公开(公告)号：US4123293A

公开(公告)日：1978-10-31

申请号：US663471

申请日：1976-03-03

申请人： Susumu Okikawa ,  Osamu Yukawa ,  Hiroshi Mikino ,  Yoshio Nonaka

发明人： Susumu Okikawa ,  Osamu Yukawa ,  Hiroshi Mikino ,  Yoshio Nonaka

IPC分类号： H01L23/12 ,  B23K35/30 ,  H01L21/48 ,  H01L21/60 ,  H01L23/373 ,  C22F1/08

CPC分类号： H01L24/83 ,  B23K35/3013 ,  H01L21/4871 ,  H01L23/3735 ,  H01L24/29 ,  H01L2224/29101 ,  H01L2224/73265 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2224/83805 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14

摘要： A method of providing a silicon semiconductor pellet with a heat sink and a semiconductor device with such a heat sink. The heat sink to which the pellet is bonded with a eutectic alloy of gold and silicon interposed therebetween consists mainly of copper and contains a small amount of a metal other than copper and has been subjected to an annealing treatment.

摘要翻译： 提供具有散热器的硅半导体芯片和具有这种散热器的半导体器件的方法。 其中沉积有金和硅的共晶合金的沉淀物主要由铜组成，并且含有少量的铜以外的金属并进行了退火处理。

公开(公告)号：US4845543A

公开(公告)日：1989-07-04

申请号：US67969

申请日：1987-06-29

申请人： Susumu Okikawa ,  Hiroshi Mikino ,  Hiromichi Suzuki ,  Wahei Kitamura ,  Daiji Sakamoto

发明人： Susumu Okikawa ,  Hiroshi Mikino ,  Hiromichi Suzuki ,  Wahei Kitamura ,  Daiji Sakamoto

IPC分类号： B23K20/00 ,  C22C21/00 ,  H01L21/603 ,  H01L23/49

CPC分类号： H01L24/85 ,  B23K20/007 ,  C22C21/00 ,  H01L24/03 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/73265 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/83805 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L24/29 ,  H01L24/73 ,  H01L24/78 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01065 ,  H01L2924/01073 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01205 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15738 ,  H01L2924/1576 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/20753

摘要： A semiconductor device in which a pellet and external leads are connected by bonding wires made of aluminum containing a predetermined amount of at least one additive element, the bonding wires containing 0.05 to 3.0 weight % of at least one element selected from the group consisting of iron and palladium, or containing 0.05-3.0 weight % of at least one first element selected from the group consisting of nickel, iron and palladium and 0.05-3.0 weight % of at least one second element selected from the group consisting of magnesium, manganese and silicon, whereby the corrosion resistance of the wire is increased and the breaking strength of the wire is enhanced. The bonding wires can be connected to the semiconductor pellet by a ball bond, and it is disclosed that using a ball having a Vickers hardness of 30-50 enables good bonding of the bonding wire to, e.g., an aluminum pad on the semiconductor pellet to be achieved. A ball having such hardness can be provided by using specific aluminum alloy compositions and by a quenching of the ball. The bonding wire has the shape and height of its loop controlled by annealing the bonding wire at a specified temperature before bonding or by employing a specified composition for the material of the bonding wire. The loop shape and bondability of the bonding wire, which can be made of aluminum or an aluminum composition containing, e.g., about 1.5 weight % of magnesium, are controlled into the best states.

摘要翻译： 一种半导体器件，其中通过由含有预定量的至少一种添加元素的铝制成的接合线来连接颗粒和外部引线，所述接合线含有0.05至3.0重量％的至少一种选自铁 和钯，或含有0.05-3.0重量％的至少一种选自镍，铁和钯的第一元素和0.05-3.0重量％的至少一种选自镁，锰和硅的第二元素 从而提高了导线的耐腐蚀性，提高了导线的断裂强度。 接合线可以通过球接合连接到半导体芯片，并且公开了使用维氏硬度为30-50的球，能够将接合线与例如半导体芯片上的铝焊盘良好地接合到 实现。 具有这种硬度的球可以通过使用特定的铝合金组合物和球的淬火来提供。 接合线的形状和高度通过在接合之前的特定温度下对接合线进行退火或通过使用用于接合线的材料的特定组成来控制。 可以由铝或含有例如约1.5重量％的镁的铝组合物制成的接合线的环形和接合性被控制在最佳状态。

公开(公告)号：US5031821A

公开(公告)日：1991-07-16

申请号：US395088

申请日：1989-08-16

申请人： Tsuyoshi Kaneda ,  Susumu Okikawa ,  Hiroshi Mikino ,  Hiroshi Watanabe ,  Toshihiro Satou ,  Atsushi Onodera ,  Michio Tanimoto

发明人： Tsuyoshi Kaneda ,  Susumu Okikawa ,  Hiroshi Mikino ,  Hiroshi Watanabe ,  Toshihiro Satou ,  Atsushi Onodera ,  Michio Tanimoto

IPC分类号： B23K20/00 ,  B23K20/10 ,  H01L21/00 ,  H01L23/49 ,  H01L23/495

CPC分类号： H01L24/85 ,  B23K20/007 ,  B23K20/10 ,  H01L23/4952 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/32245 ,  H01L2224/43821 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4556 ,  H01L2224/45565 ,  H01L2224/45669 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48253 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48799 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/786 ,  H01L2224/7865 ,  H01L2224/85045 ,  H01L2224/85075 ,  H01L2224/85098 ,  H01L2224/851 ,  H01L2224/85181 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L24/49 ,  H01L24/73 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01204 ,  H01L2924/01205 ,  H01L2924/01206 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/20752 ,  H01L2924/3025

摘要： The present invention is characterized in that, in a ball wedge bonding using a fine bonding wire precoated with a thin insulating layer, ultrasonic vibration is applied to a capillary to effect the delivery of the wire smoothly during movement of the capillary to a second bonding point while delivering the wire after ball bonding at a first bonding point.

摘要翻译： 本发明的特征在于，在使用预先涂覆有薄绝缘层的细接合线的球楔接合中，将超声波振动施加到毛细管，以在毛细管移动到第二接合点期间平滑地实现线的输送 同时在第一接合点的球接合之后传送线。

公开(公告)号：US4100566A

公开(公告)日：1978-07-11

申请号：US780327

申请日：1977-03-23

申请人： Susumu Okikawa ,  Hiroshi Mikino

发明人： Susumu Okikawa ,  Hiroshi Mikino

IPC分类号： H01L23/31 ,  H01L23/40 ,  H01L23/433 ,  H01L23/48 ,  H01L29/44 ,  H01L29/52

CPC分类号： H01L23/4006 ,  H01L23/3107 ,  H01L23/4334 ,  H01L2023/405 ,  H01L2023/4087 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/3511 ,  Y10T29/49117

摘要： When a resin-sealed type semiconductor device having a heat dissipating plate is mounted on a mounting plate by means of screws or the like, means are provided to prevent occurrence of cracks in the resin sealing portion and semiconductor circuit elements embodied therein. To this end, the resin body, heat dissipating plate or mounting plate is thickened at portions thereof where screw receiving apertures are formed. Alternatively, washer or the like member may be employed.

摘要翻译： 当通过螺钉等将具有散热板的树脂密封型半导体器件安装在安装板上时，设置有用于防止树脂密封部分和其中体现的半导体电路元件发生裂纹的装置。 为此，树脂体，散热板或安装板在形成有螺钉接收孔的部分处变稠。 或者，也可以使用垫圈等。