Power semiconductor module
    1.
    发明授权
    Power semiconductor module 有权
    功率半导体模块

    公开(公告)号:US06738258B2

    公开(公告)日:2004-05-18

    申请号:US10302824

    申请日:2002-11-25

    IPC分类号: H05K720

    摘要: The power semiconductor module (1) comprises a housing (5), a covering panel (11) and at least two submodules (21, 22). The submodules (21, 22) each comprise at least one semiconductor chip, which has two main electrodes which are electrically conductively connected to main connections (3, 4) of the submodules. The submodules (21, 22) are arranged alongside one another, and one of their two main surfaces is pressed against the covering panel (11) of the module. The submodules are electrically connected in series. The maximun blocking voltage of the module is doubled by connecting the submodules, which are arranged alongside one another, in series. This reduces the length and the costs of the stack for hihg-voltage switch since fewer components are required for the same blocking voltages, in particular fewer modules and cooling elements.

    摘要翻译: 功率半导体模块(1)包括壳体(5),覆盖板(11)和至少两个子模块(21,22)。 子模块(21,22)各自包括至少一个半导体芯片,其具有导电连接到子模块的主连接(3,4)的两个主电极。 子模块(21,22)彼此并排布置,并且其两个主表面中的一个压靠在模块的覆盖板(11)上。 子模块串联电连接。 通过连接彼此并排布置的子模块将模块的最大阻断电压加倍。 这减少了用于高压开关的堆叠的长度和成本,因为对于相同的阻挡电压,特别是较少的模块和冷却元件需要更少的部件。