公开(公告)号：US4162514A

公开(公告)日：1979-07-24

申请号：US834263

申请日：1977-09-19

申请人： Patrick De Bruyne ,  Lutz Niemeyer

发明人： Patrick De Bruyne ,  Lutz Niemeyer

IPC分类号： H01L23/04 ,  H01L23/00 ,  H01L23/051 ,  H01L23/16 ,  H01L23/492 ,  H01L23/60 ,  H02H7/20

CPC分类号： H01L23/051 ,  H01L23/16 ,  H01L23/4924 ,  H01L23/60 ,  H01L2924/0002

摘要： An arrangement for semiconductor power components in an installation, in which at least one semiconductor power component is placed between contact pieces and is enclosed in a housing exhibiting an insulator and connecting pieces. The arrangement includes current conductors which promote safety and prevent explosion by absorbing electric arcs formed in the installation. The current conductors are placed laterally adjacent to the contact pieces and annularly surrounding the latter, separated from the interior wall of the insulator by narrow gaps. Additional embodiments of the present invention employ reinforcing elements around the housing, and explosion guards around the housing, thereby further enhancing installation safety.

摘要翻译： 一种在安装中的半导体功率部件的布置，其中至少一个半导体功率部件被放置在接触片之间并被封装在呈现绝缘体和连接件的壳体中。 该装置包括通过吸收安装中形成的电弧来促进安全性并防止爆炸的电流导体。 电流导体横向放置在靠近接触件的位置并环绕其周围，通过狭窄的间隙与绝缘体的内壁隔开。 本发明的另外的实施例在壳体周围采用增强元件，并且在壳体周围防爆，从而进一步增强安装安全性。

公开(公告)号：US4426659A

公开(公告)日：1984-01-17

申请号：US252208

申请日：1981-04-08

申请人： Patrick de Bruyne ,  Andre Jaecklin ,  Dieter Eisele

发明人： Patrick de Bruyne ,  Andre Jaecklin ,  Dieter Eisele

IPC分类号： H01L23/04 ,  H01L23/051 ,  H01L23/16 ,  H01L23/60 ,  H01L23/02

CPC分类号： H01L23/60 ,  H01L23/051 ,  H01L23/16 ,  H01L2924/0002

摘要： A housing for high-power semiconductor components is disclosed. The housing consists of an insulator which forms the lateral boundary of the housing, a high-power semiconductor component which is bounded on either side by intermediate disks formed of tungsten or molybdenum, and outer disks formed of copper. The insulator and outer disks are connected by connecting members which may be coated with a protective layer and which surround a protective ring made of a high temperature material such as a ceramic or temperature resistant plastic. The tungsten or molybdenum intermediate disks have a higher total specific energy absorption capacity than does copper.

摘要翻译： 公开了一种用于大功率半导体部件的壳体。 壳体由形成壳体的侧边界的绝缘体，由钨或钼形成的中间盘在任一侧限定的高功率半导体部件和由铜形成的外部圆盘构成。 绝缘体和外盘通过连接构件连接，连接构件可以涂覆有保护层，并且围绕着由诸如陶瓷或耐温塑料的高温材料制成的保护环。 钨或钼中间盘具有比铜更高的总比能吸收能力。

公开(公告)号：US4207584A

公开(公告)日：1980-06-10

申请号：US7183

申请日：1979-01-29

申请人： Patrick De Bruyne ,  Roland Sittig

发明人： Patrick De Bruyne ,  Roland Sittig

IPC分类号： H02H7/20 ,  H03K17/081 ,  H01L29/74

CPC分类号： H02H7/205 ,  H03K17/08108

摘要： A safety device for protecting a controllable high power semiconductor component having an anode, a cathode, and a control electrode, against excessive voltage rise rates dU/dt and comprising: a semiconductor body having at least four sequential zones of alternating and opposite conductivity type, the second sequential zone being provided with a high concentration region having a higher concentration of conductivity type determining impurities than the rest of the second sequential zone; a first emitter electrode contacting the first of the four sequential zones of the semiconductor body and adapted to be connected to the control electrode of the controllable high power semiconductor component; a second emitter electrode contacting the fourth of the four sequential zones of the semiconductor body and adapted to be connected to the anode of the controllable high power semiconductor component; a gate electrode contacting the high concentration region of the second sequential zone of the semiconductor body; and an ohmic conductor connected between the first emitter electrode and the gate electrode.

摘要翻译： 一种用于保护具有阳极，阴极和控制电极的可控大功率半导体部件的安全装置，以抵抗过高的电压上升速率dU / dt，并且包括：具有至少四个交替和相反导电类型的连续区域的半导体本体， 所述第二顺序区域设置有高浓度区域，所述高浓度区域具有确定杂质的导电类型的浓度高于所述第二顺序区域的其余部分; 与半导体本体的四个连续区域中的第一个接触的第一发射极，并且适于连接到可控大功率半导体部件的控制电极; 接触半导体本体的四个连续区域中的第四个并适于连接到可控大功率半导体部件的阳极的第二发射极; 与半导体本体的第二连续区域的高浓度区域接触的栅电极; 以及连接在第一发射极和栅电极之间的欧姆导体。