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    Enhanced Silicon-TCO Interface in Thin Film Silicon Solar Cells Using Nickel Nanowires
    3.
    发明申请
    Enhanced Silicon-TCO Interface in Thin Film Silicon Solar Cells Using Nickel Nanowires 审中-公开
    使用镍纳米线的薄膜硅太阳能电池中增强的硅-TCO界面

    公开(公告)号：US20110180133A1

    公开(公告)日：2011-07-28

    申请号：US12766829

    申请日：2010-04-23

    申请人： Steven VERHAVERBEKE ,  Roman GOUK ,  Kurtis LESCHKIES

    发明人： Steven VERHAVERBEKE ,  Roman GOUK ,  Kurtis LESCHKIES

    IPC分类号： H01L31/0224 ,  H01L31/18

    CPC分类号： H01B1/02 ,  B82Y20/00 ,  B82Y25/00 ,  H01B1/08 ,  H01F1/0081 ,  H01F1/405 ,  H01L51/5206

    摘要： This invention provides an optically transparent electrically conductive layer with a desirable combination of low electrical sheet resistance and good optical transparency. The conductive layer comprises a multiplicity of magnetic nanostructures in a plane, aligned into a plurality of roughly parallel continuous conductive pathways, wherein the density of the magnetic nanostructures allows for substantial optical transparency of the conductive layer. The magnetic nanostructures may be nanoparticles, nanowires or compound nanowires. A method of forming the conductive layer on a substrate includes: depositing a multiplicity of magnetic nanostructures on the substrate and applying a magnetic field to form the nanostructures into a plurality of conductive pathways parallel to the surface of the substrate. The conductive layer may be used to provide an enhanced silicon to transparent conductive oxide (TCO) interface in thin film silicon solar cells.

    摘要翻译： 本发明提供了具有低电薄片电阻和良好的光学透明度的理想组合的光学透明导电层。 导电层包括在平面中的多个磁性纳米结构，其排列成多个大致平行的连续导电通路，其中磁性纳米结构的密度允许导电层的实质光学透明度。 磁性纳米结构可以是纳米颗粒，纳米线或复合纳米线。 在衬底上形成导电层的方法包括：在衬底上沉积多个磁性纳米结构并施加磁场以将纳米结构形成平行于衬底表面的多个导电路径。 导电层可以用于在薄膜硅太阳能电池中提供增强的硅到透明导电氧化物（TCO）界面。

    CHEMICAL MODULATION OF ELECTRONIC AND MAGNETIC PROPERTIES OF GRAPHENE
    4.
    发明申请
    CHEMICAL MODULATION OF ELECTRONIC AND MAGNETIC PROPERTIES OF GRAPHENE 审中-公开
    石墨的电子和磁性的化学调制

    公开(公告)号：US20110068290A1

    公开(公告)日：2011-03-24

    申请号：US12994678

    申请日：2009-05-29

    申请人： Robert C. Haddon ,  Mikhail E. Itkis ,  Palanisamy Ramesh ,  Elena Bekyarova ,  Sakhrat Khizroev ,  Jeongmin Hong

    发明人： Robert C. Haddon ,  Mikhail E. Itkis ,  Palanisamy Ramesh ,  Elena Bekyarova ,  Sakhrat Khizroev ,  Jeongmin Hong

    IPC分类号： H01F1/42 ,  C07C63/42 ,  C07C39/225 ,  C07C22/04 ,  C07C15/20 ,  H01B1/12 ,  C07C17/02 ,  C07C45/27 ,  C07C49/603 ,  C01B31/00 ,  C07D303/04 ,  C25B3/00 ,  B82Y30/00 ,  B82Y40/00

    CPC分类号： G01N33/6893 ,  C12Q1/6881 ,  C12Q2600/158 ,  G01N33/5088 ,  G01N2800/085 ,  G01N2800/122 ,  G01N2800/324 ,  G01N2800/347 ,  H01F1/405

    摘要： Compounds, compositions, systems and methods for the chemical and electrochemical modification of the electronic structure of graphene and especially epitaxial graphene (EG) are presented. Beneficially, such systems and methods allow the large-scale fabrication of electronic EG devices. Vigorous oxidative conditions may allow substantially complete removal of the EG carbon atoms and the generation of insulating regions; such processing is equivalent to that which is currently used in the semiconductor industry to lithographically etch or oxidize silicon and thereby define the physical features and electronic structure of the devices. However graphene offers an excellent opportunity for controlled modification of the hybridization of the carbon atoms from sp2 to sp3 states by chemical addition of organic functional groups. We show that such chemistries offer opportunities far beyond those currently employed in the semiconductor industry for control of the local electronic structure of the graphene sheet and do not require the physical removal of areas of graphene or its oxidation, in order to generate the full complement of electronic devices necessary to produce functional electronic circuitry. Selective saturation of the π-bonds opens a band gap in the graphene electronic structure which results in a semiconducting or insulating form of graphene, while allowing the insertion of new functionality with the possibility of 3-D electronic architectures. Beneficially, these techniques allow for large-scale fabrication of electronic EG devices and integrated circuits, as they allow the generation of wires (interconnects), semiconductors (transistors), dielectrics, and insulators.

    摘要翻译： 介绍了石墨烯，特别是外延石墨烯（EG）的电子结构的化学和电化学改性的化合物，组合物，体系和方法。 有利的是，这种系统和方法允许电子EG装置的大规模制造。 强烈的氧化条件可以允许基本上完全除去EG碳原子和产生绝缘区域; 这种处理相当于目前在半导体工业中用于光刻蚀刻或氧化硅的方法，从而限定了器件的物理特征和电子结构。 然而，石墨烯提供了通过化学添加有机官能团来控制改变sp2到sp3状态的碳原子的杂化的极好的机会。 我们表明，这些化学品提供的机会远远超出目前在半导体工业中使用的机会，用于控制石墨烯片的局部电子结构，并且不需要物理去除石墨烯的区域或其氧化，以产生完整的 生产功能电子电路所需的电子设备。 石墨烯电子结构的选择饱和打开了石墨烯电子结构中的带隙，导致石墨烯的半导体或绝缘形式，同时允许以3-D电子架构的可能性插入新功能。 有利的是，这些技术允许电子EG器件和集成电路的大规模制造，因为它们允许生成导线（互连），半导体（晶体管），电介质和绝缘体。

    FERROMAGNETIC SEMICONDUCTOR, METHOD FOR THE PRODUCTION THEREOF, COMPONENTS INCORPORATING THE SAME, AND CORRESPONDING USES OF SAID SEMICONDUCTOR
    5.
    发明申请
    FERROMAGNETIC SEMICONDUCTOR, METHOD FOR THE PRODUCTION THEREOF, COMPONENTS INCORPORATING THE SAME, AND CORRESPONDING USES OF SAID SEMICONDUCTOR 有权
    光学半导体，其生产方法，与其组合的组分以及相关半导体的相应使用

    公开(公告)号：US20090230954A1

    公开(公告)日：2009-09-17

    申请号：US12161995

    申请日：2007-02-01

    申请人： Matthieu Jamet ,  Yves Samson ,  Andre Barski ,  Thibaut Devillers

    发明人： Matthieu Jamet ,  Yves Samson ,  Andre Barski ,  Thibaut Devillers

    IPC分类号： G01R33/02 ,  H01L43/06 ,  H01L21/28

    CPC分类号： H01F10/193 ,  B82Y25/00 ,  B82Y40/00 ,  C30B23/063 ,  C30B29/52 ,  G01R33/09 ,  G01R33/093 ,  H01F1/405 ,  H01F41/30

    摘要： The inventive ferromagnetic semiconductor comprises at least one magnetic element selected from the group consisting of Mn, Fe, Co, Ni and Cr, and has a Curie temperature which is equal to or higher than 350 K, and advantageously 400 K or higher. The semiconductor has a matrix which is depleted in magnetic element(s) and contains a discontinuous phase which is formed from columns, enriched with magnetic elements, and is ferromagnetic up to said Curie temperature, in such a way as to generate a lateral modulation of the composition of the semiconductor in the plane of the thin layer. Also disclosed is a method for the production of the semiconductor, a diode-type electronic component for the injection or collection of spins into or from another semiconductor respectively, or an electronic component which is sensitive to a magnetic field, and uses of the semiconductor relating to such a component.

    摘要翻译： 本发明的铁磁半导体包括选自Mn，Fe，Co，Ni和Cr中的至少一种磁性元素，并且具有等于或高于350K，有利地为400K或更高的居里温度。 该半导体具有一个耗尽磁性元件的矩阵，并且包含由富集磁性元件的列形成的不连续相，并且是铁磁性直到所述居里温度，以产生横向调制 半导体在薄层平面上的组成。 还公开了一种用于制造半导体的方法，用于将自旋注入或收集到另一个半导体中的二极管型电子部件或对磁场敏感的电子部件，以及半导体相关的使用 到这样一个组件。

    SPINTRONIC DEVICES WITH CONSTRAINED SPINTRONIC DOPANT
    7.
    发明申请
    SPINTRONIC DEVICES WITH CONSTRAINED SPINTRONIC DOPANT 审中-公开
    具有受约束的旋转体的旋转装置

    公开(公告)号：US20080012004A1

    公开(公告)日：2008-01-17

    申请号：US11687422

    申请日：2007-03-16

    申请人： Xiangyang Huang ,  Samed Halilov ,  Jean Augustin Yiptong ,  Ilija Dukovski ,  Marek Hytha ,  Robert Mears

    发明人： Xiangyang Huang ,  Samed Halilov ,  Jean Augustin Yiptong ,  Ilija Dukovski ,  Marek Hytha ,  Robert Mears

    IPC分类号： H01L29/06

    CPC分类号： H01F10/193 ,  B82Y25/00 ,  H01F1/402 ,  H01F1/404 ,  H01F1/405 ,  H01F10/325 ,  H01L29/66984

    摘要： A spintronic device may include at least one superlattice and at least one electrical contact coupled thereto, with the at least one superlattice including a plurality of groups of layers. Each group of layers may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion having a crystal lattice, at least one non-semiconductor monolayer constrained within the crystal lattice of adjacent base semiconductor portions, and a spintronic dopant. The spintronic dopant may be constrained within the crystal lattice of the base semiconductor portion by the at least one non-semiconductor monolayer. In some embodiments, the repeating structure of a superlattice may not be needed.

    摘要翻译： 自旋电子装置可以包括至少一个超晶格和与其耦合的至少一个电触点，所述至少一个超晶格包括多组层。 每组层可以包括多个层叠的基底半导体单层，其限定具有晶格的基底半导体部分，约束在相邻的基底半导体部分的晶格内的至少一个非半导体单层，以及自旋电子掺杂剂。 所述自旋电子掺杂剂可以通过所述至少一个非半导体单层约束在所述基底半导体部分的晶格内。 在一些实施例中，可能不需要超晶格的重复结构。

    Ferromagnetic-semiconductor spin polarizer of electrons in nonmagnetic semiconductors
    8.
    发明授权
    Ferromagnetic-semiconductor spin polarizer of electrons in nonmagnetic semiconductors 失效
    非磁性半导体中电子的铁磁半导体自旋偏振器

    公开(公告)号：US07309887B2

    公开(公告)日：2007-12-18

    申请号：US11071535

    申请日：2005-03-04

    申请人： Viatcheslav V. Osipov ,  Yorgos Stylianos

    发明人： Viatcheslav V. Osipov ,  Yorgos Stylianos

    IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

    CPC分类号： H01F10/193 ,  H01F1/401 ,  H01F1/405

    摘要： An efficient spin polarizer in nonmagnetic semiconductors is provided. Previous spin injection devices suffered from very low efficiency (less than 35%) into semiconductors. An efficient spin polarizer is provided which is based on ferromagnetic-semiconductor heterostructures and ensures spin polarization of electrons in nonmagnetic semiconductors close to 100% near the ferromagnetic-semiconductor junctions at wide temperature intervals ranging from very low temperatures to room temperatures even in the case when spin polarization of electrons in the ferromagnetic layer is relatively low.

    摘要翻译： 提供了非磁性半导体中有效的自旋偏振器。 以前的自旋注入装置的半导体效率非常低（小于35％）。 提供了一种有效的自旋偏振器，其基于铁磁半导体异质结构，并确保非磁性半导体中电子的自旋极化在非常低的温度至室温的宽温度范围内在铁磁半导体结附近接近100％，即使在 铁磁层中电子的自旋极化相对较低。

    METHODS OF MAKING SPINTRONIC DEVICES WITH CONSTRAINED SPINTRONIC DOPANT
    9.
    发明申请
    METHODS OF MAKING SPINTRONIC DEVICES WITH CONSTRAINED SPINTRONIC DOPANT 有权
    制造具有约束的旋转体的旋转装置的方法

    公开(公告)号：US20070238274A1

    公开(公告)日：2007-10-11

    申请号：US11687430

    申请日：2007-03-16

    申请人： Xiangyang HUANG ,  Samed HALILOV ,  Jean Chan Sow Fook YIPTONG ,  Ilija DUKOVSKI ,  Marek HYTHA ,  Robert MEARS

    发明人： Xiangyang HUANG ,  Samed HALILOV ,  Jean Chan Sow Fook YIPTONG ,  Ilija DUKOVSKI ,  Marek HYTHA ,  Robert MEARS

    IPC分类号： H01L21/22

    CPC分类号： B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  H01F1/401 ,  H01F1/405 ,  H01F10/3213 ,  H01F10/3268 ,  H01F41/301 ,  H01L29/1054 ,  H01L29/15 ,  H01L29/66984

    摘要： A method is for making a spintronic device and may include forming at least one superlattice and at least one electrical contact coupled thereto, with the at least one superlattice including a plurality of groups of layers. Each group of layers may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion having a crystal lattice, at least one non-semiconductor monolayer constrained within the crystal lattice of adjacent base semiconductor portions, and a spintronic dopant. The spintronic dopant may be constrained within the crystal lattice of the base semiconductor portion by the at least one non-semiconductor monolayer. In some embodiments, the repeating structure of a superlattice may not be needed.

    摘要翻译： 一种制造自旋电子器件的方法可包括形成至少一个超晶格和至少一个耦合到其上的电触点，所述至少一个超晶格包括多组层。 每组层可以包括多个层叠的基底半导体单层，其限定具有晶格的基底半导体部分，约束在相邻的基底半导体部分的晶格内的至少一个非半导体单层，以及自旋电子掺杂剂。 所述自旋电子掺杂剂可以通过所述至少一个非半导体单层约束在所述基底半导体部分的晶格内。 在一些实施例中，可能不需要超晶格的重复结构。