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    CHEMICAL MODULATION OF ELECTRONIC AND MAGNETIC PROPERTIES OF GRAPHENE
    1.
    发明申请
    CHEMICAL MODULATION OF ELECTRONIC AND MAGNETIC PROPERTIES OF GRAPHENE 审中-公开
    石墨的电子和磁性的化学调制

    公开(公告)号：US20110068290A1

    公开(公告)日：2011-03-24

    申请号：US12994678

    申请日：2009-05-29

    申请人： Robert C. Haddon ,  Mikhail E. Itkis ,  Palanisamy Ramesh ,  Elena Bekyarova ,  Sakhrat Khizroev ,  Jeongmin Hong

    发明人： Robert C. Haddon ,  Mikhail E. Itkis ,  Palanisamy Ramesh ,  Elena Bekyarova ,  Sakhrat Khizroev ,  Jeongmin Hong

    IPC分类号： H01F1/42 ,  C07C63/42 ,  C07C39/225 ,  C07C22/04 ,  C07C15/20 ,  H01B1/12 ,  C07C17/02 ,  C07C45/27 ,  C07C49/603 ,  C01B31/00 ,  C07D303/04 ,  C25B3/00 ,  B82Y30/00 ,  B82Y40/00

    CPC分类号： G01N33/6893 ,  C12Q1/6881 ,  C12Q2600/158 ,  G01N33/5088 ,  G01N2800/085 ,  G01N2800/122 ,  G01N2800/324 ,  G01N2800/347 ,  H01F1/405

    摘要： Compounds, compositions, systems and methods for the chemical and electrochemical modification of the electronic structure of graphene and especially epitaxial graphene (EG) are presented. Beneficially, such systems and methods allow the large-scale fabrication of electronic EG devices. Vigorous oxidative conditions may allow substantially complete removal of the EG carbon atoms and the generation of insulating regions; such processing is equivalent to that which is currently used in the semiconductor industry to lithographically etch or oxidize silicon and thereby define the physical features and electronic structure of the devices. However graphene offers an excellent opportunity for controlled modification of the hybridization of the carbon atoms from sp2 to sp3 states by chemical addition of organic functional groups. We show that such chemistries offer opportunities far beyond those currently employed in the semiconductor industry for control of the local electronic structure of the graphene sheet and do not require the physical removal of areas of graphene or its oxidation, in order to generate the full complement of electronic devices necessary to produce functional electronic circuitry. Selective saturation of the π-bonds opens a band gap in the graphene electronic structure which results in a semiconducting or insulating form of graphene, while allowing the insertion of new functionality with the possibility of 3-D electronic architectures. Beneficially, these techniques allow for large-scale fabrication of electronic EG devices and integrated circuits, as they allow the generation of wires (interconnects), semiconductors (transistors), dielectrics, and insulators.

    摘要翻译： 介绍了石墨烯，特别是外延石墨烯（EG）的电子结构的化学和电化学改性的化合物，组合物，体系和方法。 有利的是，这种系统和方法允许电子EG装置的大规模制造。 强烈的氧化条件可以允许基本上完全除去EG碳原子和产生绝缘区域; 这种处理相当于目前在半导体工业中用于光刻蚀刻或氧化硅的方法，从而限定了器件的物理特征和电子结构。 然而，石墨烯提供了通过化学添加有机官能团来控制改变sp2到sp3状态的碳原子的杂化的极好的机会。 我们表明，这些化学品提供的机会远远超出目前在半导体工业中使用的机会，用于控制石墨烯片的局部电子结构，并且不需要物理去除石墨烯的区域或其氧化，以产生完整的 生产功能电子电路所需的电子设备。 石墨烯电子结构的选择饱和打开了石墨烯电子结构中的带隙，导致石墨烯的半导体或绝缘形式，同时允许以3-D电子架构的可能性插入新功能。 有利的是，这些技术允许电子EG器件和集成电路的大规模制造，因为它们允许生成导线（互连），半导体（晶体管），电介质和绝缘体。