公开(公告)号：US6046487A

公开(公告)日：2000-04-04

申请号：US989303

申请日：1997-12-12

申请人： John Preston Benedict ,  David Mark Dobuzinsky ,  Philip Lee Flaitz ,  Erwin N. Hammerl ,  Herbert Ho ,  James F. Moseman ,  Herbert Palm ,  Seiko Yoshida ,  Hiroshi Takato

发明人： John Preston Benedict ,  David Mark Dobuzinsky ,  Philip Lee Flaitz ,  Erwin N. Hammerl ,  Herbert Ho ,  James F. Moseman ,  Herbert Palm ,  Seiko Yoshida ,  Hiroshi Takato

IPC分类号： H01L21/76 ,  H01L21/762 ,  H01L27/04

CPC分类号： H01L21/76232 ,  H01L21/762

摘要： Disclosed is an improved process and liner for trench isolation which includes either a single oxynitride layer or a dual oxynitride (or oxide)/nitride layer. Such a process and liner has an improved process window as well as being an effective O.sub.2 diffusion barrier and resistant to hot phosphoric and hydrofluoric acids.

摘要翻译： 公开了用于沟槽隔离的改进的工艺和衬垫，其包括单一氮氧化物层或双氮氧化物（或氧化物）/氮化物层。 这种工艺和衬里具有改进的工艺窗口，并且是有效的O 2扩散阻挡层并且耐热磷酸和氢氟酸。

公开(公告)号：US5763315A

公开(公告)日：1998-06-09

申请号：US790266

申请日：1997-01-28

申请人： John Preston Benedict ,  David Mark Dobuzinsky ,  Philip Lee Flaitz ,  Erwin N. Hammerl ,  Herbert Ho ,  James F. Moseman ,  Herbert Palm ,  Seiko Yoshida ,  Hiroshi Takato

发明人： John Preston Benedict ,  David Mark Dobuzinsky ,  Philip Lee Flaitz ,  Erwin N. Hammerl ,  Herbert Ho ,  James F. Moseman ,  Herbert Palm ,  Seiko Yoshida ,  Hiroshi Takato

IPC分类号： H01L21/76 ,  H01L21/762

CPC分类号： H01L21/76232 ,  H01L21/762

摘要： Disclosed is an improved process and liner for trench isolation which includes either a single oxynitride layer or a dual oxynitride (or oxide)/nitride layer. Such a process and liner has an improved process window as well as being an effective O.sub.2 diffusion barrier and resistant to hot phosphoric and hydrofluoric acids.

公开(公告)号：US06410399B1

公开(公告)日：2002-06-25

申请号：US09606493

申请日：2000-06-29

申请人： Philip Lee Flaitz ,  Herbert L. Ho ,  Subramanian Iyer ,  Babar Khan ,  Paul C. Parries

发明人： Philip Lee Flaitz ,  Herbert L. Ho ,  Subramanian Iyer ,  Babar Khan ,  Paul C. Parries

IPC分类号： H01L2120

CPC分类号： H01L27/10867 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/76895 ,  H01L29/665

摘要： A semiconductor device manufacturing method for silicidizing silicon-containing areas in array regions of dynamic random access memory (DRAMS)and embedded DRAM (eDRAM) devices to lower electrical resistance, and improve device reliability at low temperatures.

摘要翻译： 一种半导体器件制造方法，用于在动态随机存取存储器（DRAMS）和嵌入式DRAM（eDRAM）器件的阵列区域中硅化硅含量区域，以降低电阻，并在低温下提高器件的可靠性。