approximately 500 picoseconds. A stack of compound semiconductor layers is then epitaxially grown on the layer of aluminum gallium arsenide of the buffer and an Emode field effect transistor is formed in the stack.

摘要翻译： 公开了一种制造Emode HIGFET半导体器件的方法，该器件包括通过金属 - 有机化学气相沉积外延生长外延缓冲器。 该缓冲器包括在砷化镓衬底上的短寿命砷化镓层和在短寿命砷化镓层上的一层砷化铝镓。 短寿命砷化镓在低于约550℃的温度下生长，使其寿命小于约500皮秒。 然后在缓冲器的铝镓砷化物层上外延生长堆叠的化合物半导体层，并且在堆叠中形成发光二极管场效应晶体管。