公开(公告)号：US20090304994A1

公开(公告)日：2009-12-10

申请号：US12454906

申请日：2009-05-26

申请人： Erich Daub ,  Hans Oelkrug ,  Oliver Schmelmer

发明人： Erich Daub ,  Hans Oelkrug ,  Oliver Schmelmer

IPC分类号： B32B9/04 ,  H01L21/20

CPC分类号： C30B29/06 ,  C30B15/36 ,  C30B25/02 ,  H01L21/02008 ,  H01L21/02027 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/02609 ,  Y10T428/24355

摘要： An epitaxially coated silicon wafer comprises a plane surface misoriented relative to a {110} crystal plane, wherein the direction of the single silicon crystal is tilted away by the angle θ from the normal to the wafer surface and the projection of the tilted direction forms an angle φ with the direction in the wafer, and θ is given by 0≦θ≦3° and 45°≦φ≦90°, as well as for all symmetrically equivalent directions.

摘要翻译： 外延涂覆的硅晶片包括相对于{110}晶面的取向不平衡的平面，其中单晶硅的<110>方向与晶片表面的法线倾斜角度θ和倾斜的 ＆lt; 110＆gt;方向在晶片中形成方向<-110>的角度φ，θ由0 <θθ= 3°和45°<= phi <= 90°给出，以及对于所有对称等效 方向。

公开(公告)号：US08133318B2

公开(公告)日：2012-03-13

申请号：US12454906

申请日：2009-05-26

申请人： Erich Daub ,  Hans Oelkrug ,  Oliver Schmelmer

发明人： Erich Daub ,  Hans Oelkrug ,  Oliver Schmelmer

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12

CPC分类号： C30B29/06 ,  C30B15/36 ,  C30B25/02 ,  H01L21/02008 ,  H01L21/02027 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/02609 ,  Y10T428/24355

摘要： An epitaxially coated silicon wafer comprises a plane surface misoriented relative to a {110} crystal plane, wherein the direction of the single silicon crystal is tilted away by the angle θ from the normal to the wafer surface and the projection of the tilted direction forms an angle φ with the direction in the wafer, and θ is given by 0≦θ≦3° and 45°≦φ≦90°, as well as for all symmetrically equivalent directions.

摘要翻译： 外延涂覆的硅晶片包括相对于{110}晶面取向取向的平面，其中单晶硅的<110>方向倾斜角度＆amp;θ; 从正常到晶片表面和倾斜<110>方向的投影形成一个角度＆ 在晶圆方向<-110>和＆thetas; 由0＆nlE;＆thetas;＆nlE; 3°和45°＆nlE;＆phgr;＆nlE; 90°，以及所有对称等效方向。