公开(公告)号：US20210006044A1

公开(公告)日：2021-01-07

申请号：US17024342

申请日：2020-09-17

申请人： Jin Hong ,  Ranjeet Kumar ,  Meer Nazmus Sakib ,  Haisheng Rong ,  Kimchau Nguyen ,  Mengyuan Huang ,  Aliasghar Eftekhar ,  Christian Malouin ,  Siamak Amiralizadeh Asl ,  Saeed Fathololoumi ,  Ling Liao ,  Yuliya Akulova ,  Olufemi Dosunmu ,  Ansheng Liu

发明人： Jin Hong ,  Ranjeet Kumar ,  Meer Nazmus Sakib ,  Haisheng Rong ,  Kimchau Nguyen ,  Mengyuan Huang ,  Aliasghar Eftekhar ,  Christian Malouin ,  Siamak Amiralizadeh Asl ,  Saeed Fathololoumi ,  Ling Liao ,  Yuliya Akulova ,  Olufemi Dosunmu ,  Ansheng Liu

IPC分类号： H01S5/50 ,  G02B27/28 ,  H01S5/026 ,  H01S5/30

摘要： Embodiments of the present disclosure are directed to a silicon photonics integrated apparatus that includes an input to receive an optical signal, a splitter optically coupled to the input to split the optical signal at a first path and a second path, a polarization beam splitter and rotator (PBSR) optically coupled with the first path or the second path, and a semiconductor optical amplifier (SOA) optically coupled with the first path or the second path and disposed between the splitter and the PBSR. Other embodiments may be described and/or claimed.

公开(公告)号：US20140291682A1

公开(公告)日：2014-10-02

申请号：US14304702

申请日：2014-06-13

申请人： Mengyuan Huang ,  Pengfei Cai ,  Dong Pan ,  Liangbo Wang ,  Su Li ,  Tuo Shi ,  Tzung I Su ,  Wang Chen ,  Ching-yin Hong

发明人： Mengyuan Huang ,  Pengfei Cai ,  Dong Pan ,  Liangbo Wang ,  Su Li ,  Tuo Shi ,  Tzung I Su ,  Wang Chen ,  Ching-yin Hong

IPC分类号： H01L31/0376 ,  H01L31/0216 ,  H01L31/107

CPC分类号： H01L31/1075

摘要： Avalanche photodiodes (APDs) having at least one top stressor layer disposed on a germanium (Ge) absorption layer are described herein. The top stressor layer can increase the tensile strain of the Ge absorption layer, thus extending the absorption of APDs to longer wavelengths beyond 1550 nm. In one embodiment, the top stressor layer has a four-layer structure, including an amorphous silicon (Si) layer disposed on the Ge absorption layer; a first silicon dioxide (SiO2) layer disposed on the amorphous Si layer, a silicon nitride (SiN) layer disposed on the first SiO2 layer, and a second SiO2 layer disposed on the SiN layer. The Ge absorption layer can be further doped by p-type dopants. The doping concentration of p-type dopants is controlled such that a graded doping profile is formed within the Ge absorption layer to decrease the dark currents in APDs.

摘要翻译： 本文描述了具有设置在锗（Ge）吸收层上的至少一个顶部应力层的雪崩光电二极管（APD）。 顶部应力层可以增加Ge吸收层的拉伸应变，从而将APD的吸收扩展到超过1550nm的更长波长。 在一个实施方案中，顶部应力层具有四层结构，包括设置在Ge吸收层上的非晶硅（Si）层; 设置在非晶Si层上的第一二氧化硅（SiO 2）层，设置在第一SiO 2层上的氮化硅（SiN）层和设置在SiN层上的第二SiO 2层。 Ge吸收层可以被p型掺杂剂进一步掺杂。 控制p型掺杂剂的掺杂浓度，使得在Ge吸收层内形成渐变的掺杂分布，以减少APD中的暗电流。

公开(公告)号：US20130292741A1

公开(公告)日：2013-11-07

申请号：US13604911

申请日：2012-09-06

申请人： Mengyuan Huang ,  Pengfei Cai ,  Dong Pan

发明人： Mengyuan Huang ,  Pengfei Cai ,  Dong Pan

IPC分类号： H01L31/028

CPC分类号： H01L31/1075

摘要： Avalanche photodiodes (APDs) having at least one top stressor layer disposed on a germanium (Ge)-containing absorption layer are described herein. The top stressor layer can increase the tensile strain of the Ge-containing absorption layer, thus extending the absorption of APDs to longer wavelengths beyond 1550 nm. In one embodiment, the top stressor layer has a four-layer structure, including an amorphous silicon (Si) layer disposed on the Ge-containing absorption layer; a first silicon dioxide (SiO2) layer disposed on the amorphous Si layer, a silicon nitride (SiN) layer disposed on the first SiO2 layer, and a second SiO2 layer disposed on the SiN layer. The Ge-containing absorption layer can be further doped by p-type dopants. The doping concentration of p-type dopants is controlled such that a graded doping profile is formed within the Ge-containing absorption layer to decrease the dark currents in APDs.

摘要翻译： 本文描述了具有设置在含锗（Ge）的吸收层上的至少一个顶部应力层的雪崩光电二极管（APD）。 顶部应力层可以增加含Ge吸收层的拉伸应变，从而将APD的吸收延伸到超过1550nm的更长波长。 在一个实施例中，顶部应力层具有四层结构，包括设置在含Ge吸收层上的非晶硅（Si）层; 设置在非晶Si层上的第一二氧化硅（SiO 2）层，设置在第一SiO 2层上的氮化硅（SiN）层和设置在SiN层上的第二SiO 2层。 可以通过p型掺杂剂进一步掺杂含Ge吸收层。 控制p型掺杂剂的掺杂浓度，使得在含Ge吸收层内形成渐变掺杂分布，以减少APD中的暗电流。

公开(公告)号：US08704272B2

公开(公告)日：2014-04-22

申请号：US13280649

申请日：2011-10-25

申请人： Mengyuan Huang ,  Pengfei Cai ,  Dong Pan

发明人： Mengyuan Huang ,  Pengfei Cai ,  Dong Pan

IPC分类号： H01L31/107

CPC分类号： H01L31/1075

摘要： Avalanche photodiodes having special lateral doping concentration that reduces dark current without causing any loss of optical signals and method for the fabrication thereof are described. In one aspect, an avalanche photodiode comprises: a substrate, a first contact layer coupled to at least one metal contract of a first electrical polarity, an absorption layer, a doped electric control layer having a central region and a circumferential region surrounding the central region, a multiplication layer having a partially doped central region, and a second contract layer coupled to at least one metal contract of a second electrical polarity. Doping concentration in the central section is lower than that of the circumferential region. The absorption layer can be formed by selective epitaxial growth.

摘要翻译： 描述了具有特殊的横向掺杂浓度的雪崩光电二极管，其减少暗电流而不引起光信号的任何损失及其制造方法。 在一个方面，雪崩光电二极管包括：衬底，耦合到第一电极性的至少一个金属收缩的第一接触层，吸收层，具有中心区域的掺杂电控制层和围绕中心区域的周边区域 ，具有部分掺杂的中心区域的乘法层和耦合到第二电极性的至少一个金属合金的第二收缩层。 中心部分的掺杂浓度低于圆周区域的浓度。 吸收层可以通过选择性外延生长形成。

公开(公告)号：US20120326259A1

公开(公告)日：2012-12-27

申请号：US13280649

申请日：2011-10-25

申请人： Mengyuan Huang ,  Pengfei Cai ,  Dong Pan

发明人： Mengyuan Huang ,  Pengfei Cai ,  Dong Pan

IPC分类号： H01L31/107 ,  H01L31/18

CPC分类号： H01L31/1075

摘要： Avalanche photodiodes having special lateral doping concentration that reduces dark current without causing any loss of optical signals and method for the fabrication thereof are described. In one aspect, an avalanche photodiode comprises: a substrate, a first contact layer coupled to at least one metal contract of a first electrical polarity, an absorption layer, a doped electric control layer having a central region and a circumferential region surrounding the central region, a multiplication layer having a partially doped central region, and a second contract layer coupled to at least one metal contract of a second electrical polarity. Doping concentration in the central section is lower than that of the circumferential region. The absorption layer can be formed by selective epitaxial growth.

摘要翻译： 描述了具有特殊的横向掺杂浓度的雪崩光电二极管，其减少暗电流而不引起光信号的任何损失及其制造方法。 在一个方面，雪崩光电二极管包括：衬底，耦合到第一电极性的至少一个金属收缩的第一接触层，吸收层，具有中心区域的掺杂电控制层和围绕中心区域的周边区域 ，具有部分掺杂的中心区域的乘法层和耦合到第二电极性的至少一个金属合金的第二收缩层。 中心部分的掺杂浓度低于圆周区域的浓度。 吸收层可以通过选择性外延生长形成。

公开(公告)号：US09780248B2

公开(公告)日：2017-10-03

申请号：US14304702

申请日：2014-06-13

申请人： Mengyuan Huang ,  Pengfei Cai ,  Dong Pan ,  Liangbo Wang ,  Su Li ,  Tuo Shi ,  Tzung I Su ,  Wang Chen ,  Ching-yin Hong

发明人： Mengyuan Huang ,  Pengfei Cai ,  Dong Pan ,  Liangbo Wang ,  Su Li ,  Tuo Shi ,  Tzung I Su ,  Wang Chen ,  Ching-yin Hong

IPC分类号： H01L31/107

CPC分类号： H01L31/1075

摘要： Avalanche photodiodes (APDs) having at least one top stressor layer disposed on a germanium (Ge) absorption layer are described herein. The top stressor layer can increase the tensile strain of the Ge absorption layer, thus extending the absorption of APDs to longer wavelengths beyond 1550 nm. In one embodiment, the top stressor layer has a four-layer structure, including an amorphous silicon (Si) layer disposed on the Ge absorption layer; a first silicon dioxide (SiO2) layer disposed on the amorphous Si layer, a silicon nitride (SiN) layer disposed on the first SiO2 layer, and a second SiO2 layer disposed on the SiN layer. The Ge absorption layer can be further doped by p-type dopants. The doping concentration of p-type dopants is controlled such that a graded doping profile is formed within the Ge absorption layer to decrease the dark currents in APDs.

公开(公告)号：US08786043B2

公开(公告)日：2014-07-22

申请号：US13604911

申请日：2012-09-06

申请人： Mengyuan Huang ,  Pengfei Cai ,  Dong Pan

发明人： Mengyuan Huang ,  Pengfei Cai ,  Dong Pan

IPC分类号： H01L31/107

CPC分类号： H01L31/1075

摘要： Avalanche photodiodes (APDs) having at least one top stressor layer disposed on a germanium (Ge)-containing absorption layer are described herein. The top stressor layer can increase the tensile strain of the Ge-containing absorption layer, thus extending the absorption of APDs to longer wavelengths beyond 1550 nm. In one embodiment, the top stressor layer has a four-layer structure, including an amorphous silicon (Si) layer disposed on the Ge-containing absorption layer; a first silicon dioxide (SiO2) layer disposed on the amorphous Si layer, a silicon nitride (SiN) layer disposed on the first SiO2 layer, and a second SiO2 layer disposed on the SiN layer. The Ge-containing absorption layer can be further doped by p-type dopants. The doping concentration of p-type dopants is controlled such that a graded doping profile is formed within the Ge-containing absorption layer to decrease the dark currents in APDs.

摘要翻译： 本文描述了具有设置在含锗（Ge）的吸收层上的至少一个顶部应力层的雪崩光电二极管（APD）。 顶部应力层可以增加含Ge吸收层的拉伸应变，从而将APD的吸收延伸到超过1550nm的更长波长。 在一个实施例中，顶部应力层具有四层结构，包括设置在含Ge吸收层上的非晶硅（Si）层; 设置在非晶Si层上的第一二氧化硅（SiO 2）层，设置在第一SiO 2层上的氮化硅（SiN）层和设置在SiN层上的第二SiO 2层。 可以通过p型掺杂剂进一步掺杂含Ge吸收层。 控制p型掺杂剂的掺杂浓度，使得在含Ge吸收层内形成渐变掺杂分布，以减少APD中的暗电流。