Germanium/silicon avalanche photodetector with separate absorption and multiplication regions
    1.
    发明申请
    Germanium/silicon avalanche photodetector with separate absorption and multiplication regions 有权
    锗/硅雪崩光电探测器,具有单独的吸收和乘法区域

    公开(公告)号:US20060289957A1

    公开(公告)日:2006-12-28

    申请号:US11170556

    申请日:2005-06-28

    IPC分类号: H01L31/107

    摘要: A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.

    摘要翻译: 公开了一种基于半导体波导的光接收器。 根据本发明的方面的装置包括吸收区域,其包括靠近第二类型的半导体区域的第一类型的半导体区域。 第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。 倍增区域被定义为接近并与吸收区域分离。 乘法区域包括本征半导体区域,其中存在用于乘以在吸收区域中产生的电子的电场。