摘要:
A method and system for verifying performance of an array by simulating operation of edge cells in a full array model reduces the computation time required for complete design verification. The edge cells of the array (or each subarray if the array is partitioned) are subjected to a timing simulation while the center cells of the array are logically disabled, but remain in the circuit model, providing proper loading. Additional cells are specified for simulation if calculations indicate a worst-case condition due to a non-edge cell. Wordline arrivals are observed to determine worst-case rows for selection. For write operations, the difference between the wordline edges and the data edges is used to locate any non-edge “outlier” cells. For read operations, the wordline delays are summed with the bitline delays determined from edge column data to locate any outliers.
摘要:
An apparatus and method is provided that combines both self test and functional features in a single latch circuit, which may be used with an SRAM array and is usefully embodied as an L1-L2 latch. During partial writes from an SRAM array, data bits of unknown state are inhibited from entering the latch circuit, while data for testing is allowed to enter. In one useful embodiment of the invention the latch circuit is used with a mode control that provides mode select signals to operate the latch circuit in one of a plurality of modes, including at least full write and partial write modes. The latch circuit further includes a data hold circuit for selectively receiving and storing data coupled to the latch circuit. A first enabling circuit responsive to the mode select signals enables the hold circuit to receive all the data contained in the array during a full write mode, and further enables the hold circuit to receive only some of the data bits contained in the array during a partial write mode, while preventing other data bits of “X” state from entering the latch circuit. A second enabling circuit enables the data hold circuit to receive data bits from a self test source in place of respective data bits from the SRAM array that are prevented from entering the latch circuit.
摘要:
A method and a system for building static models for transistor circuit design is described. This method includes performing an automatic timing model construction several times on certain problem CCCs, with different, typically incompatible sets of user-selected local information for each call. Each of the sets of local information is considered a mode of operation of the circuit, each generating a timing model for the mode of operation. The resulting set of timing models are placed in parallel in the overall timing graph for the digital design as a whole, which has the effect of making the timing analysis choose the most conservative numbers from across the set of parallel models.