公开(公告)号：US10593546B2

公开(公告)日：2020-03-17

申请号：US15752694

申请日：2016-01-07

申请人： Paragraf Ltd.

发明人： Simon Charles Stewart Thomas

IPC分类号： C30B25/10 ,  H01L21/02 ,  C30B29/02 ,  C30B29/06 ,  C30B25/16 ,  C30B29/60 ,  C23C16/26 ,  C23C16/24 ,  C01B32/186 ,  C23C16/455 ,  C30B25/14 ,  C30B29/40

摘要： A method of producing graphene or other two-dimensional material such as graphene including heating the substrate held within a reaction chamber to a temperature that is within a decomposition range of a precursor, and that allows two-dimensional crystalline material formation from a species released from the decomposed precursor; establishing a steep temperature gradient (preferably >1000° C. per meter) that extends away from the substrate surface towards an inlet for the precursor; and introducing precursor through the relatively cool inlet and across the temperature gradient towards the substrate surface. The steep temperature gradient ensures that the precursor remains substantially cool until it is proximate the substrate surface thus minimizing decomposition or other reaction of the precursor before it is proximate the substrate surface. The separation between the precursor inlet and the substrate is less than 100 mm.

公开(公告)号：US20220399201A1

公开(公告)日：2022-12-15

申请号：US17893802

申请日：2022-08-23

申请人： Paragraf Ltd.

发明人： Simon Charles Stewart THOMAS

IPC分类号： H01L21/02 ,  C30B25/10 ,  C30B29/02 ,  C30B29/06 ,  C30B25/16 ,  C30B29/60 ,  C23C16/26 ,  C23C16/24 ,  C01B32/186 ,  C23C16/455 ,  C30B25/14 ,  C30B29/40

摘要： A method of producing graphene or other two-dimensional material such as graphene including heating the substrate held within a reaction chamber to a temperature that is within a decomposition range of a precursor, and that allows two-dimensional crystalline material formation from a species released from the decomposed precursor; establishing a steep temperature gradient (preferably >1000° C. per meter) that extends away from the substrate surface towards an inlet for the precursor; and introducing precursor through the relatively cool inlet and across the temperature gradient towards the substrate surface. The steep temperature gradient ensures that the precursor remains substantially cool until it is proximate the substrate surface thus minimizing decomposition or other reaction of the precursor before it is proximate the substrate surface. The separation between the precursor inlet and the substrate is less than 100 mm.

公开(公告)号：US11456172B2

公开(公告)日：2022-09-27

申请号：US17494321

申请日：2021-10-05

申请人： Paragraf Ltd.

发明人： Simon Charles Stewart Thomas

IPC分类号： C30B25/10 ,  H01L21/02 ,  C30B29/02 ,  C30B29/06 ,  C30B25/16 ,  C30B29/60 ,  C23C16/26 ,  C23C16/24 ,  C01B32/186 ,  C23C16/455 ,  C30B25/14 ,  C30B29/40

摘要： A method of producing graphene or other two-dimensional material such as graphene including heating the substrate held within a reaction chamber to a temperature that is within a decomposition range of a precursor, and that allows two-dimensional crystalline material formation from a species released from the decomposed precursor; establishing a steep temperature gradient (preferably >1000° C. per meter) that extends away from the substrate surface towards an inlet for the precursor; and introducing precursor through the relatively cool inlet and across the temperature gradient towards the substrate surface. The steep temperature gradient ensures that the precursor remains substantially cool until it is proximate the substrate surface thus minimizing decomposition or other reaction of the precursor before it is proximate the substrate surface. The separation between the precursor inlet and the substrate is less than 100 mm.

公开(公告)号：US20220028683A1

公开(公告)日：2022-01-27

申请号：US17494321

申请日：2021-10-05

申请人： Paragraf Ltd.

发明人： Simon Charles Stewart THOMAS

IPC分类号： H01L21/02 ,  C30B25/10 ,  C30B29/02 ,  C30B29/06 ,  C30B25/16 ,  C30B29/60 ,  C23C16/26 ,  C23C16/24 ,  C01B32/186 ,  C23C16/455 ,  C30B25/14 ,  C30B29/40

摘要： A method of producing graphene or other two-dimensional material such as graphene including heating the substrate held within a reaction chamber to a temperature that is within a decomposition range of a precursor, and that allows two-dimensional crystalline material formation from a species released from the decomposed precursor; establishing a steep temperature gradient (preferably >1000° C. per meter) that extends away from the substrate surface towards an inlet for the precursor; and introducing precursor through the relatively cool inlet and across the temperature gradient towards the substrate surface. The steep temperature gradient ensures that the precursor remains substantially cool until it is proximate the substrate surface thus minimizing decomposition or other reaction of the precursor before it is proximate the substrate surface. The separation between the precursor inlet and the substrate is less than 100 mm.

公开(公告)号：US20180308684A1

公开(公告)日：2018-10-25

申请号：US15752694

申请日：2016-01-07

申请人： Paragraf Ltd.

发明人： Simon Charles Stewart THOMAS

IPC分类号： H01L21/02 ,  C30B25/10 ,  C30B29/02 ,  C30B29/06 ,  C30B29/40 ,  C30B25/14

摘要： A method of producing graphene or other two-dimensional material such as graphene including heating the substrate held within a reaction chamber to a temperature that is within a decomposition range of a precursor, and that allows two-dimensional crystalline material formation from a species released from the decomposed precursor; establishing a steep temperature gradient (preferably >1000° C. per meter) that extends away from the substrate surface towards an inlet for the precursor; and introducing precursor through the relatively cool inlet and across the temperature gradient towards the substrate surface. The steep temperature gradient ensures that the precursor remains substantially cool until it is proximate the substrate surface thus minimizing decomposition or other reaction of the precursor before it is proximate the substrate surface. The separation between the precursor inlet and the substrate is less than 100 mm.

公开(公告)号：US11217447B2

公开(公告)日：2022-01-04

申请号：US16795841

申请日：2020-02-20

申请人： Paragraf Ltd.

发明人： Simon Charles Stewart Thomas

IPC分类号： C30B25/10 ,  H01L21/02 ,  C30B29/02 ,  C30B29/06 ,  C30B25/16 ,  C30B29/60 ,  C23C16/26 ,  C23C16/24 ,  C01B32/186 ,  C23C16/455 ,  C30B25/14 ,  C30B29/40

摘要： A method of producing graphene or other two-dimensional material such as graphene including heating the substrate held within a reaction chamber to a temperature that is within a decomposition range of a precursor, and that allows two-dimensional crystalline material formation from a species released from the decomposed precursor; establishing a steep temperature gradient (preferably >1000° C. per meter) that extends away from the substrate surface towards an inlet for the precursor; and introducing precursor through the relatively cool inlet and across the temperature gradient towards the substrate surface. The steep temperature gradient ensures that the precursor remains substantially cool until it is proximate the substrate surface thus minimizing decomposition or other reaction of the precursor before it is proximate the substrate surface. The separation between the precursor inlet and the substrate is less than 100 mm.