公开(公告)号：US4123293A

公开(公告)日：1978-10-31

申请号：US663471

申请日：1976-03-03

申请人： Susumu Okikawa ,  Osamu Yukawa ,  Hiroshi Mikino ,  Yoshio Nonaka

发明人： Susumu Okikawa ,  Osamu Yukawa ,  Hiroshi Mikino ,  Yoshio Nonaka

IPC分类号： H01L23/12 ,  B23K35/30 ,  H01L21/48 ,  H01L21/60 ,  H01L23/373 ,  C22F1/08

CPC分类号： H01L24/83 ,  B23K35/3013 ,  H01L21/4871 ,  H01L23/3735 ,  H01L24/29 ,  H01L2224/29101 ,  H01L2224/73265 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2224/83805 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14

摘要： A method of providing a silicon semiconductor pellet with a heat sink and a semiconductor device with such a heat sink. The heat sink to which the pellet is bonded with a eutectic alloy of gold and silicon interposed therebetween consists mainly of copper and contains a small amount of a metal other than copper and has been subjected to an annealing treatment.

摘要翻译： 提供具有散热器的硅半导体芯片和具有这种散热器的半导体器件的方法。 其中沉积有金和硅的共晶合金的沉淀物主要由铜组成，并且含有少量的铜以外的金属并进行了退火处理。