公开(公告)号：US20090304994A1

公开(公告)日：2009-12-10

申请号：US12454906

申请日：2009-05-26

申请人： Erich Daub ,  Hans Oelkrug ,  Oliver Schmelmer

发明人： Erich Daub ,  Hans Oelkrug ,  Oliver Schmelmer

IPC分类号： B32B9/04 ,  H01L21/20

CPC分类号： C30B29/06 ,  C30B15/36 ,  C30B25/02 ,  H01L21/02008 ,  H01L21/02027 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/02609 ,  Y10T428/24355

摘要： An epitaxially coated silicon wafer comprises a plane surface misoriented relative to a {110} crystal plane, wherein the direction of the single silicon crystal is tilted away by the angle θ from the normal to the wafer surface and the projection of the tilted direction forms an angle φ with the direction in the wafer, and θ is given by 0≦θ≦3° and 45°≦φ≦90°, as well as for all symmetrically equivalent directions.

摘要翻译： 外延涂覆的硅晶片包括相对于{110}晶面的取向不平衡的平面，其中单晶硅的<110>方向与晶片表面的法线倾斜角度θ和倾斜的 ＆lt; 110＆gt;方向在晶片中形成方向<-110>的角度φ，θ由0 <θθ= 3°和45°<= phi <= 90°给出，以及对于所有对称等效 方向。

公开(公告)号：US08133318B2

公开(公告)日：2012-03-13

申请号：US12454906

申请日：2009-05-26

申请人： Erich Daub ,  Hans Oelkrug ,  Oliver Schmelmer

发明人： Erich Daub ,  Hans Oelkrug ,  Oliver Schmelmer

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12

CPC分类号： C30B29/06 ,  C30B15/36 ,  C30B25/02 ,  H01L21/02008 ,  H01L21/02027 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/02609 ,  Y10T428/24355

摘要： An epitaxially coated silicon wafer comprises a plane surface misoriented relative to a {110} crystal plane, wherein the direction of the single silicon crystal is tilted away by the angle θ from the normal to the wafer surface and the projection of the tilted direction forms an angle φ with the direction in the wafer, and θ is given by 0≦θ≦3° and 45°≦φ≦90°, as well as for all symmetrically equivalent directions.

摘要翻译： 外延涂覆的硅晶片包括相对于{110}晶面取向取向的平面，其中单晶硅的<110>方向倾斜角度＆amp;θ; 从正常到晶片表面和倾斜<110>方向的投影形成一个角度＆ 在晶圆方向<-110>和＆thetas; 由0＆nlE;＆thetas;＆nlE; 3°和45°＆nlE;＆phgr;＆nlE; 90°，以及所有对称等效方向。

公开(公告)号：US20120098100A1

公开(公告)日：2012-04-26

申请号：US13274456

申请日：2011-10-17

申请人： Erich Daub ,  Raimund Kaiss ,  Michael Kloesler ,  Thomas Loch

发明人： Erich Daub ,  Raimund Kaiss ,  Michael Kloesler ,  Thomas Loch

IPC分类号： H01L29/36 ,  F27D5/00

CPC分类号： H01L21/68735 ,  C30B29/06 ,  C30B33/02 ,  H01L21/3225 ,  Y10T117/10 ,  Y10T117/1016

摘要： A support ring for supporting a monocrystalline silicon semiconductor wafer during a thermal treatment of the semiconductor wafer has outer and inner lateral surfaces and a curved surface extending from the outer lateral surface to the inner lateral surface, this curved surface serving for the placement of the semiconductor wafer. The curved surface has a radius of curvature of not less than 6000 mm and not more than 9000 mm for 300 mm diameter wafers, or a radius of curvature of not less than 9000 mm and not more than 14,000 mm for 450 mm diameter wafers. Use of the support ring during thermal treatment reduces slip and improves wafer nanotopography.

摘要翻译： 用于在半导体晶片的热处理期间支撑单晶硅半导体晶片的支撑环具有外表面和内侧表面以及从外侧表面延伸到内侧表面的弯曲表面，该弯曲表面用于放置半导体 晶圆。 对于300mm直径的晶片，曲面的曲率半径不小于6000mm，不大于9000mm，对于450mm直径的晶片，曲面的曲率半径不小于9000mm且不大于14,000mm。 热处理期间支撑环的使用减少了滑移并改善了晶片的纳米形貌。

公开(公告)号：US08460465B2

公开(公告)日：2013-06-11

申请号：US13274456

申请日：2011-10-17

申请人： Erich Daub ,  Raimund Kaiss ,  Michael Kloesler ,  Thomas Loch

发明人： Erich Daub ,  Raimund Kaiss ,  Michael Kloesler ,  Thomas Loch

IPC分类号： C30B35/00 ,  H01L21/00

CPC分类号： H01L21/68735 ,  C30B29/06 ,  C30B33/02 ,  H01L21/3225 ,  Y10T117/10 ,  Y10T117/1016

摘要： A support ring for supporting a monocrystalline silicon semiconductor wafer during a thermal treatment of the semiconductor wafer has outer and inner lateral surfaces and a curved surface extending from the outer lateral surface to the inner lateral surface, this curved surface serving for the placement of the semiconductor wafer. The curved surface has a radius of curvature of not less than 6000 mm and not more than 9000 mm for 300 mm diameter wafers, or a radius of curvature of not less than 9000 mm and not more than 14,000 mm for 450 mm diameter wafers. Use of the support ring during thermal treatment reduces slip and improves wafer nanotopography.

摘要翻译： 用于在半导体晶片的热处理期间支撑单晶硅半导体晶片的支撑环具有外表面和内侧表面以及从外侧表面延伸到内侧表面的弯曲表面，该弯曲表面用于放置半导体 晶圆。 对于300mm直径的晶片，曲面的曲率半径不小于6000mm，不大于9000mm，对于450mm直径的晶片，曲面的曲率半径不小于9000mm且不大于14,000mm。 热处理期间支撑环的使用减少了滑移并改善了晶片的纳米形貌。

公开(公告)号：US07828893B2

公开(公告)日：2010-11-09

申请号：US11386855

申请日：2006-03-22

申请人： Timo Mueller ,  Wilfried von Ammon ,  Erich Daub ,  Peter Krottenthaler ,  Klaus Messmann ,  Friedrich Passek ,  Reinhold Wahlich ,  Arnold Kuehhorn ,  Johannes Studener

发明人： Timo Mueller ,  Wilfried von Ammon ,  Erich Daub ,  Peter Krottenthaler ,  Klaus Messmann ,  Friedrich Passek ,  Reinhold Wahlich ,  Arnold Kuehhorn ,  Johannes Studener

IPC分类号： C30B15/10

CPC分类号： C30B31/14 ,  C30B25/12 ,  C30B29/06 ,  C30B33/02 ,  Y10T117/1052 ,  Y10T117/1068

摘要： A silicon wafer having no epitaxially deposited layer or layer produced by joining to the silicon wafer, with a nitrogen concentration of 1·1013-8·1014 atoms/cm3, an oxygen concentration of 5.2·1017-7.5·1017 atoms/cm3, a central thickness BMD density of 3·108-2·1010 cm−3, a cumulative length of linear slippages ≦3 cm and a cumulative area of areal slippage regions ≦7 cm2, the front surface having 0.13 μm LSE in the DNN channel, a layer at least 5 μm thick, in which ≦1·104 COPs/cm3 with a size of ≧0.09 μm occur, and a BMD-free layer ≧5 μm thick. Such wafers may be produced by heat treating the silicon wafer, resting on a substrate holder, a specific substrate holder used depending on the wafer doping. For each holder, maximum heating rates are selected to avoid formation of slippages.

摘要翻译： 不具有通过与硅晶片接合而产生的外延沉积层或层的硅晶片，氮浓度为1×1013-8.1014原子/ cm3，氧浓度为5.2×1017〜7.5×1017原子/ cm3，a 中心厚度BMD密度为3·108-2·1010cm-3，线性滑移的累积长度为3cm，面积滑移区域的累积面积为7cm 2，前表面具有<45个氮诱导缺陷 DNN通道中的>0.13μmLSE，厚度至少为5μm的层，其中发生尺寸为≥0.09μm的nlE; 1×104 COPs / cm 3，厚度≥5μm的无BMD层。 这样的晶片可以通过热处理硅晶片，放置在基板保持器上，根据晶片掺杂使用的特定的基板保持器来制造。 对于每个保持器，选择最大加热速率以避免形成滑动。

公开(公告)号：US20060213424A1

公开(公告)日：2006-09-28

申请号：US11386855

申请日：2006-03-22

申请人： Timo Mueller ,  Wilfried von Ammon ,  Erich Daub ,  Peter Krottenthaler ,  Klaus Messmann ,  Friedrich Passek ,  Reinhold Wahlich ,  Arnold Kuehhorn ,  Johannes Studener

发明人： Timo Mueller ,  Wilfried von Ammon ,  Erich Daub ,  Peter Krottenthaler ,  Klaus Messmann ,  Friedrich Passek ,  Reinhold Wahlich ,  Arnold Kuehhorn ,  Johannes Studener

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B31/14 ,  C30B25/12 ,  C30B29/06 ,  C30B33/02 ,  Y10T117/1052 ,  Y10T117/1068

摘要： A silicon wafer having no epitaxially deposited layer or layer produced by joining to the silicon wafer, with a nitrogen concentration of 1·1013-8·1014 atoms/cm3, an oxygen concentration of 5.2·1017-7.5·1017 atoms/cm3, a central thickness BMD density of 3·108-2·1010 cm−3, a cumulative length of linear slippages ≦3 cm and a cumulative area of areal slippage regions ≦7 cm2, the front surface having 0.13 μm LSE in the DNN channel, a layer at least 5 μm thick, in which ≦1·104 COPs/cm3 with a size of ≧0.09 μm occur, and a BMD-free layer ≧5 μm thick. Such wafers may be produced by heat treating the silicon wafer, resting on a substrate holder, a specific substrate holder used depending on the wafer doping. For each holder, maximum heating rates are selected to avoid formation of slippages.

摘要翻译： 不具有通过与硅晶片接合而产生的外延沉积层或层的硅晶片，氮浓度为1.10×13×10 4原子/ cm 3， / SUP>，氧浓度为5.2.10±17.5×10 17原子/ cm 3，中心厚度BMD密度为3.10 直线滑移的累积长度<= 3cm，面积滑移区域的累积面积<= 7 在DNN通道中，前表面具有≥0.33μmLSE的氮诱发缺陷，至少5μm厚的层，其中<= 1.10×4 大于>0.09μm的COPs / cm 3> 3，并且不含BMD的层>5μm厚。 这样的晶片可以通过热处理硅晶片，放置在基板保持器上，根据晶片掺杂使用的特定的基板保持器来制造。 对于每个保持器，选择最大加热速率以避免形成滑动。

公开(公告)号：US06843848B2

公开(公告)日：2005-01-18

申请号：US09813240

申请日：2001-03-20

申请人： Wilfried Von Ammon ,  Rüdiger Schmolke ,  Erich Daub ,  Christoph Frey

发明人： Wilfried Von Ammon ,  Rüdiger Schmolke ,  Erich Daub ,  Christoph Frey

IPC分类号： C30B29/06 ,  C30B15/00 ,  H01L21/208 ,  H01L21/26 ,  H01L21/324

CPC分类号： C30B15/00 ,  C30B15/206 ,  C30B29/06

摘要： A semiconductor wafer made from silicon which is doped with hydrogen. The hydrogen concentration is less than 5*1016 atcm−3 and greater than 1*1012 atcm−3. A method for producing a semiconductor wafer from silicon includes separating the semiconductor wafer from a silicon single crystal, with the single silicon crystal being pulled from a melt, in the presence of hydrogen, using the Czochralski method. The hydrogen partial pressure during the pulling of the single silicon crystal is less than 3 mbar.

摘要翻译： 由掺杂有氢的硅制成的半导体晶片。 氢浓度小于5×10 16 atcm -3，大于1×10 12 atcm -3。 从硅制造半导体晶片的方法包括：使用Czochralski方法，在氢的存在下，从硅单晶中分离出半导体晶片，使单晶硅从熔体中拉出。 在单晶硅拉伸期间的氢分压小于3毫巴。