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    Commutator integrated armature of electric rotary machine
    1.
    发明授权
    Commutator integrated armature of electric rotary machine 失效
    换向器电动旋转机组合电枢

    公开(公告)号：US06806613B2

    公开(公告)日：2004-10-19

    申请号：US09803979

    申请日：2001-03-13

    Applicant: Jiro Ebihara ,  Kenichi Shibayama ,  Masami Niimi ,  Osamu Ina

    Inventor： Jiro Ebihara ,  Kenichi Shibayama ,  Masami Niimi ,  Osamu Ina

    IPC: H02K348

    CPC classification number: H02K3/12 ,  H02K3/487 ,  H02K13/08

    Abstract: A commutator-integrated armature of a rotary electric machine is comprised of a rotary shaft, an armature core composed of a plurality of laminated sheets, an armature coil composed of a plurality of conductor segments. The conductor segments have in-slot portions respectively inserted into a plurality of slots of the armature core and end portions forming a flat commutator. The armature core has an anchoring portion for anchoring a part of each of the in-slot portions to the armature core more strongly than the rest thereof. The surface of the flat commutator is maintained flat even if the conductor segments repeat thermal expansion and contraction.

    Abstract translation: 旋转电机的换向器集成电枢包括旋转轴，由多个层压片构成的电枢铁心，由多个导体段组成的电枢线圈。 导体段具有分别插入到电枢铁芯的多个槽和形成平整换向器的端部的槽内部分。 电枢铁心具有用于将每个槽内部分的一部分锚定到电枢铁芯的锚定部分，比其余部分更牢固。 即使导体段重复热膨胀和收缩，平面换向器的表面也保持平坦。

    Intake pipe pressure detecting device
    2.
    发明授权
    Intake pipe pressure detecting device 失效
    进气管压力检测装置

    公开(公告)号：US4969354A

    公开(公告)日：1990-11-13

    申请号：US376282

    申请日：1989-07-06

    Applicant: Toru Kosuda ,  Yasuyuki Kawabe ,  Iwao Yokomori ,  Osamu Ina

    Inventor： Toru Kosuda ,  Yasuyuki Kawabe ,  Iwao Yokomori ,  Osamu Ina

    IPC: G01L23/24

    CPC classification number: G01L23/24

    Abstract: Disclosed in an intake pipe pressure detecting device for detecting the pressure in that section of an intake pipe in an internal combustion engine which is on the downstream side of a throttle valve provided in the intake manifold. The pressure detecting device comprises a mixing chamber which has an opening in the wall of the intake pipe, a pressure introducing path which opens onto this mixing chamber, and air inlets adapted to allow fresh air to enter the mixing chamber, thereby generating an air flow directed from the mixing chamber to the intake pipe.

    Abstract translation: 公开在用于检测在设置在进气歧管中的节流阀的下游侧的内燃机中的进气管的该部分中的压力的​​进气管压力检测装置中。 压力检测装置包括：混合室，其在进气管的壁中具有开口;通向该混合室的压力引入路径;以及适于允许新鲜空气进入混合室的空气入口，从而产生气流 从混合室引导到进气管。

    Semiconductor pressure transducer
    3.
    发明授权
    Semiconductor pressure transducer 失效
    半导体压力传感器

    公开(公告)号：US4843454A

    公开(公告)日：1989-06-27

    申请号：US934847

    申请日：1986-11-25

    Applicant: Yukihiro Kato ,  Hiroshi Okada ,  Yoshifumi Watanabe ,  Osamu Ina ,  Osamu Ito ,  Iwao Yokomori

    Inventor： Yukihiro Kato ,  Hiroshi Okada ,  Yoshifumi Watanabe ,  Osamu Ina ,  Osamu Ito ,  Iwao Yokomori

    IPC: G01L9/00

    CPC classification number: G01L19/0061 ,  G01L19/142

    Abstract: A semiconductor pressure transducer comprises a metal housing having a cylindrical recess to which an inlet passage of a medium to be measured is opened, a glass base being received in the recess and having a large diameter cylindrical portion and a small diameter cylindrical portion integrally connected to the large diameter cylindrical portion, a rubber O-ring interposed between a bottom of the recess and the base, a metal tubular collar disposed in the recess around the base to come into contact with the bottom of the recess, the collar urged by a caulked portion of the housing to press the base, a sensor chip provided on an end of the small diameter cylinder of the base for generating an electric signal in response to pressure of said medium, an annular clearance provided between the collar and the base, and an introducing passage provided in the base for introducing the medium from the inlet passage to the sensor chip.

    Abstract translation: 半导体压力传感器包括具有圆柱形凹部的金属壳体，待测量介质的入口通道打开到其上，玻璃基座被容纳在凹部中，并且具有大直径的圆柱形部分和小直径圆柱形部分，其一体地连接到 大直径的圆筒部分，插入在凹部的底部和基部之间的橡胶O形环，设置在凹部周围的金属管状颈圈以与凹部的底部接触，由铆接部 所述壳体的一部分按压所述基座，设置在所述基座的所述小直径圆筒的端部上的传感器芯片，用于响应于所述介质的压力产生电信号，设置在所述套环和所述基座之间的环形间隙，以及 引导通道，其设置在基座中，用于将介质从入口通道引入传感器芯片。

    Gaseous atmosphere control apparatus for a semiconductor manufacturing system
    4.
    发明授权
    Gaseous atmosphere control apparatus for a semiconductor manufacturing system 失效
    用于半导体制造系统的气体气氛控制装置

    公开(公告)号：US4096822A

    公开(公告)日：1978-06-27

    申请号：US727772

    申请日：1976-09-29

    Applicant: Masao Yamawaki ,  Katsuo Aoki ,  Yoshio Oka ,  Takao Suzuki ,  Osamu Ina ,  Kunihiko Hara

    Inventor： Masao Yamawaki ,  Katsuo Aoki ,  Yoshio Oka ,  Takao Suzuki ,  Osamu Ina ,  Kunihiko Hara

    IPC: H01L21/31 ,  C23C16/44 ,  C23C16/455 ,  C30B31/16 ,  H01L21/22 ,  C23C11/00

    CPC classification number: C30B31/16 ,  C23C16/455 ,  C23C16/45578

    Abstract: A gaseous atmosphere control apparatus for heat-treating semiconductors in a uniform gaseous atmosphere condition is disclosed. The control apparatus is provided with a reaction pipe through which semiconductor wafers are transferred to be heat-treated. A gas distribution pipe is fixed to the inside wall of the reaction pipe for guiding the transfer of the wafers and supplying heat-treating gas in the reaction pipe. The distribution pipe is provided with a plurality of blow-off holes, the diameter thereof being made wider as the pipe extends longitudinally, to thereby control the gaseous atmosphere condition in the reaction pipe to be uniform.

    Abstract translation: 公开了一种用于均匀气氛条件下热处理半导体的气体气氛控制装置。 控制装置设置有反应管，半导体晶片通过该反应管被转印以进行热处理。 气体分配管固定到反应管的内壁，用于引导晶片的转移并在反应管中供应热处理气体。 分配管设置有多个排气孔，其管道纵向延伸时，其直径变宽，从而控制反应管中的气态气体状态均匀。

    Semiconductor pressure sensor
    5.
    发明授权
    Semiconductor pressure sensor 失效
    半导体压力传感器

    公开(公告)号：US4838089A

    公开(公告)日：1989-06-13

    申请号：US46582

    申请日：1987-05-06

    Applicant: Hiroshi Okada ,  Yukihiro Kato ,  Osamu Ina ,  Kazuhisa Ikeda

    Inventor： Hiroshi Okada ,  Yukihiro Kato ,  Osamu Ina ,  Kazuhisa Ikeda

    IPC: G01L9/04 ,  G01L9/00 ,  G01L19/14 ,  H01L29/84

    CPC classification number: G01L19/148 ,  G01L19/0038 ,  G01L19/0084 ,  G01L19/14 ,  G01L19/141 ,  H01L2224/48091 ,  H01L2224/48472 ,  H01L2224/49171 ,  H01L2924/3025

    Abstract: The semiconductor pressure sensor embodying the present invention comprises a housing. A sensor board is located in this housing. A pressure-sensing chip, which is formed of a semiconductor and capable of measuring the pressure of a pressure medium, is mounted on the sensor board. Another semiconductor chip, which operates in cooperation with the pressure-sensing chip, is also mounted on the sensor board. A shielding member is located in the housing. This shielding member encloses the pressure-sensing chip in such a manner that the pressure-sensing chip is isolated from the semiconductor chip, and defines a storage chamber which is airtight from the other regions in the housing and adapted to store the pressure-sensing chip. The interior of the housing, except for the storage chamber, is filled with filler, so as to protect the semiconductor chip.

    Abstract translation: 体现本发明的半导体压力传感器包括壳体。 传感器板位于该壳体中。 由传感器板安装由半导体形成并能够测量压力介质的压力的压力感测芯片。 与传感芯片配合工作的另一半导体芯片也安装在传感器板上。 屏蔽构件位于壳体中。 该屏蔽构件以这样的方式包围压力感测芯片，使得压力感测芯片与半导体芯片隔离，并且限定了从壳体中的其它区域气密地存储并适于存储压力感测芯片的存储室 。 除了储存室之外，壳体的内部填充有填料，以保护半导体芯片。

    Semiconductor pressure sensor and method of manufacturing same
    7.
    再颁专利
    Semiconductor pressure sensor and method of manufacturing same 失效
    半导体压力传感器及其制造方法

    公开(公告)号：USRE34893E

    公开(公告)日：1995-04-04

    申请号：US35248

    申请日：1993-03-22

    Applicant: Tetsuo Fujii ,  Yoshitaka Gotoh ,  Susumu Kuroyanagi ,  Osamu Ina

    Inventor： Tetsuo Fujii ,  Yoshitaka Gotoh ,  Susumu Kuroyanagi ,  Osamu Ina

    IPC: G01L9/00 ,  H01L27/06 ,  H01L27/092 ,  H01L29/84 ,  H01L29/96

    CPC classification number: H01L27/067 ,  G01L19/147 ,  G01L9/0042 ,  H01L27/092

    Abstract: A semiconductor pressure sensor of this invention is intended to provide a semiconductor pressure sensor having an excellent electrical isolation between the supporting means of the semiconductor pressure sensor and the semiconductor substrate, the semiconductor pressure sensor basically comprising a semiconductor substrate having a first semiconductor region in which at least a semiconductor device is formed, a second semiconductor region and an isolated layer buried between the first and second semiconductor regions, a cavity provided in the second semiconductor region, the opening thereof existing on the main surface of the second semiconductor region and a strain detecting portion consisting of the semiconductor device and provided in the first semiconductor region opposite to the cavity. The semiconductor pressure sensor is featured in that at least one of the outer peripheral side surfaces of the first and the second semiconductor regions is formed inside of the outermost peripheral side surface of the isolation layer.

    Abstract translation: 本发明的半导体压力传感器旨在提供一种半导体压力传感器，其具有在半导体压力传感器的支撑装置和半导体衬底之间具有优异的电绝缘性，半导体压力传感器基本上包括具有第一半导体区域的半导体衬底， 形成至少一个半导体器件，第二半导体区域和埋在第一和第二半导体区域之间的隔离层，设置在第二半导体区域中的空腔，存在于第二半导体区域的主表面上的开口和应变 检测部分由半导体器件组成并设置在与空腔相对的第一半导体区域中。 半导体压力传感器的特征在于，第一半导体区域和第二半导体区域的至少一个外周侧表面形成在隔离层的最外周侧表面的内部。

    Semiconductor pressure sensor and method of manufacturing same
    8.
    发明授权
    Semiconductor pressure sensor and method of manufacturing same 失效
    半导体压力传感器及其制造方法

    公开(公告)号：US5095349A

    公开(公告)日：1992-03-10

    申请号：US363526

    申请日：1989-06-07

    Applicant: Tetsuo Fujii ,  Yoshitaka Gotoh ,  Susumu Kuroyanagi ,  Osamu Ina

    Inventor： Tetsuo Fujii ,  Yoshitaka Gotoh ,  Susumu Kuroyanagi ,  Osamu Ina

    IPC: G01L9/00 ,  H01L27/20

    CPC classification number: G01L19/147 ,  G01L9/0042 ,  G01L9/0054 ,  H01L27/20

    Abstract: A semiconductor pressure sensor of this invention is intended to provide a semiconductor pressure sensor having an excellent electrical isolation between the supporting means of the semiconductor pressure sensor and the semiconductor substrate, the semiconductor pressure sensor basically comprising a semiconductor substrate having a first semiconductor region in which at least a semiconductor device is formed, a second semiconductor region and an isolated layer buried between the first and second semiconductor regions, a cavity provided in the second semiconductor region, the opening thereof existing on the main surface of the second semiconductor region and a strain detecting portion consisting of the semiconductor device and provided in the first semiconductor region opposite to the cavity. The semiconductor pressure sensor is featured in that at least one of the outer peripheral side surfaces of the first and the second semiconductor regions is formed inside of the outermost peripheral side surface of the isolation layer.

    Abstract translation: 本发明的半导体压力传感器旨在提供一种半导体压力传感器，其具有在半导体压力传感器的支撑装置和半导体衬底之间具有优异的电绝缘性，半导体压力传感器基本上包括具有第一半导体区域的半导体衬底， 形成至少一个半导体器件，第二半导体区域和埋在第一和第二半导体区域之间的隔离层，设置在第二半导体区域中的空腔，存在于第二半导体区域的主表面上的开口和应变 检测部分由半导体器件组成并设置在与空腔相对的第一半导体区域中。 半导体压力传感器的特征在于，第一半导体区域和第二半导体区域的至少一个外周侧表面形成在隔离层的最外周侧表面的内部。

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