公开(公告)号：USRE43725E1

公开(公告)日：2012-10-09

申请号：US11432793

申请日：2006-05-11

申请人： David Todd Emerson ,  Amber Christine Abare ,  Michael John Bergmann

发明人： David Todd Emerson ,  Amber Christine Abare ,  Michael John Bergmann

IPC分类号： H01L21/00

CPC分类号： H01L33/04 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32 ,  Y10S438/93

摘要： A light emitting diode is disclosed. The diode includes a silicon carbide substrate having a first conductivity type, a first gallium nitride layer above the SiC substrate having the same conductivity type as the substrate, a superlattice on the GaN layer formed of a plurality of repeating sets of alternating layers selected from among GaN, InGaN, and AlInGaN, a second GaN layer on the superlattice having the same conductivity type as the first GaN layer, a multiple quantum well on the second GaN layer, a third GaN layer on the multiple quantum well, a contact structure on the third GaN layer having the opposite conductivity type from the substrate and the first GaN layer, an ohmic contact to the SiC substrate, and an ohmic contact to the contact structure.

摘要翻译： 公开了一种发光二极管。 二极管包括具有第一导电类型的碳化硅衬底，在SiC衬底之上的与衬底具有相同导电类型的第一氮化镓层，在由多个重复的交替层组成的GaN层上形成的超晶格， GaN，InGaN和AlInGaN，具有与第一GaN层相同的导电类型的超晶格上的第二GaN层，第二GaN层上的多量子阱，多量子阱上的第三GaN层， 与衬底和第一GaN层具有相反导电类型的第三GaN层，与SiC衬底的欧姆接触以及与接触结构的欧姆接触。

公开(公告)号：US08129615B2

公开(公告)日：2012-03-06

申请号：US12009505

申请日：2008-01-18

申请人： Wladyslaw Walukiewicz ,  Kin Man Yu ,  Junqiao Wu

发明人： Wladyslaw Walukiewicz ,  Kin Man Yu ,  Junqiao Wu

IPC分类号： H01L31/0264

CPC分类号： H01L31/03046 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/1832 ,  H01L31/1844 ,  Y02E10/544 ,  Y10S438/93

摘要： The highly mismatched alloy Zn1-yMnyOxTe1-x, 0≦y

摘要翻译： 已经使用氧离子注入和脉冲激光熔化的组合合成了高度不匹配的合金Zn1-yMnyOxTe1-x，0＆nlE; y <1和0

公开(公告)号：US20110143517A1

公开(公告)日：2011-06-16

申请号：US13027912

申请日：2011-02-15

申请人： Robert Beach ,  Paul Bridger

发明人： Robert Beach ,  Paul Bridger

IPC分类号： H01L21/761 ,  H01L21/762

CPC分类号： H01L29/66462 ,  H01L21/76 ,  H01L21/7605 ,  H01L21/76264 ,  H01L21/76289 ,  H01L29/2003 ,  Y10S438/93

摘要： III-nitride materials are used to form isolation structures in high voltage ICs to isolate low voltage and high voltage functions on a monolithic power IC. Critical performance parameters are improved using III-nitride materials, due to the improved breakdown performance and thermal performance available in III-nitride semiconductor materials. An isolation structure may include a dielectric layer that is epitaxially grown using a III-nitride material to provide a simplified manufacturing process. The process permits the use of planar manufacturing technology to avoid additional manufacturing costs. High voltage power ICs have improved performance in a smaller package in comparison to corresponding silicon structures.

摘要翻译： III族氮化物材料用于在高电压IC中形成隔离结构，以隔离单片电源IC上的低电压和高电压功能。 由于III族氮化物半导体材料的击穿性能和热性能的改善，使用III族氮化物材料改善了关键性能参数。 隔离结构可以包括使用III族氮化物材料外延生长以提供简化的制造工艺的电介质层。 该过程允许使用平面制造技术来避免额外的制造成本。 与相应的硅结构相比，高压功率IC在较小的封装中具有改进的性能。

公开(公告)号：US20060194347A1

公开(公告)日：2006-08-31

申请号：US11328227

申请日：2006-01-10

申请人： Bum Kim ,  Young Kim ,  Young Shin

发明人： Bum Kim ,  Young Kim ,  Young Shin

IPC分类号： H01L21/00

CPC分类号： C23C16/45551 ,  C23C16/45529 ,  C30B25/02 ,  C30B29/68 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  Y10S438/93

摘要： The invention provides a method for fabricating a superlattice semiconductor structure capable of achieving excellent interfacial properties and uniformity. For the superlattice semiconductor structure according to the invention, a substrate is mounted on a susceptor within a process chamber. First and second source gases are supplied simultaneously to two different areas on the susceptor within the chamber to form first and second source gas areas separate from each other. The susceptor is rotated to revolve the substrate through the first and second source gas areas.

摘要翻译： 本发明提供一种制造能够实现优异的界面性能和均匀性的超晶格半导体结构的方法。 对于根据本发明的超晶格半导体结构，衬底安装在处理室内的基座上。 第一和第二源气体被同时供应到腔室内的基座上的两个不同区域，以形成彼此分离的第一和第二源气体区域。 基座被旋转以使基板旋转通过第一和第二源气体区域。

公开(公告)号：US07067339B2

公开(公告)日：2006-06-27

申请号：US11144565

申请日：2005-06-03

申请人： Goshi Biwa ,  Hiroyuki Okuyama

发明人： Goshi Biwa ,  Hiroyuki Okuyama

IPC分类号： H01L21/00

CPC分类号： H01L33/24 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/06 ,  Y10S438/93 ,  Y10S438/974

摘要： At the time of selective growth of an active layer on a substrate, crystal is previously grown in an active layer non-growth region, and the active layer is grown in an active layer selective growth region. With this configuration, a source supplied to the non-growth region is incorporated in the deposited crystal from the initial stage of growth, so that the supplied amount of the source to the active layer selective growth region is kept nearly at a constant value over the entire period of growth of the active layer, to eliminate degradation of characteristics of the device due to a variation in growth rate of the active layer. In particular, the selective growth method is effective in fabrication of a semiconductor light emitting device including a cladding layer, a guide layer, and an active layer, each of which is formed by selective growth, wherein the active layer has multiple quantum wells.

公开(公告)号：US06734033B2

公开(公告)日：2004-05-11

申请号：US10458051

申请日：2003-06-10

申请人： David Todd Emerson ,  Amber Christine Abare ,  Michael John Bergmann

发明人： David Todd Emerson ,  Amber Christine Abare ,  Michael John Bergmann

IPC分类号： H01L2100

CPC分类号： H01L33/04 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32 ,  Y10S438/93

摘要： A light emitting diode is disclosed. The diode includes a silicon carbide substrate having a first conductivity type, a first gallium nitride layer above the SiC substrate having the same conductivity type as the substrate, a superlattice on the GaN layer formed of a plurality of repeating sets of alternating layers selected from among GaN, InGaN, and AlInGaN, a second GaN layer on the superlattice having the same conductivity type as the first GaN layer, a multiple quantum well on the second GaN layer, a third GaN layer on the multiple quantum well, a contact structure on the third GaN layer having the opposite conductivity type from the substrate and the first GaN layer, an ohmic contact to the SiC substrate, and an ohmic contact to the contact structure.

摘要翻译： 公开了一种发光二极管。 二极管包括具有第一导电类型的碳化硅衬底，在SiC衬底之上的与衬底具有相同导电类型的第一氮化镓层，在由多个重复的交替层组成的GaN层上形成的超晶格， GaN，InGaN和AlInGaN，具有与第一GaN层相同的导电类型的超晶格上的第二GaN层，第二GaN层上的多量子阱，多量子阱上的第三GaN层， 与衬底和第一GaN层具有相反导电类型的第三GaN层，与SiC衬底的欧姆接触以及与接触结构的欧姆接触。

公开(公告)号：US06664560B2

公开(公告)日：2003-12-16

申请号：US10170577

申请日：2002-06-12

申请人： David Todd Emerson ,  Amber Christine Abare ,  Michael John Bergmann

发明人： David Todd Emerson ,  Amber Christine Abare ,  Michael John Bergmann

IPC分类号： H01L2906

CPC分类号： H01L33/04 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32 ,  Y10S438/93

摘要： A light emitting diode is disclosed. The diode includes a silicon carbide substrate having a first conductivity type, a first gallium nitride layer above the SiC substrate having the same conductivity type as the substrate, a superlattice on the GaN layer formed of a plurality of repeating sets of alternating layers selected from among GaN, InGaN, and AlInGaN, a second GaN layer on the superlattice having the same conductivity type as the first GaN layer, a multiple quantum well on the second GaN layer, a third GaN layer on the multiple quantum well, a contact structure on the third GaN layer having the opposite conductivity type from the substrate and the first GaN layer, an ohmic contact to the SiC substrate, and an ohmic contact to the contact structure.

摘要翻译： 公开了一种发光二极管。 二极管包括具有第一导电类型的碳化硅衬底，在SiC衬底之上的与衬底具有相同导电类型的第一氮化镓层，在由多个重复的交替层组成的GaN层上形成的超晶格， GaN，InGaN和AlInGaN，具有与第一GaN层相同的导电类型的超晶格上的第二GaN层，第二GaN层上的多量子阱，多量子阱上的第三GaN层， 与衬底和第一GaN层具有相反导电类型的第三GaN层，与SiC衬底的欧姆接触以及与接触结构的欧姆接触。

公开(公告)号：US20020106873A1

公开(公告)日：2002-08-08

申请号：US10026506

申请日：2001-12-18

发明人： Markus E. Beck ,  Rommel Noufi

IPC分类号： H01L021/20

CPC分类号： H01L31/0749 ,  C23C14/185 ,  C23C14/5866 ,  H01L31/0322 ,  Y02E10/541 ,  Y02P70/521 ,  Y10S438/93

摘要： A two-stage method of producing thin-films of group IB-IIIA-VIA on a substrate for semiconductor device applications includes a first stage of depositing an amorphous group IB-IIIA-VIA precursor onto an unheated substrate, wherein the precursor contains all of the group IB and group IIIA constituents of the semiconductor thin-film to be produced in the stoichiometric amounts desired for the final product, and a second stage which involves subjecting the precursor to a short thermal treatment at 420null C.-550null C. in a vacuum or under an inert atmosphere to produce a single-phase, group IB-IIIA-VIA film. Preferably the precursor also comprises the group VIA element in the stoichiometric amount desired for the final semiconductor thin-film. The group IB-IIIA-VIA semiconductor films may be, for example, Cu(In,Ga)(Se,S)2 mixed-metal chalcogenides. The resultant supported group IB-IIIA-VIA semiconductor film is suitable for use in photovoltaic applications.

摘要翻译： 在用于半导体器件应用的衬底上制造IB-IIIA-VIA族薄膜的两级方法包括将非晶IB-IIIA-VIA族前体沉积到未加热的衬底上的第一阶段，其中前体包含全部 要以最终产品所需的化学计量量生产的半导体薄膜的IB族和IIIA族组分，以及涉及在420℃-550℃下进行短热处理的第二阶段。 在真空中或在惰性气氛下制备单相IB-IIIA-VIA膜。 优选地，前体还包含最终半导体薄膜所需化学计量的VIA族元素。 IB-IIIA-VIA族半导体膜可以是例如Cu（In，Ga）（Se，S）2混合金属硫族化物。 所得支持的IB-IIIA-VIA族半导体膜适用于光伏应用。

公开(公告)号：US06235615B1

公开(公告)日：2001-05-22

申请号：US09504302

申请日：2000-02-15

申请人： Long N. Dinh ,  William McLean, II ,  Mehdi Balooch ,  Edward J. Fehring, Jr. ,  Marcus A. Schildbach

发明人： Long N. Dinh ,  William McLean, II ,  Mehdi Balooch ,  Edward J. Fehring, Jr. ,  Marcus A. Schildbach

IPC分类号： H01L2120

CPC分类号： C23C14/08 ,  C23C14/28 ,  Y10S117/904 ,  Y10S438/93

摘要： Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500° C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

摘要翻译： 产生低功函数，通过激光烧蚀稳定复合薄膜。 可以通过同时激光烧蚀硅来合成具有低功函数的复合薄膜，并将碱金属热蒸发到氧气环境中。 例如，化合物薄膜可以由Si / Cs / O组成。 可以通过改变硅/碱金属/氧比例来改变薄膜的功函数。 通过紫外光电子能谱（UPS）证实沉积在硅衬底上的复合薄膜的低功函数。 通过X射线光电子能谱（XPS）测量，复合薄膜可稳定至高达500℃。 测试确定了对于化合物薄膜的某些化学组成和退火温度，检测到负电子亲和力（NEA）。 低功函数，稳定的复合薄膜可用于太阳能电池，场致发射平板显示器，电子枪和冷阴极电子枪。

公开(公告)号：US5998304A

公开(公告)日：1999-12-07

申请号：US922186

申请日：1997-09-02

申请人： Mau-Phon Houng ,  Yeong-Her Wang ,  Chien-Jung Huang

发明人： Mau-Phon Houng ,  Yeong-Her Wang ,  Chien-Jung Huang

IPC分类号： H01L21/316 ,  H01L21/8252

CPC分类号： H01L21/316 ,  Y10S438/905 ,  Y10S438/906 ,  Y10S438/93 ,  Y10S438/933

摘要： A liquid phase deposition method involves the use of a supersaturated hydrofluosilicic acid aqueous solution for growing a silicon dioxide film at low temperature (30.degree. C.-50.degree. C.) on a III-V semiconductor, such as a gallium arsenide substrate. The silicon dioxide film may be used in a bipolar transistor or as a field oxide of MOS (metal oxide semiconductor). The III-V semiconductor substrate is chemically treated with an alkaline aqueous solution such as ammonium hydroxide so that the surface of the III-V semiconductor substrate is modified to facilitate the growth of the silicon dioxide film by liquid phase deposition. The growth rate of the silicon dioxide film is as fast as 1265 .ANG./hr. The silicon dioxide film has a refractive index ranging between 1.372 and 1.41.

摘要翻译： 液相沉积方法涉及使用过饱和的氢氟硅酸水溶液，用于在III-V半导体如砷化镓衬底上在低温（30℃-50℃）下生长二氧化硅膜。 二氧化硅膜可以用在双极晶体管中或作为MOS（金属氧化物半导体）的场氧化物。 III-V族半导体衬底用碱性水溶液如氢氧化铵进行化学处理，使得III-V族半导体衬底的表面被改性，以利于通过液相沉积生长二氧化硅膜。 二氧化硅膜的生长速度与1265安培/小时一样快。 二氧化硅膜的折射率在1.372和1.41之间。