公开(公告)号：US09608532B2

公开(公告)日：2017-03-28

申请号：US14678932

申请日：2015-04-04

申请人： Pitleong Wong ,  Yuancheng Ren ,  Xunwei Zhou

发明人： Pitleong Wong ,  Yuancheng Ren ,  Xunwei Zhou

IPC分类号： H02M3/335 ,  H02M1/38 ,  H02M1/00 ,  H02M3/158

CPC分类号： H02M3/33592 ,  H02M1/38 ,  H02M3/1588 ,  H02M2001/0009 ,  H02M2001/0058 ,  Y02B70/126 ,  Y02B70/1466 ,  Y02B70/1475 ,  Y02B70/1491

摘要： To maximize power efficiency, dead time between “on” times of a synchronous rectifier (“SR”) MOSFET switch and a main switch for CCM operation in particular in isolated and non-isolated self-driven synchronous DC-DC converters needs to be optimized. To accomplish that objective, the latest conduction time t of a body diode of the SR MOSFET following conduction thereof is determined, compared with a selected fixed optimum period T1, and incrementally or decrementally adjusted in a subsequent switching cycle while t is unequal to T1, depending on whether t is shorter or longer than T1, so that t eventually is made substantially equal to T1 in length. This process is to be repeated continuously.