INTEGRATED OPTICAL MEMORY
    1.
    发明申请
    INTEGRATED OPTICAL MEMORY 有权
    集成光学存储器

    公开(公告)号:US20090052297A1

    公开(公告)日:2009-02-26

    申请号:US12193257

    申请日:2008-08-18

    Abstract: An optical memory includes an array of optical material and a beam scanning device. The optical material assumes first and second states, and incident light causes the optical material to transition from the first state to the second state. The beam scanning device selectively directs a received optical data signal across the array of optical material.

    Abstract translation: 光学存储器包括光学材料阵列和光束扫描装置。 光学材料呈现第一和第二状态,入射光使光学材料从第一状态转变到第二状态。 光束扫描装置选择性地引导接收的光学数据信号跨越光学材料阵列。

    Integrated optical memory
    5.
    发明授权
    Integrated optical memory 有权
    集成光学存储器

    公开(公告)号:US07995878B2

    公开(公告)日:2011-08-09

    申请号:US12193257

    申请日:2008-08-18

    Abstract: An optical memory includes an array of optical material and a beam scanning device. The optical material assumes first and second states, and incident light causes the optical material to transition from the first state to the second state. The beam scanning device selectively directs a received optical data signal across the array of optical material.

    Abstract translation: 光学存储器包括光学材料阵列和光束扫描装置。 光学材料呈现第一和第二状态,入射光使光学材料从第一状态转变到第二状态。 光束扫描装置选择性地引导接收的光学数据信号跨越光学材料阵列。

    Variable semiconductor all-optical buffer using slow light based on electromagnetically induced transparency
    7.
    发明授权
    Variable semiconductor all-optical buffer using slow light based on electromagnetically induced transparency 有权
    基于电磁感应透明度的可变半导体全光缓冲器采用慢光

    公开(公告)号:US06900920B2

    公开(公告)日:2005-05-31

    申请号:US10251917

    申请日:2002-09-20

    Abstract: A variable semiconductor all-optical buffer and method of fabrication is provided where buffering is achieved by slowing down the optical signal using a control light source to vary the dispersion characteristic of the medium based on electromagnetically induced transparency (EIT). Photonic bandgap engineering in conjunction with strained quantum wells (QWs) and quantum dots (QDs) achieves room temperature operation of EIT. Photonic crystals are used to sharpen the spectral linewidths in a quantum well structure due to its density of states and in a quantum-dot structure caused by the inhomogeneity of the dot size, typically observed in state-of-the-art QD materials. The configuration facilitates monolithic integration of an optical buffer with an amplifier and control laser to provide advantages over other material systems as candidates for optical buffers.

    Abstract translation: 提供了可变半导体全光学缓冲器和制造方法,其中通过使用控制光源减慢光信号来实现缓冲,以基于电磁感应透明度(EIT)改变介质的色散特性。 光子带隙工程与应变量子阱(QWs)和量子点(QD)结合实现了EIT的室温运行。 光子晶体用于在量子阱结构中锐化光谱线宽,这是由于其状态密度和量子点结构所引起的,通常在现有技术的QD材料中观察到的点尺寸的不均匀性。 该配置有助于光学缓冲器与放大器和控制激光器的单片集成,以提供优于其他材料系统作为光学缓冲器候选的优点。

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