公开(公告)号：US20180106981A1

公开(公告)日：2018-04-19

申请号：US14865646

申请日：2015-09-25

Applicant: BRYAN M. REID ,  MARK SILVER ,  ROBERT MARTINEZ ,  ALAN DECEW ,  ADAM SHABSHELOWITZ ,  MICHAEL CHRISP

Inventor： BRYAN M. REID ,  MARK SILVER ,  ROBERT MARTINEZ ,  ALAN DECEW ,  ADAM SHABSHELOWITZ ,  MICHAEL CHRISP

IPC: G02B7/183 ,  G02B7/182 ,  G02B17/08

CPC classification number: G02B7/183 ,  B64G1/66 ,  G02B7/1827 ,  G02B17/0808 ,  G02B23/16

Abstract: An imaging system includes a metering structure and a plurality of foldable members disposed around a periphery of the metering structure. Each foldable member in the plurality of foldable members includes an arm comprising a strain deployable composite and a reflector disposed on the arm. The arm in a respective foldable member in the plurality of foldable members is configured to hold the respective foldable member toward the metering structure in a first state and to hold the respective foldable member away from the metering structure in a second state such that the reflector of the respective foldable member forms part of a sparse aperture in the second state.

公开(公告)号：US06931041B2

公开(公告)日：2005-08-16

申请号：US10459717

申请日：2003-06-12

Applicant: Wilfred Booij ,  Mark Silver ,  Graham Michael Berry

Inventor： Wilfred Booij ,  Mark Silver ,  Graham Michael Berry

IPC: H01S5/026 ,  H01S5/062 ,  H01S5/22 ,  H01S3/14

CPC classification number: H01S5/026 ,  H01S5/0265 ,  H01S5/06226 ,  H01S5/22 ,  H01S5/2205

Abstract: An integrated buried heterojunction laser optically coupled to a ridge waveguide electro-absorption (EA) optical modulator having a raised ridge structure is manufactured on a single semiconductor substrate on which a plurality of semiconductor layers are grown, including at least one active layer through which optical radiation is coupled from the laser to the waveguide. Semiconductor layers above the active layer form a laser current conduction region and semiconductor layers adjacent the active layer form a laser current confinement region. The ridge structure is formed from one or more layers also used to form the laser current conduction region. The layers used to form the laser current confinement region do not extend adjacent the ridge structure.

Abstract translation: 在其上生长多个半导体层的单个半导体衬底上制造光学耦合到具有凸脊结构的脊波导电吸收（EA）光调制器的集成掩埋异质结激光器，其包括至少一个有源层，光学 辐射从激光器耦合到波导。 有源层上方的半导体层形成激光电流传导区域，邻近有源层的半导体层形成激光电流限制区域。 脊结构由也用于形成激光电流传导区域的一个或多个层形成。 用于形成激光电流限制区域的层不会邻近脊结构延伸。

公开(公告)号：US20050078724A1

公开(公告)日：2005-04-14

申请号：US10644283

申请日：2003-08-20

Applicant: Benedict Massara ,  Richard Moseley ,  Mark Silver ,  Richard Samuel Plumb

Inventor： Benedict Massara ,  Richard Moseley ,  Mark Silver ,  Richard Samuel Plumb

IPC: H01S5/0625 ,  H01S5/10 ,  H01S5/12 ,  H01S5/22 ,  H01S5/00 ,  H01S3/08

CPC classification number: H01S5/06258 ,  H01S5/1064 ,  H01S5/12 ,  H01S5/2205

Abstract: The present invention relates to solid state distributed feedback (DFB) lasers in which a phase shift is introduced to optical radiation circulating in a laser cavity in order to stabilise the laser into single mode operation. A solid state single mode distributed feedback (DFB) laser (1), comprises a laser waveguide (10), a DFB grating structure (6) optically coupled to the waveguide (10) for stabilising the wavelength of optical radiation (7) in the waveguide (10), one or more current conduction regions (4′, 4″) for guiding an applied electrical current to pump the laser waveguide (10) and at least one current constriction region (40) adjacent the one or more current conduction regions (4′, 4″). The DFB structure (6) extends in the current constriction region (40) and at least one of the current conduction regions (4′, 4″). The current conduction and constriction regions (4′, 4″, 40) are arranged so that an electrical current (34) applied to the current conduction region(s) (4′, 4″) pumps the laser waveguide (10) preferentially in the current conduction regions (4′, 4″) compared with the electrical constriction region (40) and thus varies the effective index of refraction (38) of the laser waveguide (10) in these regions (4′, 4″, 40) in order to stabilise the optical radiation (7) for single mode operation of the laser (1).

Abstract translation: 本发明涉及固态分布反馈（DFB）激光器，其中相移被引入在激光腔中循环的光辐射，以便将激光器稳定到单模操作。 固态单模分布反馈（DFB）激光器（1）包括激光波导（10），光学耦合到波导（10）的DFB光栅结构（6），用于在光波导（10）中稳定光辐射（7）的波长 波导（10），用于引导所施加的电流以泵浦所述激光波导（10）的一个或多个电流传导区域（4'，4“）以及与所述一个或多个电流传导相邻的至少一个电流收缩区域（40） 区域（4'，4“）。 DFB结构（6）在电流收缩区域（40）和至少一个电流传导区域（4'，4“）上延伸。 电流传导和收缩区域（4'，4“，40）布置成使得施加到电流传导区域（4”，4“）的电流（34）泵送激光波导（10） 优选地在与电收缩区域（40）相比的电流导电区域（4'，4“）中，并且因此在这些区域（4'，4'）中改变激光波导（10）的有效折射率（38） '，40），以便稳定用于激光器（1）的单模操作的光辐射（7）。

公开(公告)号：US06275321B1

公开(公告)日：2001-08-14

申请号：US08510752

申请日：1995-08-03

Applicant: Peter David Greene ,  Mark Silver ,  Alfred Rodney Adams

Inventor： Peter David Greene ,  Mark Silver ,  Alfred Rodney Adams

IPC: G02F103

CPC classification number: B82Y20/00 ,  G02F1/01725 ,  G02F2001/0157 ,  G02F2001/01758 ,  G02F2001/01766 ,  G02F2203/06

Abstract: The or each strained quantum well layer of a quantum confined Stark effect modulator is provided with a substructure of substructure layers not all having the same lattice constant. The thickness and composition of these substructure layers may be arranged to produce a differential strain that is asymmetric with respect to the mid-plane of the quantum well and so skews the hole wavefunctions for heavy-holes, HH1, and light-holes, LH1, in opposite directions. This enables the choice of composition designed to provide substantial matching of the E1-HH1 and E1-LH1 Stark shifts for one particular polarity of applied field, thereby providing a modulation facility that is substantially polarisation insensitive. Alternatively, the thickness and composition of the layers may be chosen to produce a symmetrical strain profile in which the same effect is provided, but for both polarities of applied field.

Abstract translation: 量子限制Stark效应调制器的每个应变量子阱层具有不全部具有相同晶格常数的子结构层的子结构。 这些子结构层的厚度和组成可以被布置成产生相对于量子阱的中间面不对称的微分应变，因此使重孔HH1和光孔LH1， 在相反的方向 这使得能够选择被设计为为施加场的一个特定极性提供E1-HH1和E1-LH1斯塔克移位的实质匹配，从而提供基本上极化不敏感的调制设备。 或者，可以选择层的厚度和组成以产生对应的应变分布，其中提供相同的效果，但是对于施加场的两个极性。

公开(公告)号：US06937632B2

公开(公告)日：2005-08-30

申请号：US10459716

申请日：2003-06-12

Applicant: Graham Michael Berry ,  Wilfred Booij ,  Mark Silver

Inventor： Graham Michael Berry ,  Wilfred Booij ,  Mark Silver

IPC: H01S5/026 ,  H01S5/22 ,  H01S5/00

CPC classification number: H01S5/026 ,  H01S5/0265 ,  H01S5/22 ,  H01S5/2205

Abstract: A buried heterojunction laser optically coupled with a buried waveguide electro-absorption (EA) optical modulator via an active layer is fabricated on a substrate carrying a number of deposited semiconductor layers. The laser component includes a laser current conduction region and an adjacent laser current confinement region. The waveguide component includes a waveguide current confinement region comprising first and second current blocking structures formed from different grown semiconductor layers. An extension of the first current blocking structure is interposed between the second current blocking structure and the waveguide current conduction region. Because each of the components is flanked by current confinement regions of differing structures, the resistive and capacitative properties of the current confinement regions can be selected to optimise the performance of that component for a particular use.

Abstract translation: 通过有源层与埋入波导电吸收（EA）光调制器光耦合的掩埋异质结激光器被制造在承载多个沉积的半导体层的衬底上。 激光器部件包括激光电流传导区域和相邻的激光电流限制区域。 波导部件包括波导电流限制区域，其包括由不同生长的半导体层形成的第一和第二电流阻挡结构。 第一电流阻挡结构的延伸部插入在第二电流阻挡结构和波导电流传导区域之间。 因为每个组件侧面是不同结构的电流限制区域，所以可以选择电流限制区域的电阻和电容性质以优化用于特定用途的该组件的性能。