公开(公告)号：US06419149B1

公开(公告)日：2002-07-16

申请号：US09515072

申请日：2000-02-28

申请人： Kentaro Yano ,  Susumu Okikawa ,  Noboru Hanai

发明人： Kentaro Yano ,  Susumu Okikawa ,  Noboru Hanai

IPC分类号： B23K2004

CPC分类号： H01L21/4846 ,  B23K20/02 ,  B23K2103/12 ,  H05K3/20

摘要： A wiring layer transfer composite constituted by a laminate composed of a carrier layer, a barrier layer and a wiring-forming layer, the barrier layer being a continuous layer substantially free from defects, can be produced by (a) preparing a first Cu-based metal foil having an average thickness of 50 &mgr;m or less and an average surface roughness Rz of 5 &mgr;m or less in both surfaces for the carrier layer; (b) preparing a second Cu-based metal foil having an average thickness of 20 &mgr;m or less and an average surface roughness Rz of 5 &mgr;m or less in both surfaces for the wiring-forming layer; (c) vapor-depositing a metal having different etchability from that of Cu onto at least one of the first metal foil and the second metal foil to form the barrier layer having an average thickness of 1 &mgr;m or less; and (b) pressure-welding both metal foils via the barrier layer.

摘要翻译： 由通过载体层，阻挡层和布线形成层构成的层叠体构成的布线层转印复合体可以通过（a）制备基本上不含Cu的第一Cu基 在载体层的两个表面中平均厚度为50μm以下，平均表面粗糙度Rz为5μm以下的金属箔; （b）在布线形成层的两个表面上制备平均厚度为20μm以下且平均表面粗糙度Rz为5μm以下的第2 Cu系金属箔; （c）将具有与Cu的不同蚀刻性的金属气相沉积到第一金属箔和第二金属箔中的至少一个上，以形成平均厚度为1μm或更小的阻挡层; 和（b）经由阻挡层对两个金属箔进行加压焊接。

公开(公告)号：US4976393A

公开(公告)日：1990-12-11

申请号：US134458

申请日：1987-12-17

申请人： Makoto Nakajima ,  Yoshio Ohashi ,  Toshio Chuma ,  Kazuo Hatori ,  Isao Araki ,  Masahiro Koizumi ,  Jin Onuki ,  Hitoshi Suzuki ,  Susumu Okikawa

发明人： Makoto Nakajima ,  Yoshio Ohashi ,  Toshio Chuma ,  Kazuo Hatori ,  Isao Araki ,  Masahiro Koizumi ,  Jin Onuki ,  Hitoshi Suzuki ,  Susumu Okikawa

IPC分类号： B23K20/00 ,  H01L21/00

CPC分类号： H01L24/85 ,  B23K20/007 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/05624 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48799 ,  H01L2224/73265 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/786 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85099 ,  H01L2224/851 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85424 ,  H01L2224/92247 ,  H01L24/45 ,  H01L24/73 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01204 ,  H01L2924/01205 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20753 ,  H01L2924/3025

摘要： The present invention concerns a semiconductor device and a process for producing semiconductor device, as well as a wire bonding device used therefor.In accordance with the present invention, a ball formed at the top end of a bonding wire is sphericalized by electric discharge within a reducing gas atmosphere at a high temperature from 100.degree. C. to 200.degree. C. By using the ball of the bonding wire formed under such a condition to the bonding of the bonding pad of a semiconductor pellet, it is possible to conduct highly reliable ball bonding with excellent bondability and with no development of cracks or the like in the semiconductor pellet, as well as to obtain a highly reliable semiconductor device, that is, LSI or IC.

公开(公告)号：US5844310A

公开(公告)日：1998-12-01

申请号：US694790

申请日：1996-08-09

申请人： Susumu Okikawa ,  Saburou Kitaguchi

发明人： Susumu Okikawa ,  Saburou Kitaguchi

IPC分类号： H01L23/373 ,  H01L23/433 ,  H01L23/495 ,  H01L23/28 ,  H01L23/29

CPC分类号： H01L23/4951 ,  H01L23/3733 ,  H01L23/4334 ,  H01L24/29 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/49109 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/1532 ,  H01L2924/15787 ,  H01L2924/16195 ,  H01L2924/351 ,  Y10T29/4935 ,  Y10T29/49366 ,  Y10T29/49393 ,  Y10T428/12632 ,  Y10T428/12917

摘要： A heat spreader for a semiconductor device is constituted by an integral laminate of alternatingly stacked and diffusion-bonded Fe-Ni alloy sheets and copper-group metal sheets, the laminate having a one-directional stripe pattern of the Fe-Ni alloy sheets and the copper-group metal sheets, which appears on a planar surface on which a silicon chip is disposed. It is produced by (a) alternatingly stacking Fe-Ni alloy sheets and copper-group metal sheets, (b) hot isostatic-pressing the resulting stack of the metal sheets to form a slab, (c) rolling the slab vertically to the laminating direction of the metal sheets to form an integrated stripe-pattern laminate, and (d) cutting the integrated stripe-pattern laminate to a predetermined shape.

摘要翻译： 用于半导体器件的散热器由交替层叠和扩散接合的Fe-Ni合金片和铜族金属片的整体层压体构成，该层压体具有Fe-Ni合金片的单向条纹图案和 铜基金属片，其出现在其上设置硅芯片的平面上。 （a）交替堆叠Fe-Ni合金板和铜族金属片，（b）对所得到的金属板叠层进行热等静压加工，形成板坯，（c）将板坯垂直轧制成层压 方向形成一体的条纹图案层叠体，（d）将一体的条纹图案层叠体切割成规定的形状。

公开(公告)号：US5152450A

公开(公告)日：1992-10-06

申请号：US619504

申请日：1990-11-29

申请人： Susumu Okikawa ,  Michio Tanimoto

发明人： Susumu Okikawa ,  Michio Tanimoto

IPC分类号： B23K20/00 ,  B23K20/24 ,  H01L21/00 ,  H01L21/48 ,  H01L21/607 ,  H01L23/49

CPC分类号： H01L24/85 ,  B23K20/007 ,  B23K20/24 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4556 ,  H01L2224/45565 ,  H01L2224/45686 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/73265 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/786 ,  H01L2224/85045 ,  H01L2224/85075 ,  H01L2224/85099 ,  H01L2224/851 ,  H01L2224/85181 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L24/45 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/20753 ,  H01L2924/20756 ,  H01L2924/30105 ,  H01L2924/3025

摘要： The present invention relates to a wire bonding method and a wire bonding apparatus employing a coated wire in which the surface of the metal wire is coated with an insulator, and a semiconductor device produced by the bonding method. The present invention includes forming a metal ball on the front end of the coated wire, e.g., by arc discharge; joining the metal ball to an external terminal of a semiconductor chip; bringing the rear end of the coated wire into contact with an external lead and destroying the insulator coating where the coated wire contacts the lead; and joining the metal wire at the rear end of the coated wire to the lead. The metal wire is connected to a common ground with the bonding device, during the arc discharge, and the wire is positive relative to the discharge electrode. Moreover, the melting and shrinking insulator of the coated wire is blown away, and insulator globes can be prevented from being formed in the coated wire, so that bonding defects are avoidable.

摘要翻译： 引线接合方法和引线接合装置技术领域本发明涉及引线接合方法和使用其中金属线的表面涂覆有绝缘体的涂覆线的引线接合装置以及通过接合方法制造的半导体器件。 本发明包括例如通过电弧放电在涂覆线的前端形成金属球; 将所述金属球接合到半导体芯片的外部端子; 使涂层线的后端与外部引线接触，并破坏涂覆的电线与引线接触的绝缘体涂层; 并且将涂覆线的后端处的金属线接合到引线。 在电弧放电期间，金属线与接合装置连接到公共地，并且导线相对于放电电极是正的。 此外，被覆线的熔融和收缩的绝缘体被吹走，并且可以防止在涂覆的线中形成绝缘体球，使得可以避免接合缺陷。

公开(公告)号：US5031821A

公开(公告)日：1991-07-16

申请号：US395088

申请日：1989-08-16

申请人： Tsuyoshi Kaneda ,  Susumu Okikawa ,  Hiroshi Mikino ,  Hiroshi Watanabe ,  Toshihiro Satou ,  Atsushi Onodera ,  Michio Tanimoto

发明人： Tsuyoshi Kaneda ,  Susumu Okikawa ,  Hiroshi Mikino ,  Hiroshi Watanabe ,  Toshihiro Satou ,  Atsushi Onodera ,  Michio Tanimoto

IPC分类号： B23K20/00 ,  B23K20/10 ,  H01L21/00 ,  H01L23/49 ,  H01L23/495

CPC分类号： H01L24/85 ,  B23K20/007 ,  B23K20/10 ,  H01L23/4952 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/32245 ,  H01L2224/43821 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4556 ,  H01L2224/45565 ,  H01L2224/45669 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48253 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48799 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/786 ,  H01L2224/7865 ,  H01L2224/85045 ,  H01L2224/85075 ,  H01L2224/85098 ,  H01L2224/851 ,  H01L2224/85181 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L24/49 ,  H01L24/73 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01204 ,  H01L2924/01205 ,  H01L2924/01206 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/20752 ,  H01L2924/3025

摘要： The present invention is characterized in that, in a ball wedge bonding using a fine bonding wire precoated with a thin insulating layer, ultrasonic vibration is applied to a capillary to effect the delivery of the wire smoothly during movement of the capillary to a second bonding point while delivering the wire after ball bonding at a first bonding point.

摘要翻译： 本发明的特征在于，在使用预先涂覆有薄绝缘层的细接合线的球楔接合中，将超声波振动施加到毛细管，以在毛细管移动到第二接合点期间平滑地实现线的输送 同时在第一接合点的球接合之后传送线。

公开(公告)号：US4100566A

公开(公告)日：1978-07-11

申请号：US780327

申请日：1977-03-23

申请人： Susumu Okikawa ,  Hiroshi Mikino

发明人： Susumu Okikawa ,  Hiroshi Mikino

IPC分类号： H01L23/31 ,  H01L23/40 ,  H01L23/433 ,  H01L23/48 ,  H01L29/44 ,  H01L29/52

CPC分类号： H01L23/4006 ,  H01L23/3107 ,  H01L23/4334 ,  H01L2023/405 ,  H01L2023/4087 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/3511 ,  Y10T29/49117

摘要： When a resin-sealed type semiconductor device having a heat dissipating plate is mounted on a mounting plate by means of screws or the like, means are provided to prevent occurrence of cracks in the resin sealing portion and semiconductor circuit elements embodied therein. To this end, the resin body, heat dissipating plate or mounting plate is thickened at portions thereof where screw receiving apertures are formed. Alternatively, washer or the like member may be employed.

摘要翻译： 当通过螺钉等将具有散热板的树脂密封型半导体器件安装在安装板上时，设置有用于防止树脂密封部分和其中体现的半导体电路元件发生裂纹的装置。 为此，树脂体，散热板或安装板在形成有螺钉接收孔的部分处变稠。 或者，也可以使用垫圈等。

公开(公告)号：US4998002A

公开(公告)日：1991-03-05

申请号：US149081

申请日：1988-01-26

申请人： Susumu Okikawa ,  Michio Tanimoto

发明人： Susumu Okikawa ,  Michio Tanimoto

IPC分类号： B23K20/00 ,  B23K20/24 ,  H01L21/00 ,  H01L21/48 ,  H01L21/60 ,  H01L21/607 ,  H01L23/49

CPC分类号： H01L24/85 ,  B23K20/007 ,  B23K20/24 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/05599 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4556 ,  H01L2224/45565 ,  H01L2224/45686 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/73265 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/786 ,  H01L2224/85045 ,  H01L2224/85075 ,  H01L2224/85099 ,  H01L2224/851 ,  H01L2224/85181 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L24/45 ,  H01L24/73 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01047 ,  H01L2924/01052 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/20753 ,  H01L2924/20756 ,  H01L2924/30105 ,  H01L2924/3025

摘要： A semiconductor device is fabricated by placing a semiconductor chip with at least one bonding pad on the bonding stage of a wire bonder. A coated wire on a spool is passed through a bore in a bonding capillary so that one end of the wire projects from the lower tip of the capillary. An electrical arc discharge is created between the wire tip projecting from the capillary and a discharge electrode by applying a first electric potential to this wire tip through the opposite end of the wire and applying a second electric potential to the electrode. A ball is formed on the end of the wire and this ball is bonded to the pad with the lower tip of the capillary.

公开(公告)号：US5285949A

公开(公告)日：1994-02-15

申请号：US907034

申请日：1992-07-01

申请人： Susumu Okikawa ,  Michio Tanimoto

发明人： Susumu Okikawa ,  Michio Tanimoto

IPC分类号： B23K20/00 ,  B23K20/24 ,  H01L21/00 ,  H01L21/48 ,  H01L21/607 ,  H01L23/49 ,  B23K31/02

CPC分类号： H01L24/85 ,  B23K20/007 ,  B23K20/24 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4556 ,  H01L2224/45565 ,  H01L2224/45686 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/73265 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/786 ,  H01L2224/85045 ,  H01L2224/85075 ,  H01L2224/85099 ,  H01L2224/851 ,  H01L2224/85181 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L24/73 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/20753 ,  H01L2924/20756 ,  H01L2924/30105 ,  H01L2924/3025

摘要： The present invention relates to a wire bonding method and a wire bonding apparatus employing a coated wire in which the surface of a metal wire is coated with an insulator, and a semiconductor device produced by the bonding method. The present invention includes forming a mixed gas of (1) a combustible gas and (2) a temperature controlling gas for lowering the combustion temperature of the mixture; and removing the insulator coating material from the coated wire at a bonding part of the coated wire, so as to denude the surface of a metal wire, by the use of flames produced by the combustion of the combustible gas of the mixed gas. The removal of the insulator is executed by an insulator removal torch. Also, the present invention includes forming a metal ball on the front end of a coated wire; joining the metal ball to an external terminal of a semiconductor chip; bringing the rear end of the coated wire into contact with an external lead and destroying the insulator coating where the coated wire contacts the lead; and joining the metal wire at the rear end of the coated wire to the lead. According to the above-stated expedients, the combustion flames, which do not impose any damage or breakdown on the metal wire, can be turned around substantially the whole area of the bonding part of the coated wire, so that the insulator of the coated wire can be readily removed to lessen bonding defects. Moreover, the melting and shrinking insulator of the coated wire is blown away, and insulator globes can be prevented from being formed in the coated wire, so that the bonding defects are avoidable.

摘要翻译： 引线接合方法和引线接合装置技术领域本发明涉及引线接合方法和使用其中金属线的表面涂覆有绝缘体的涂覆线的引线接合装置，以及通过接合方法制造的半导体器件。 本发明包括形成（1）可燃气体的混合气体和（2）用于降低混合物的燃烧温度的温度控制气体; 并且通过使用由混合气体的可燃性气体的燃烧产生的火焰，在被覆线的接合部分处从被覆线上除去绝缘体涂层材料，从而使金属线的表面消失。 绝缘体的去除由绝缘体去除焊炬执行。 此外，本发明包括在涂覆线的前端形成金属球; 将所述金属球接合到半导体芯片的外部端子; 使涂层线的后端与外部引线接触，并破坏涂覆的电线与引线接触的绝缘体涂层; 并且将涂覆线的后端处的金属线接合到引线。 根据上述方法，不会在金属丝上施加任何损坏或击穿的燃烧火焰可以绕涂覆线的接合部分的整个区域转动，使得涂覆线的绝缘体 可以容易地除去以减少粘合缺陷。 此外，被覆线的熔融和收缩的绝缘体被吹走，并且可以防止在涂覆的线中形成绝缘体球，使得可以避免接合缺陷。

公开(公告)号：US4564734A

公开(公告)日：1986-01-14

申请号：US476268

申请日：1983-03-17

申请人： Susumu Okikawa

发明人： Susumu Okikawa

IPC分类号： B23K9/16 ,  B23K20/00 ,  H01L21/60 ,  H01L21/603 ,  B23K31/00

CPC分类号： H01L24/85 ,  B23K20/007 ,  H01L24/05 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/73265 ,  H01L2224/78302 ,  H01L2224/85045 ,  H01L2224/85075 ,  H01L2224/851 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L24/45 ,  H01L24/73 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01052 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/181 ,  H01L2924/19042

摘要： A wire bonder useful for assembling electronic components with fine metallic wire. The wire bonder in accordance with this invention forms a ball at a free end of a bonding wire by utilizing discharge arc and thereafter bonds this ball to a component. The wire bonder of the invention has a construction in which the atmosphere between the tip of the bonding wire and a discharge electrode disposed adjacent the tip of the bonding wire can be maintained as a reducing gas atmosphere. Especially when an aluminum wire, which is an easily oxidizable thin metallic wire, is used as the bonding wire, the wire bonder of the present invention improves the sphericity of the ball formed by discharge arc as well as the bondability.

摘要翻译： 一种用于组装电子元件与细金属线的引线接合器。 根据本发明的引线接合器通过利用放电电弧在接合线的自由端处形成球，然后将球接合到部件上。 本发明的引线接合机具有这样一种结构，其中可以保持接合线的尖端和邻近接合线的尖端布置的放电电极之间的气氛作为还原气体气氛。 特别是当使用易于氧化的金属细线的铝线作为接合线时，本发明的引线接合器提高了由放电电弧形成的球的球形度以及可焊接性。

公开(公告)号：US4123293A

公开(公告)日：1978-10-31

申请号：US663471

申请日：1976-03-03

申请人： Susumu Okikawa ,  Osamu Yukawa ,  Hiroshi Mikino ,  Yoshio Nonaka

发明人： Susumu Okikawa ,  Osamu Yukawa ,  Hiroshi Mikino ,  Yoshio Nonaka

IPC分类号： H01L23/12 ,  B23K35/30 ,  H01L21/48 ,  H01L21/60 ,  H01L23/373 ,  C22F1/08

CPC分类号： H01L24/83 ,  B23K35/3013 ,  H01L21/4871 ,  H01L23/3735 ,  H01L24/29 ,  H01L2224/29101 ,  H01L2224/73265 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2224/83805 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14

摘要： A method of providing a silicon semiconductor pellet with a heat sink and a semiconductor device with such a heat sink. The heat sink to which the pellet is bonded with a eutectic alloy of gold and silicon interposed therebetween consists mainly of copper and contains a small amount of a metal other than copper and has been subjected to an annealing treatment.

摘要翻译： 提供具有散热器的硅半导体芯片和具有这种散热器的半导体器件的方法。 其中沉积有金和硅的共晶合金的沉淀物主要由铜组成，并且含有少量的铜以外的金属并进行了退火处理。