Polarization-insensitive optical modulators
    1.
    发明授权
    Polarization-insensitive optical modulators 失效
    极化不敏感的光学调制器

    公开(公告)号:US06275321B1

    公开(公告)日:2001-08-14

    申请号:US08510752

    申请日:1995-08-03

    Abstract: The or each strained quantum well layer of a quantum confined Stark effect modulator is provided with a substructure of substructure layers not all having the same lattice constant. The thickness and composition of these substructure layers may be arranged to produce a differential strain that is asymmetric with respect to the mid-plane of the quantum well and so skews the hole wavefunctions for heavy-holes, HH1, and light-holes, LH1, in opposite directions. This enables the choice of composition designed to provide substantial matching of the E1-HH1 and E1-LH1 Stark shifts for one particular polarity of applied field, thereby providing a modulation facility that is substantially polarisation insensitive. Alternatively, the thickness and composition of the layers may be chosen to produce a symmetrical strain profile in which the same effect is provided, but for both polarities of applied field.

    Abstract translation: 量子限制Stark效应调制器的每个应变量子阱层具有不全部具有相同晶格常数的子结构层的子结构。 这些子结构层的厚度和组成可以被布置成产生相对于量子阱的中间面不对称的微分应变,因此使重孔HH1和光孔LH1, 在相反的方向 这使得能够选择被设计为为施加场的一个特定极性提供E1-HH1和E1-LH1斯塔克移位的实质匹配,从而提供基本上极化不敏感的调制设备。 或者,可以选择层的厚度和组成以产生对应的应变分布,其中提供相同的效果,但是对于施加场的两个极性。

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